Search Results - "Fussel, W."

Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress by Füssel, W., Schmidt, M., Angermann, H., Mende, G., Flietner, H.

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Anodic passivation of SiGe by Rappich, J, Füssel, W

“…We have investigated the oxide composition and the electronic behavior of the interface of anodically and thermally oxidized SiGe single crystals and epitaxial…”
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Two types of traps at the Si/SiO2 interface characterized by their cross sections by ALBOHN, J, FÜSSEL, W, NGO DUONG SINH, KLIEFOTH, K, FLIETNER, H, FUHS, W

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Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects by Flietner, H., Füssel, W., Sinh, N.D., Angermann, H.

“…A new contactless method, the modulation CV-technique, is described which allows a very sensitive determination of surface and interface state densities as…”
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Defect generation at silicon surfaces during etching and initial stage of oxidation by Angermann, H., Kliefoth, K., Füssel, W., Flietner, H.

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Effect of oxygen agglomeration in polycrystalline Si (SIPOS) films by LISOVSKYY, I. P, LITOVCHENKO, V. G, GNENYY, B. M, FUSSEL, W, KIV, A. E, SOLOVIEV, V. N, MAXIMOVA, T. I

“…IR transmission spectra of SIPOS structures were measured and were investigated by using an approach of deconvolution of the Si-O stretching band into Gauss…”
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ZnO(CdS)/CIS/Mo solar cells characterized by modulation capacitance voltage measurements by Ngo Duong Sinh, Scheer, R., Kliefoth, K., Fussel, W., Fuhs, W.

“…From modulation capacitance voltage (MCV) measurements we determined a voltage V/sub s/ of several hundred mV at the depletion region in CuInS/sub 2/ under PV…”
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Photoluminescence characterization of non-radiative defect density on silicon surfaces and interfaces at room temperature by TIMOSHENKO, V. Yu, PETRENKO, A. B, DITTRICH, T, FÜSSEL, W, RAPPICH, J

“…Room temperature photoluminescence resulting from radiative interband recombination (1.1 mu m) in c-Si excited by of XeCl or N sub(2) laser pulses is studied…”
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Optimization of the back contact geometry for high efficiency solar cells by Schofthaler, M., Rau, U., Fussel, W., Werner, J.H.

“…Minority carrier lifetime measurements are reported for float zone silicon wafers with well passivated surfaces and different periodic metallization patterns…”
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IR study of short-range and local order in SiO2 and SiOx films by LISOVSKII, I. P, LITOVCHENKO, V. G, LOZINSKII, V. B, FROLOV, S. I, FLIETNER, H, FUSSEL, W, SCHMIDT, E. G

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Two types of traps at the [formula omitted] interface characterized by their cross sections by Albohn, J., Füssel, W., Ngo Duong Sinh, Kliefoth, K., Flietner, H., Fuhs, W.

“…The dispersion behavior of traps at the Si SiO 2 interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of…”
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Defects at the Si/SiO 2 interface: Their nature and behaviour in technological processes and stress by Füssel, W., Schmidt, M., Angermann, H., Mende, G., Flietner, H.

“…The electronic properties of silicon surfaces and interfaces are characterized by charges and gap states whose densities and distributions can be strongly…”
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Voltage and current loss in semiconductor solar cells from MCV and simultaneous IV measurements by Sinh, Ngo Duong, Spieβ, F., Kliefoth, K., Füssel, W.

“…We present a method for determining the voltage and current loss in solar cells using the modulation capacitance voltage measuring technique. Both losses can…”
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Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects by FLIETNER, H, FÜSSEL, W, SINH, N. D, ANGERMANN, H

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