Search Results - "Fuketa, Hiroshi"
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1
Ultra-Low Power Hand Gesture Sensor Using Electrostatic Induction
Published in Sensors (Basel, Switzerland) (10-12-2021)“…This paper presents an ultra-low power hand gesture sensor using electrostatic induction for mobile devices. Two electrodes, which consist of electret foils…”
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2
Time-Delay-Neural-Network-Based Audio Feature Extractor for Ultra-Low Power Keyword Spotting
Published in IEEE transactions on circuits and systems. II, Express briefs (01-02-2022)“…In this brief, we propose an audio feature extractor, based on a time delay neural network (TDNN), for ultra-low power keyword spotting (KWS). Conventionally,…”
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3
Ultralow Power Feature Extractor Using Switched-Capacitor-Based Bandpass Filter, Max Operator, and Neural Network Processor for Keyword Spotting
Published in IEEE solid-state circuits letters (2022)“…This letter presents an ultralow power keyword spotting (KWS) system using a feature extractor comprising a bandpass filter, a max operator, and a time-delay…”
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4
Multiplication-Free Lookup-Based CNN Accelerator Using Residual Vector Quantization and Its FPGA Implementation
Published in IEEE access (2024)“…In this paper, a table lookup-based computing technique is proposed to perform convolutional neural network (CNN) inference without multiplication, and its…”
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5
Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets
Published in Applied physics express (01-07-2024)“…Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from…”
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6
High-Frequency, Conformable Organic Amplifiers
Published in Advanced materials (Weinheim) (01-05-2016)“…Large‐bandwidth, low‐operation‐voltage, and uniform organic amplifiers are fabricated on ultrathin foils. By the integration of short‐channel OTFTs and AlOx…”
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7
Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs
Published in IEEE access (2024)“…This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs)…”
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8
Intermittent Resonant Clocking Enabling Power Reduction at Any Clock Frequency for Near/Sub-Threshold Logic Circuits
Published in IEEE journal of solid-state circuits (01-02-2014)“…In order to eliminate the limitation of a narrow frequency range of conventional resonant clocking, intermittent resonant clocking (IRC) is proposed for…”
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9
Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality
Published in IEEE access (2023)“…This study investigates the origin of low-frequency (LF) 1/<inline-formula> <tex-math notation="LaTeX">f </tex-math></inline-formula> noise in Si n-channel…”
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10
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
Published in Solid-state electronics (01-06-2017)“…•Parasitic resistance and its variability are obstacles for the scaling of FinFETs.•Reducing the fin thickness degrades in parasitic resistance and its…”
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11
Increase of Crosstalk Noise Due to Imbalanced Threshold Voltage Between nMOS and pMOS in Subthreshold Logic Circuits
Published in IEEE journal of solid-state circuits (01-08-2013)“…An abnormal increase in crosstalk noise in subthreshold logic circuits is observed for the first time. When the threshold voltages ( V TH) of nMOS and pMOS are…”
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Journal Article Conference Proceeding -
12
Lookup Table-Based Computing-in-Memory Macro Approximating Dot Products Without Multiplications for Energy-Efficient CNN Inference
Published in IEEE transactions on circuits and systems. I, Regular papers (01-10-2023)“…This paper presents a lookup table-based dot product approximation (LDA) for energy-efficient convolutional neural network (CNN) inference as another…”
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13
Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM
Published in IEEE transactions on nuclear science (01-08-2011)“…In this paper, the soft error rate (SER) induced by neutrons in 65-nm 10T static random access memory (SRAM) is measured over a wide range of supply voltages…”
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14
Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering
Published in Materials science in semiconductor processing (01-11-2017)“…We have demonstrated that sub-10nm-thick heteroepitaxial Ge films on Si (001) having smooth surfaces can be obtained by DC magnetron sputtering. Ge films grown…”
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15
Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability
Published in Japanese Journal of Applied Physics (01-04-2017)“…This paper discusses the impact of the tunneling probability on the variability of tunnel field-effect transistors (TFETs). Isoelectronic trap (IET)…”
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16
Image-Classifier Deep Convolutional Neural Network Training by 9-bit Dedicated Hardware to Realize Validation Accuracy and Energy Efficiency Superior to the Half Precision Floating Point Format
Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (01-01-2018)“…We propose a 9-bit floating point format for training image-classifier deep convolutional neural networks. The proposed floating point format has a 5-bit…”
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Conference Proceeding -
17
Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory
Published in Japanese Journal of Applied Physics (01-04-2016)“…Variations of eight-transistor (8T) tunnel FET (TFET) static random access memory (SRAM) cells at ultra-low supply voltage (VDD) of 0.3 V are discussed. A…”
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18
On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors
Published in Japanese Journal of Applied Physics (01-04-2017)“…The drain bias dependence of tunnel field-effect transistors (TFETs) is examined on the basis of the measured characteristics and device simulation to…”
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19
Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering
Published in Japanese Journal of Applied Physics (01-04-2017)“…We structurally and electrically characterize sub-10-nm-thick heteroepitaxial Ge films on Si(001), formed by heated sputtering and subsequent rapid thermal…”
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20
Edge Artificial Intelligence Chips for the Cyberphysical Systems Era
Published in Computer (Long Beach, Calif.) (01-01-2021)“…Artificial intelligence (AI) chips draw much attention for cyberphysical systems since AI chips are promising to realize edge AI computing. We introduce the…”
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