Search Results - "Fukidome, H"

Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy by Someya, T., Fukidome, H., Endo, N., Takahashi, K., Yamamoto, S., Matsuda, I.

“…Carrier dynamics through a heterointerface of a Dirac material and a semiconductor was studied by the measurement of the full-range time-resolved core-level…”
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Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion by Hasegawa, M., Tashima, K., Kotsugi, M., Ohkochi, T., Suemitsu, M., Fukidome, H.

“…The intrinsic transport properties, such as carrier mobility and saturation velocity, of graphene are the highest among materials owing to its linear band…”
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Observing hot carrier distribution in an n -type epitaxial graphene on a SiC substrate by Someya, T., Fukidome, H., Ishida, Y., Yoshida, R., Iimori, T., Yukawa, R., Akikubo, K., Yamamoto, Sh, Yamamoto, S., Yamamoto, T., Kanai, T., Funakubo, K., Suemitsu, M., Itatani, J., Komori, F., Shin, S., Matsuda, I.

“…Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission…”
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Precise control of epitaxy of graphene by microfabricating SiC substrate by Fukidome, H., Kawai, Y., Fromm, F., Kotsugi, M., Handa, H., Ide, T., Ohkouchi, T., Miyashita, H., Enta, Y., Kinoshita, T., Seyller, Th, Suemitsu, M.

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In-Situ FTIR Studies of Reactions at the Silicon/Liquid Interface:  Wet Chemical Etching of Ultrathin SiO2 on Si(100) by Queeney, K. T, Fukidome, H, Chaban, E. E, Chabal, Y. J

“…We have developed an experimental setup to facilitate study of the surface reactions of single-crystal silicon with Fourier transform infrared (FTIR)…”
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Coherent nanoscale optical-phonon wave packet in graphene layers by Katayama, I., Sato, K., Koga, S., Takeda, J., Hishita, S., Fukidome, H., Suemitsu, M., Kitajima, M.

“…Coherent large-wave-vector phonons in graphene layers were excited by using a 7.5-fs ultrashort laser, and observed by wavelength-resolved pump-probe transient…”
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In situ vibrational study of SiO2/liquid interfaces by Fukidome, H., Pluchery, O., Queeney, K.T., Caudano, Y., Raghavachari, K., Weldon, M.K., Chaban, E.E., Christman, S.B., Kobayashi, H., Chabal, Y.J.

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Effect of dissolved oxygen on etching process of Si(111) in 2.5% NH3 solution by FUKIDOME, Hirokazu, MATSUMURA, Michio

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A Very Simple Method of Flattening Si(111) Surface at an Atomic Level Using Oxygen-Free Water by Fukidome, Hirokazu, Matsumura, Michio

“…Si(111) surfaces were found to be very easily flattened at an atomic level by immersing the wafers in water, from which dissolved oxygen was removed by the…”
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Evaporation and Thermionic Emission Processes of Pb/W(110) Imaged In Situ by Emission Electron Microscopy by Fukidome, Hirokazu, Yoshimura, Masamichi, Ueda, Kazuyuki

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Temperature-Dependent Contrasts of Lateral p + –n Junctions on H/Si(100) Imaged with Photoemission Electron Microscopy by Fukidome, Hirokazu, Yoshimura, Masamichi, Ueda, Kazuyuki

“…The temperature dependence of contrasts on a H/Si(100) surface with lateral p + – n junctions has been studied for the first time by photoemission electron…”
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In-Situ FTIR Studies of Reactions at the Silicon/Liquid Interface:  Wet Chemical Etching of Ultrathin SiO 2 on Si(100) by Queeney, K. T., Fukidome, H., Chaban, E. E., Chabal, Y. J.

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In situ vibrational study of SiO 2/liquid interfaces by Fukidome, H., Pluchery, O., Queeney, K.T., Caudano, Y., Raghavachari, K., Weldon, M.K., Chaban, E.E., Christman, S.B., Kobayashi, H., Chabal, Y.J.

“…The surface of SiO 2 in contact with a liquid has been studied in situ by Fourier transform infrared spectroscopy, electrochemistry and ab initio quantum…”
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Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution by FUKIDOME, H, MATSUMURA, M

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Ultrafast unbalanced electron distributions in quasicrystalline 30{\deg} twisted bilayer graphene by Suzuki, T, Iimori, T, Ahn, S. J, Zhao, Y, Watanabe, M, Xu, J, Fujisawa, M, Kanai, T, Ishii, N, Itatani, J, Suwa, K, Fukidome, H, Tanaka, S, Ahn, J. R, Okazaki, K, Shin, S, Komori, F, Matsuda, I

“…ACS Nano 2019, 13, 10, 11981-11987 Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle {\Theta} has…”
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Scanning Tunneling Microscopy Study of Water Molecules on Pd(110) at Cryogenic Temperature by Komeda, Tadahiro, Fukidome, Hirokazu, Kim, Yousoo, Kawai, Maki, Sainoo, Yasuyuki, Shigekawa, Hidemi

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Characteristic Configuration of Cis-2-butene Molecule on Pd(110) Determined by Scanning Tunneling Microscopy by Sainoo, Yasuyuki, Kim, Yousoo, Fukidome, Hirokazu, Komeda, Tadahiro, Kawai, Maki, Shigekawa, Hidemi

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In situ vibrational study of SiO2/liquid interfaces by FUKIDOME, H, PLUCHERY, O, QUEENEY, K. T, CAUDANO, Y, RAGHAVACHARI, K, WELDON, M. K, CHABAN, E. E, CHRISTMAN, S. B, KOBAYASHI, H, CHABAL, Y. J

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Epitaxial graphene top-gate FETs on silicon substrates by Hyun-Chul Kang, Karasawa, H., Miyamoto, Yu, Handa, H., Fukidome, H., Suemitsu, T., Suemitsu, M., Otsuji, T.

“…Epitaxial graphene channel top-gate FETs on Si substrates are fabricated and their transistor operation is observed. Although the device characteristics is…”
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Optoelectronic application of multi-layer epitaxial graphene on a Si substrate by Olac-vaw, R., Kang, H.C., Komori, T., Watanabe, T., Karasawa, H., Miyamoto, Y., Handa, H., Fukidome, H., Suemitsu, T., Suemitsu, M., Mitin, V., Otsuji, T.

“…In this work, the epitaxial graphene channel formed on 3C-SiC grown on a Si substrate backgate transistor was designed, fabricated and characterized for…”
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