Search Results - "Furitsch, Michael"
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1
Substrate Modes of (Al,In)GaN Semiconductor Laser Diodes on SiC and GaN Substrates
Published in IEEE journal of quantum electronics (01-01-2007)“…In semiconductor laser diodes layers with high refractive index can act as parasitic waveguides and cause severe losses to the optical mode propagating in the…”
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Journal Article -
2
Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes
Published in Physica status solidi. A, Applications and materials science (01-01-2005)“…Height and width of the ridge forming the laser diode waveguide determine threshold current density and lateral mode stability. We measure the optical…”
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Journal Article -
3
Measurement of Gain and Device Performance of a 1050-nm Vertical External Cavity Surface Emitting Laser
Published in IEEE journal of quantum electronics (01-03-2013)“…In this paper, we measure and analyze the pump power and wavelength dependent gain of an optically pumped infrared 1050-nm vertical external-cavity…”
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Journal Article -
4
Analysis of the Pump Wavelength Dependence of a 1060-nm VECSEL
Published in IEEE photonics technology letters (01-03-2012)“…We have developed an optically pumped infrared 1060-nm vertical-external-cavity surface-emitting laser for an application as a frequency doubled green laser in…”
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Journal Article -
5
Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers
Published in IEEE photonics technology letters (15-12-2007)“…The monolithic integration of pump lasers and optically pumped vertical-external-cavity surface-emitting lasers is demonstrated. An innovative contacting…”
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Journal Article -
6
Near-field and far-field dynamics of (Al,In)GaN laser diodes
Published in Applied physics letters (18-04-2005)“…Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a…”
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Journal Article -
7
Tailored 9xx nm laser bars for fiber coupling
Published in 2012 IEEE Photonics Society Summer Topical Meeting Series (01-07-2012)“…Status on low fill factor 9xx nm laser bars will be presented. Conversion efficiency peaks above 66% and slow axis divergence of less than 7° was reached up to…”
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Conference Proceeding -
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Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes
Published in Physica status solidi. A, Applications and materials science (01-01-2005)“…As a contribution to the current intense research efforts on wide band‐gap semiconductor devices which are directed towards the development of commercial blue…”
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Journal Article -
9
Extra bright high power laser bars
Published in 2015 IEEE High Power Diode Lasers and Systems Conference (HPD) (01-10-2015)“…We present improvements of the lateral beam divergence and brightness of gain-guided mini-bars for emission at 976nm at highest brightness levels. The beam…”
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Conference Proceeding Journal Article -
10
Facet degradation of (Al,In)GaN laser diodes
Published in Physica status solidi. A, Applied research (01-09-2004)“…We study the facet degradation behavior of (Al,In)GaN multiple quantum well laser diodes. Water vapor causes a fast degradation due to facet oxidation of the…”
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Journal Article Conference Proceeding -
11
IR lasers optimised for high-temperature operation in frequency-doubled green module for mobile laser projection
Published in 2010 High Power Diode Lasers & Systems Conference (01-11-2010)“…The above presented data of a green laser module regarding output power of 100mW based on an 850nm pump laser, 1060nm VECSEL and intra-cavity second-harmonic…”
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Conference Proceeding -
12
Monolithic integration of pump lasers and a vertical external cavity surface emitting laser (VECSEL)
Published in 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science (01-05-2008)“…Integration of optically-pumped VECSELs with pump lasers is demonstrated using an innovative contacting scheme. Devices for medium-power green conversion…”
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Conference Proceeding