Search Results - "Fuketa, Hiroshi"

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  1. 1

    Ultra-Low Power Hand Gesture Sensor Using Electrostatic Induction by Fuketa, Hiroshi

    Published in Sensors (Basel, Switzerland) (10-12-2021)
    “…This paper presents an ultra-low power hand gesture sensor using electrostatic induction for mobile devices. Two electrodes, which consist of electret foils…”
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    Journal Article
  2. 2

    Time-Delay-Neural-Network-Based Audio Feature Extractor for Ultra-Low Power Keyword Spotting by Fuketa, Hiroshi

    “…In this brief, we propose an audio feature extractor, based on a time delay neural network (TDNN), for ultra-low power keyword spotting (KWS). Conventionally,…”
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    Journal Article
  3. 3

    Ultralow Power Feature Extractor Using Switched-Capacitor-Based Bandpass Filter, Max Operator, and Neural Network Processor for Keyword Spotting by Fuketa, Hiroshi

    Published in IEEE solid-state circuits letters (2022)
    “…This letter presents an ultralow power keyword spotting (KWS) system using a feature extractor comprising a bandpass filter, a max operator, and a time-delay…”
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    Journal Article
  4. 4

    Multiplication-Free Lookup-Based CNN Accelerator Using Residual Vector Quantization and Its FPGA Implementation by Fuketa, Hiroshi, Katashita, Toshihiro, Hori, Yohei, Hioki, Masakazu

    Published in IEEE access (2024)
    “…In this paper, a table lookup-based computing technique is proposed to perform convolutional neural network (CNN) inference without multiplication, and its…”
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    Journal Article
  5. 5

    Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets by Inaba, Takumi, Chiashi, Yusuke, Ogura, Minoru, Asai, Hidehiro, Fuketa, Hiroshi, Oka, Hiroshi, Iizuka, Shota, Kato, Kimihiko, Shitakata, Shunsuke, Mori, Takahiro

    Published in Applied physics express (01-07-2024)
    “…Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from…”
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    Journal Article
  6. 6

    High-Frequency, Conformable Organic Amplifiers by Reuveny, Amir, Lee, Sunghoon, Yokota, Tomoyuki, Fuketa, Hiroshi, Siket, Christian M., Lee, Sungwon, Sekitani, Tsuyoshi, Sakurai, Takayasu, Bauer, Siegfried, Someya, Takao

    Published in Advanced materials (Weinheim) (01-05-2016)
    “…Large‐bandwidth, low‐operation‐voltage, and uniform organic amplifiers are fabricated on ultrathin foils. By the integration of short‐channel OTFTs and AlOx…”
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    Journal Article
  7. 7

    Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs by Inaba, Takumi, Oka, Hiroshi, Asai, Hidehiro, Fuketa, Hiroshi, Iizuka, Shota, Kato, Kimihiko, Shitakata, Shunsuke, Fukuda, Koichi, Mori, Takahiro

    Published in IEEE access (2024)
    “…This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs)…”
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    Journal Article
  8. 8

    Intermittent Resonant Clocking Enabling Power Reduction at Any Clock Frequency for Near/Sub-Threshold Logic Circuits by Fuketa, Hiroshi, Nomura, Masahiro, Takamiya, Makoto, Sakurai, Takayasu

    Published in IEEE journal of solid-state circuits (01-02-2014)
    “…In order to eliminate the limitation of a narrow frequency range of conventional resonant clocking, intermittent resonant clocking (IRC) is proposed for…”
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    Journal Article
  9. 9

    Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality by Oka, Hiroshi, Inaba, Takumi, Shitakata, Shunsuke, Kato, Kimihiko, Iizuka, Shota, Asai, Hidehiro, Fuketa, Hiroshi, Mori, Takahiro

    Published in IEEE access (2023)
    “…This study investigates the origin of low-frequency (LF) 1/<inline-formula> <tex-math notation="LaTeX">f </tex-math></inline-formula> noise in Si n-channel…”
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    Journal Article
  10. 10

    Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation by Matsukawa, Takashi, Liu, Yongxun, Mori, Takahiro, Morita, Yukinori, Otsuka, Shintaro, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku

    Published in Solid-state electronics (01-06-2017)
    “…•Parasitic resistance and its variability are obstacles for the scaling of FinFETs.•Reducing the fin thickness degrades in parasitic resistance and its…”
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    Journal Article
  11. 11

    Increase of Crosstalk Noise Due to Imbalanced Threshold Voltage Between nMOS and pMOS in Subthreshold Logic Circuits by Fuketa, Hiroshi, Takahashi, Ryo, Takamiya, Makoto, Nomura, Masahiro, Shinohara, Hirofumi, Sakurai, Takayasu

    Published in IEEE journal of solid-state circuits (01-08-2013)
    “…An abnormal increase in crosstalk noise in subthreshold logic circuits is observed for the first time. When the threshold voltages ( V TH) of nMOS and pMOS are…”
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    Journal Article Conference Proceeding
  12. 12

    Lookup Table-Based Computing-in-Memory Macro Approximating Dot Products Without Multiplications for Energy-Efficient CNN Inference by Fuketa, Hiroshi

    “…This paper presents a lookup table-based dot product approximation (LDA) for energy-efficient convolutional neural network (CNN) inference as another…”
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    Journal Article
  13. 13

    Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM by Fuketa, H., Hashimoto, M., Mitsuyama, Y., Onoye, T.

    Published in IEEE transactions on nuclear science (01-08-2011)
    “…In this paper, the soft error rate (SER) induced by neutrons in 65-nm 10T static random access memory (SRAM) is measured over a wide range of supply voltages…”
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    Journal Article
  14. 14

    Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering by Otsuka, Shintaro, Mori, Takahiro, Morita, Yukinori, Uchida, Noriyuki, Liu, Yongxun, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku, Matsukawa, Takashi

    “…We have demonstrated that sub-10nm-thick heteroepitaxial Ge films on Si (001) having smooth surfaces can be obtained by DC magnetron sputtering. Ge films grown…”
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    Journal Article
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    Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory by Fuketa, Hiroshi, O uchi, Shin-ichi, Fukuda, Koichi, Mori, Takahiro, Morita, Yukinori, Masahara, Meishoku, Matsukawa, Takashi

    Published in Japanese Journal of Applied Physics (01-04-2016)
    “…Variations of eight-transistor (8T) tunnel FET (TFET) static random access memory (SRAM) cells at ultra-low supply voltage (VDD) of 0.3 V are discussed. A…”
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    Journal Article
  18. 18

    On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors by Fukuda, Koichi, Mori, Takahiro, Asai, Hidehiro, Hattori, Junichi, Mizubayashi, Wataru, Morita, Yukinori, Fuketa, Hiroshi, Migita, Shinji, Ota, Hiroyuki, Masahara, Meishoku, Endo, Kazuhiko, Matsukawa, Takashi

    Published in Japanese Journal of Applied Physics (01-04-2017)
    “…The drain bias dependence of tunnel field-effect transistors (TFETs) is examined on the basis of the measured characteristics and device simulation to…”
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    Journal Article
  19. 19

    Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering by Otsuka, Shintaro, Mori, Takahiro, Morita, Yukinori, Uchida, Noriyuki, Liu, Yongxun, O uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku, Matsukawa, Takashi

    Published in Japanese Journal of Applied Physics (01-04-2017)
    “…We structurally and electrically characterize sub-10-nm-thick heteroepitaxial Ge films on Si(001), formed by heated sputtering and subsequent rapid thermal…”
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    Journal Article
  20. 20

    Edge Artificial Intelligence Chips for the Cyberphysical Systems Era by Fuketa, Hiroshi, Uchiyama, Kunio

    Published in Computer (Long Beach, Calif.) (01-01-2021)
    “…Artificial intelligence (AI) chips draw much attention for cyberphysical systems since AI chips are promising to realize edge AI computing. We introduce the…”
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    Journal Article