Search Results - "Fuketa, H."
-
1
Angular Dependency of Neutron-Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM
Published in IEEE transactions on nuclear science (01-12-2012)“…This paper reports neutron-induced MCU (Multiple Cell Upset) measured in 0.4-V 65-nm 10T SRAM at two incident angles of 0 ° and 60 ° . The measurement results…”
Get full text
Journal Article -
2
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
Published in 2023 International Electron Devices Meeting (IEDM) (09-12-2023)“…We experimentally performed temperature-dependent current‒voltage (I‒V) analysis of Si n-MOSFETs down to 15 mK, for the first time. We found that the saturated…”
Get full text
Conference Proceeding -
3
Adaptive Performance Compensation With In-Situ Timing Error Predictive Sensors for Subthreshold Circuits
Published in IEEE transactions on very large scale integration (VLSI) systems (01-02-2012)“…We present an adaptive technique for compensating manufacturing and environmental variability in subthreshold circuits using "canary flip-flop (FF)," which can…”
Get full text
Journal Article -
4
Insole Pedometer With Piezoelectric Energy Harvester and 2 V Organic Circuits
Published in IEEE journal of solid-state circuits (01-01-2013)“…A shoe insole pedometer, which consists of a piezoelectric energy harvester and a 2 V organic pedometer circuit, has been developed as a first step toward the…”
Get full text
Journal Article Conference Proceeding -
5
Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01-12-2016)“…We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by using isoelectronic trap (IET)…”
Get full text
Conference Proceeding -
6
Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM
Published in IEEE transactions on nuclear science (01-08-2011)“…In this paper, the soft error rate (SER) induced by neutrons in 65-nm 10T static random access memory (SRAM) is measured over a wide range of supply voltages…”
Get full text
Journal Article -
7
On-Chip Measurement System for Within-Die Delay Variation of Individual Standard Cells in 65-nm CMOS
Published in IEEE transactions on very large scale integration (VLSI) systems (01-10-2012)“…New measurement system for characterizing within-die delay variations of individual standard cells is presented. The proposed measurement system are able to…”
Get full text
Journal Article -
8
Minimizing Energy of Integer Unit by Higher Voltage Flip-Flop: V-Aware Dual Supply Voltage Technique
Published in IEEE transactions on very large scale integration (VLSI) systems (01-06-2013)“…To achieve the most energy-efficient operation, this brief presents a circuit design technique for separating the power supply voltage (V DD ) of flip-flops…”
Get full text
Journal Article -
9
Intermittent resonant clocking enabling power reduction at any clock frequency for 0.37V 980kHz near-threshold logic circuits
Published in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (01-02-2013)“…In order to improve the energy efficiency of logic circuits, reductions in capacitance (C) and power supply voltage (V DD ) are required, as energy consumption…”
Get full text
Conference Proceeding -
10
An Average-Performance-Oriented Subthreshold Processor Self-Timed by Memory Read Completion
Published in IEEE transactions on circuits and systems. II, Express briefs (01-05-2011)“…A self-timed subthreshold processor was developed in 65-nm complimentary metal-oxide-semiconductor process. This four-stage reduced instruction set computer…”
Get full text
Journal Article -
11
13% Power reduction in 16b integer unit in 40nm CMOS by adaptive power supply voltage control with parity-based error prediction and detection (PEPD) and fully integrated digital LDO
Published in 2012 IEEE International Solid-State Circuits Conference (01-02-2012)“…Scaling power supply voltages (V DD 's) of logic circuits down to the sub/near-threshold region is a promising approach to achieve significant power…”
Get full text
Conference Proceeding -
12
Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature
Published in IEEE transactions on circuits and systems. II, Express briefs (01-12-2012)“…Temperature dependence of 256 within-die random gate delay variations in sub-threshold logic circuits is measured in 40-nm CMOS test chips. When the…”
Get full text
Journal Article -
13
Adaptive performance compensation with on-chip variation monitoring
Published in 2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS) (01-08-2011)“…This paper discusses adaptive performance control with two types of on-chip variation sensors. The first sensor aims to extract several device-parameters for…”
Get full text
Conference Proceeding -
14
Adaptive performance compensation with in-situ timing error prediction for subthreshold circuits
Published in 2009 IEEE Custom Integrated Circuits Conference (01-09-2009)“…This paper presents an adaptive technique for compensating manufacturing and environmental variability in subthreshold circuits using ldquocanary…”
Get full text
Conference Proceeding -
15
Differential Detection of MSK with Nonredundant Error Correction
Published in IEEE transactions on communications (01-06-1979)“…A proposed scheme for differential detection of MSK with nonredundant error correction utilizes the output detected from the difference in phase between…”
Get full text
Journal Article -
16
Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM
Published in 2010 IEEE International Reliability Physics Symposium (01-01-2010)“…This paper presents measurement results of alpha-particle-induced soft errors and multiple cell upsets (MCUs) in 65-nm 10 T SRAM with a wide range of supply…”
Get full text
Conference Proceeding -
17
1µm-thickness 64-channel surface electromyogram measurement sheet with 2V organic transistors for prosthetic hand control
Published in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (01-02-2013)“…A surface electromyogram (EMG), which measures a voltage waveform produced by skeletal muscles on skin, is an important tool for applications detecting the…”
Get full text
Conference Proceeding -
18
A closed-form expression for estimating minimum operating voltage (VDDmin) of CMOS logic gates
Published in 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC) (05-06-2011)“…In this paper, a closed-form expression for estimating a minimum operating voltage (VDDmin) of CMOS logic gates is proposed. VDDmin is defined as the minimum…”
Get full text
Conference Proceeding -
19
Increase of crosstalk noise due to imbalanced threshold voltage between NMOS and PMOS in sub-threshold logic circuits
Published in Proceedings of the IEEE 2012 Custom Integrated Circuits Conference (01-09-2012)“…Abnormal increase of the crosstalk noise in the sub-threshold logic circuits is found for the first time. When the threshold voltages (V TH ) of nMOS and pMOS…”
Get full text
Conference Proceeding -
20
K-Band Mobile Earth Station for Domestic Satellite Communications System
Published in IEEE transactions on communications (01-02-1980)“…Design considerations of a K -band (30/20 GHz) mobile earth station for a domestic satellite communications system are described. A Japanese Medium Capacity…”
Get full text
Journal Article