Search Results - "Fukui, Takashi"

A III–V nanowire channel on silicon for high-performance vertical transistors by Tomioka, Katsuhiro, Yoshimura, Masatoshi, Fukui, Takashi

“…The fabrication of transistors using vertical, six-sided core–multishell indium gallium arsenide nanowires with an all-surrounding gate on a silicon substrate…”
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Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length by Tomioka, Katsuhiro, Fukui, Takashi

“…We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths…”
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Tunnel field-effect transistor using InAs nanowire/Si heterojunction by Tomioka, Katsuhiro, Fukui, Takashi

“…We report on fabrication of tunnel field-effect transistor with III-V nanowire (NW)/Si heterojunction and surrounding-gate structure. The device fabricated by…”
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Control of InAs Nanowire Growth Directions on Si by Tomioka, Katsuhiro, Motohisa, Junichi, Hara, Shinjiroh, Fukui, Takashi

“…We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial…”
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GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si by Tomioka, Katsuhiro, Motohisa, Junichi, Hara, Shinjiroh, Hiruma, Kenji, Fukui, Takashi

“…We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The…”
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Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes by Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

“…Excitonic properties in quantum dot (QD) structure are essential properties for applications in quantum computing, cryptography, and photonics. Top-down…”
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InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor by Tomioka, Katsuhiro, Ishizaka, Fumiya, Motohisa, Junichi, Fukui, Takashi

“…Tunnel field-effect transistors (TFETs) have attracted much attention as building blocks for low-power integrated circuits because they can lower the…”
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Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers by Hua, Bin, Motohisa, Junichi, Kobayashi, Yasunori, Hara, Shinjiroh, Fukui, Takashi

“…Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single…”
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High power Stirling Engine with low temperature difference for education using 3D printers by FUKUI, Takashi

“…Low temperature difference Stirling engine is an excellent teaching material for mechanical design because (1) students can experience all of four dynamics…”
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Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application by Tomioka, Katsuhiro, Izhizaka, Fumiya, Fukui, Takashi

“…III–V compound semiconductor and Ge are promising channel materials for future low-power and high-performance integrated circuits. A heterogeneous integration…”
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Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires by Ikejiri, Keitaro, Kitauchi, Yusuke, Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

“…Indium phosphide (InP) nanowires, which have crystal phase mixing and transition from zinc blende (ZB) to wurtzite (WZ), are grown in intermediate growth…”
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Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array by Ishizaka, Fumiya, Hiraya, Yoshihiro, Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

“…We demonstrated the formation of all-wurtzite (WZ) InP/AlInP core–multishell (CMS) nanowires (NWs) by selective-area growth with the crystal structure transfer…”
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Indium tin oxide and indium phosphide heterojunction nanowire array solar cells by Yoshimura, Masatoshi, Nakai, Eiji, Tomioka, Katsuhiro, Fukui, Takashi

“…Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a…”
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van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene by Hong, Young Joon, Lee, Wi Hyoung, Wu, Yaping, Ruoff, Rodney S, Fukui, Takashi

“…Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van…”
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III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications by Tomioka, K., Tanaka, T., Hara, S., Hiruma, K., Fukui, T.

“…III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and optical devices on Si platforms. We present position-controlled…”
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Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy by Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

“…We report the growth of InP∕InAs∕InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were…”
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Structural Transition in Indium Phosphide Nanowires by Kitauchi, Yusuke, Kobayashi, Yasunori, Tomioka, Katsuhiro, Hara, Shinjiro, Hiruma, Kenji, Fukui, Takashi, Motohisa, Junichi

“…We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of…”
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Bidirectional Growth of Indium Phosphide Nanowires by Ikejiri, Keitaro, Ishizaka, Fumiya, Tomioka, Katsuhiro, Fukui, Takashi

“…We present a bidirectional growth mode of InP nanowires grown by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We studied the effect of the…”
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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy by Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi

“…We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic…”
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Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy by Fukui, Takashi, Yoshimura, Masatoshi, Nakai, Eiji, Tomioka, Katsuhiro

“…We demonstrate position-controlled III–V semiconductor nanowires (NWs) by using selective-area metal–organic vapor phase epitaxy and their application to solar…”
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