Search Results - "Gösele, Ulrich M"
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Causes and prevention of temperature-dependent bubbles in silicon wafer bonding
Published in Japanese Journal of Applied Physics (01-04-1991)“…Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments…”
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Co-precipitation of carbon and oxygen in silicon : the dominant flux criterion
Published in Japanese Journal of Applied Physics (01-11-1993)Get full text
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A new evaluation method of silicon wafer bonding interfaces and bonding strength by KOH etching
Published in Japanese Journal of Applied Physics (01-04-1992)“…KOH anisotropic etching is used to study the interfaces of bonded silicon wafers. This method has been developed to detect the presence of bubbles or unbonded…”
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Wafer bonding technology for silicon-on-lnsulator applications: A review
Published in Journal of electronic materials (01-07-1992)Get full text
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Wafer Bonding and Layer Splitting for Microsystems
Published in Advanced materials (Weinheim) (01-12-1999)“…In advanced microsystems various types of devices (metal‐oxide semiconductor field‐effect transistors, bipolar transistors, sensors, actuators,…”
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Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si
Published in Solar energy materials and solar cells (15-12-2001)“…Multicrystalline Si for photovoltaic applications is a very inhomogeneous material with localized regions of high dislocation density and large impurity and…”
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Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs
Published in Applied physics letters (06-11-1995)“…A quantitative determination of the contribution of As self-interstitials to the As self-diffusion coefficient in GaAs has been carried out. Values of the As…”
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Wafer bonding technology for silicon-on-insulator applications: a review
Published in Journal of electronic materials (01-07-1992)“…Article abstract not available…”
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