Search Results - "Fullowan, R."

Flexible fabrication of large pixel count piston-tip-tilt mirror arrays for fast spatial light modulators by Pardo, Flavio, Cirelli, R.A., Ferry, E.J., Lai, W.Y.-C., Klemens, F.P., Miner, J.F., Pai, C.S., Bower, J.E., Mansfield, W.M., Kornblit, A., Sorsch, T.W., Taylor, J.A., Baker, M.R., Fullowan, R., Simon, M.E., Aksyuk, V.A., Ryf, R., Dyson, H., Arney, S.

“…We present arrays of electrostatically actuated piston-tip-tilt micromirrors realized using a surface micromachining 3-structural-layer polysilicon process…”
Get full text

Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors by REN, F, FULLOWAN, T. R, LOTHIAN, J, WISK, P. W, ABERNATHY, C. R, KOPF, R. F, EMERSON, A. B, DOWNEY, S. W, PEARTON, S. J

“…GaAs/AlGaAs heterojunction bipolar transitors (HBTs) utilizing highly Be-doped base layers display a rapid degradation of dc current gain and junction ideality…”
Get full text

Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures by REN, F, PEARTON, S. J, HOBSON, W. S, FULLOWAN, T. R, LOTHIAN, J, YANOF, A. W

“…The formation of high-resistivity (>107Ω/⧠) regions in GaAs-AlGaAs heterojunction bipolar transistor (HBT) structures by oxygen and hydrogen ion implantation…”
Get full text

Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation by Frei, M.R, Chiu, T.-Y, Abernathy, C.R, Ren, F, Fullowan, T.R, Lothian, J, Pearton, S.J, Tseng, B, Montgomery, R.K, Smith, P.R

“…The observed initial gain degradation of AlGaAs/GaAs heterojunction bipolar transistors under current stress was investigated. The change in device…”
Get full text

Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application by Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chen, Y.-K., Yang, L.W., Fu, S.T., Brozovich, R.S., Lin, H.H.

“…As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for microwave applications, InGaP/GaAs HBTs with carbon-doped base layers grown by…”
Get full text

High-rate, anisotropic dry etching of InP in HI-based discharges by PEARTON, S. J, CHAKRABARTI, U. K, KATZ, A, REN, F, FULLOWAN, T. R

“…Electron cyclotron resonance HI/H2Ar discharges with additional rf-induced dc biasing of the sample have been used to obtain extremely anisotropic dry etching…”
Get full text

Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowth by Hobson, W.S., Ren, F., Abernathy, C.R., Pearton, S.J., Fullowan, T.R., Lothian, J., Jordan, A.S., Lunardi, L.M.

“…High-quality GaAs-AlGaAs heterojunction bipolar transistors (HBTs) in which the carbon-doped base layers (p=10/sup 10/-10/sup 20/ cm/sup -3/, 400-800 AA thick)…”
Get full text

Dry etching characteristics of III-V semiconductors in microwave BCl3 discharges by PEARTON, S. J, HOBSON, W. S, ABERNATHY, C. R, REN, F, FULLOWAN, T. R, KATZ, A, PERLEY, A. P

Get full text

Improved n-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process by REN, F, FULLOWAN, T. R, CHU, S. N. G, PEARTON, S. J, HOBSON, W. S, EMERSON, A. B

“…We report the use of a Mo barrier layer within Ni/Au-Ge based ohmic contacts to GaAs for eliminating an etch stop reaction that occurs during Cl-based dry…”
Get full text

Evaluation of a 100 kV thermal field emission electron-beam nanolithography system by Tennant, D. M., Fullowan, R., Takemura, H., Isobe, M., Nakagawa, Y.

“…We report on the results of performance evaluation tests of a JEOL model JBX-9300FS electron- beam nanolithography system operating at 100 kV. The system was…”
Get full text

In-based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor by REN, F, PEARTON, S. J, HOBSON, W. S, FULLOWAN, T. R, EMERSON, A. B, SCHLEICH, D. M

“…A reliable p ohmic contact for AlGaAs/GaAs heterojunction bipolar transistor (HBT) using AuBe-In/Ag/Au is presented. Excellent morphology after annealing at…”
Get full text

Ohmic contacts to n-type In0.5Ga0.5P by REN, F, KUO, J. M, PEARTON, S. J, FULLOWAN, T. R, LOTHIAN, J. R

Get full text

Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs by Ren, F., Emerson, A. B., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J.

“…The use of wet-chemical removal of native oxide in a sealed nitrogen ambient prior to deposition of metal on GaAs is shown to be an effective method of…”
Get full text

Dry processed, through‐wafer via holes for GaAs power devices by Pearton, S. J., Ren, F., Katz, A., Lothian, J. R., Fullowan, T. R., Tseng, B.

“…The fabrication of through‐wafer via holes in GaAs substrates by plasma etching and laser drilling is reported. Using a low pressure (15–20 mTorr), low dc bias…”
Get full text

Damage introduction in InP and InGaAs during Ar and H2 plasma exposure by PEARTON, S. J, REN, F, ABERNATHY, C. R, HOBSON, W. S, FULLOWAN, T. R, ESAGUI, R, LOTHIAN, J. R

“…Changes in the sheet resistance of doped epitaxial layers of InP and In0.53Ga0.47As exposed to microwave Ar or H2 discharges were measured as a function of the…”
Get full text

Improvement of ohmic contacts on GaAs with in situ cleaning by REN, F, EMERSON, A. B, PEARTON, S. J, FULLOWAN, T. R, BROWN, J. M

“…An in situ argon ion mill clean step prior to ohmic metal deposition has been demonstrated to improve the uniformity of the contact parameters and reduce the…”
Get full text

AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch by Fullowan, T. R., Pearton, S. J., Kopf, K. F., Smith, P. R.

“…A dry etch fabrication technology for high‐speed AlInAs/InGaAs heterojunction bipolar transistors (HBTs) utilizing low‐damage electron cyclotron resonance…”
Get full text

Fabrication of self‐aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors by Ren, F., Lothian, J. R., Pearton, S. J., Abernathy, C. R., Wisk, P. W., Fullowan, T. R., Tseng, B., Chu, S. N. G., Chen, Y. K., Yang, L. W., Fu, S. T., Brozovich, R. S., Lin, H. H., Henning, C. L., Henry, T.

“…Self‐aligned processing of high efficiency power heterojunction bipolar transistors (HBTs) using implant isolation, selective wet and dry etching for mesa…”
Get full text

Dry etch processing of GaAs/AlGaAs high electron mobility transistor structures by Pearton, S. J., Ren, F., Lothian, J. R., Fullowan, T. R., Kopf, R. F., Chakrabarti, U. K., Hui, S. P., Emerson, A. B., Kostelak, R. L., Pei, S. S.

“…Damage introduction into GaAs/AlGaAs high electron mobility transistor (HEMT) structures during either pattern transfer or gate mesa etching steps has been…”
Get full text

Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing by Ren, F., Fullowan, T. R., Pearton, S. J., Lothian, J. R., Esagui, R., Abernathy, C. R., Hobson, W. S.

“…Dry etching is used for a number of processing steps in the fabrication of small geometry (∼2×5 μm2 emitter dimension), high speed (f T , f max≥50 GHz)…”
Get full text