Search Results - "Fujiwara, Katsutoshi"

Polarity control of GaN grown on ZnO ( 000 1 ¯ ) surfaces by Kobayashi, Atsushi, Kawaguchi, Yuji, Ohta, Jitsuo, Fujioka, Hiroshi, Fujiwara, Katsutoshi, Ishii, Akira

“…We have investigated the growth temperature dependence of the structural properties of GaN deposited on O-polarity ZnO ( 000 1 ¯ ) using pulsed laser…”
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Real-time observation of phase-controlled molecular wave-packet interference by Ohmori, Kenji, Katsuki, Hiroyuki, Chiba, Hisashi, Honda, Masahiro, Hagihara, Yusuke, Fujiwara, Katsutoshi, Sato, Yukinori, Ueda, Kiyoshi

“…The quantum interference of two molecular wave packets has been precisely controlled in the B electronic state of the I2 molecule by using a pair of fs laser…”
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DFT Study for Growth of m-Plane GaN/ZnO Interfaces by Oda, Yasuhiro, Ishii, Akira, Fujiwara, Katsutoshi

“…We have performed density-functional theory calculations to investigate the alignment of gallium (Ga) and nitrogen (N) atoms at m-plane wurtzite GaN/ZnO…”
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Polarity Control of ZnO on N-Terminated GaN(0001) Surfaces by Fujiwara, Katsutoshi, Ishii, Akira, Ebisuzaki, Toshikazu, Abe, Tomoki, Ando, Koshi

“…We investigated the dynamics of zinc and oxygen adatoms deposited as atomic zinc and atomic oxygen on an N-polarity GaN(0001) surface, and the stability of 1…”
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Epitaxial growth of ZnO crystal on the Si-terminated 6H-SiC(0001) surface using the first-principles calculation by Fujiwara, Katsutoshi, Ishii, Akira, Abe, Tomoki, Ando, Koshi

“…The dynamics of the zinc and the oxygen adatom supplied as atomic zinc and atomic oxygen on the 6H-SiC(0001) surface is investigated using the first-principles…”
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Theoretical investigation on the structural properties of ZnO grown on sapphire by Fujiwara, Katsutoshi, Ishii, Akira, Ebisuzaki, Toshikazu, Abe, Tomoki, Ando, Koshi

“…We have investigated the growth mechanisms of ZnO on the c-plane sapphire(0001) substrates by the first-principles calculation. The first-principles total…”
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Theoretical analysis of bandsaw roll-tensioning by FUJIWARA, Katsutoshi

“…"Bandsaw roll-tensioning was theoretically analyzed by amplifying Aoyama's fundamental equations. In the analysis the accumulated amount of tension after…”
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Experimental verification of bandsaw roll-tensioning theory by Fujiwara, K. (Forestry and Forest Products Research Inst., Tsukuba, Ibaraki (Japan))

“…The validity of a bandsaw roll-tensioning theory developed by the author is verified based on a model experiment. It is shown that the actual roll-tensioning…”
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First principles calculation of Indium migration barrier energy on an InAs(001) surface by Fujiwara, Katsutoshi, Ishii, Akira, Aisaka, Tsuyoshi

“…The migration barrier energy of In adatom on the As terminated InAs(001) surface has been studied by using the first-principles calculation. It is found that…”
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First-Principles Calculation for the Polarity During ZnO Crystals Grown on the C-Terminated 6H–SiC(0001) Surface by Fujiwara, Katsutoshi, Ishii, Akira, Ebisuzaki, Toshikazu, Abe, Tomoki, Ando, Koshi

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First principles calculation of Indium migration barrier energy on an InAs(001) surface by FUJIWARA, Katsutoshi, ISHII, Akira, AISAKA, Tsuyoshi

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Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxy by Kakuda, Naoki, Tsukamoto, Shiro, Ishii, Akira, Fujiwara, Katsutoshi, Ebisuzaki, Toshikazu, Yamaguchi, Koichi, Arakawa, Yasuhiko

“…Reconstructed surfaces on Sb-irradiated GaAs(001) formed by molecular beam epitaxy have been studied by in-situ scanning tunneling microscopy (STM). The…”
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DFT calculation for adatom adsorption on graphene sheet as a prototype of carbon nano tube functionalization by Ishii, Akira, Yamamoto, Masana, Asano, Hiroki, Fujiwara, Katsutoshi

“…DFT calculation of various atomic species on graphene sheet is investigated as prototypes for formation of nano-structures on carbon nanotube (CNT) wall. We…”
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Growth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces by Fujiwara, Katsutoshi, Ishii, Akira, Ebisuzaki, Toshikazu, Kobayashi, Atsushi, Kawaguchi, Yuji, Ohta, Jitsuo, Fujioka, Hiroshi

“…We have investigated the stability of the 1ML-GaN on the O-polarity ZnO(000-1) interface structure using the first-principles calculation. We have found in our…”
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