Search Results - "Gösele, Ulrich M"

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  1. 1

    Causes and prevention of temperature-dependent bubbles in silicon wafer bonding by MITANI, K, LEHMANN, V, STENGL, R, FEIJOO, D, GOSELE, U. M, MASSOUD, H. Z

    Published in Japanese Journal of Applied Physics (01-04-1991)
    “…Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments…”
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    A new evaluation method of silicon wafer bonding interfaces and bonding strength by KOH etching by MITANI, K, FEIJOO, D, CHA, G, GÖSELE, U. M

    Published in Japanese Journal of Applied Physics (01-04-1992)
    “…KOH anisotropic etching is used to study the interfaces of bonded silicon wafers. This method has been developed to detect the presence of bubbles or unbonded…”
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    Wafer Bonding and Layer Splitting for Microsystems by Tong, Q.-Y., Gösele, U. M.

    Published in Advanced materials (Weinheim) (01-12-1999)
    “…In advanced microsystems various types of devices (metal‐oxide semiconductor field‐effect transistors, bipolar transistors, sensors, actuators,…”
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    Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si by Joshi, Subhash M, Gösele, Ulrich M, Tan, Teh Y

    Published in Solar energy materials and solar cells (15-12-2001)
    “…Multicrystalline Si for photovoltaic applications is a very inhomogeneous material with localized regions of high dislocation density and large impurity and…”
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  7. 7

    Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs by Uematsu, Masashi, Werner, Peter, Schultz, Matthias, Tan, Teh Y., Gösele, Ulrich M.

    Published in Applied physics letters (06-11-1995)
    “…A quantitative determination of the contribution of As self-interstitials to the As self-diffusion coefficient in GaAs has been carried out. Values of the As…”
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