Search Results - "Fujioka, Hiroshi"

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces by Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

“…Integrating the functions of superconductors and semiconductors by epitaxial growth can lead to the fabrication of quantum devices such as on-chip quantum…”
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Reduction of Twin Boundary in NbN Films Grown on Annealed AlN by Kihira, Shunya, Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

“…Superconducting nanowire single-photon detectors (SNSPDs) based on ultrathin niobium nitride (NbN) films have attracted much attention owing to their high…”
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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition by Ueno, Kohei, Taiga, Fudetani, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm 2 V −1 s −1 at an electron concentration of 2.9 × 10 20  cm…”
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Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates by Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

“…•An ultrathin NbN film on AlN exhibits a step-and-terrace structure on the surface.•The NbN exhibited distinct streaky RHEED patterns and reasonable XRD…”
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Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications by Maeda, Ryota, Ueno, Kohei, Fujioka, Hiroshi

“…This study describes the selective formation process of highly degenerate n-type GaN (d-GaN) ohmic contacts for the source and drain regions of GaN high…”
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Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan by Wakimizu, Rie, Fujioka, Hiroshi

“…In Japan, recently, the number of children with severe motor and intellectual disabilities (SMID) is steadily increasing. Caregivers such as parents and family…”
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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering by Shon, Jeong Woo, Ohta, Jitsuo, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However,…”
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Electrical properties of Si-doped GaN prepared using pulsed sputtering by Arakawa, Yasuaki, Ueno, Kohei, Imabeppu, Hideyuki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

“…In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition…”
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Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes by Fudetani, Taiga, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We report the characteristics of heavily Si-doped GaN prepared by pulsed sputtering deposition (PSD) and its application as tunneling junction (TJ) contacts…”
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Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering by Kobayashi, Atsushi, Honda, Yoshio, Maeda, Takuya, Okuda, Tomoya, Ueno, Kohei, Fujioka, Hiroshi

“…ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric properties, holding promise for diverse electronic device applications…”
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Wide range doping controllability of p-type GaN films prepared via pulsed sputtering by Fudetani, Taiga, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…The growth of Mg-doped GaN over a wide doping range is demonstrated via pulsed sputtering deposition (PSD). All samples show p-type conductivity without any…”
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Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels by Morikawa, Soichiro, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of…”
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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering by Arakawa, Yasuaki, Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

“…We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system…”
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Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN by Ma, Bei, Tang, Mingchuan, Ueno, Kohei, Kobayashi, Atsushi, Morita, Ken, Fujioka, Hiroshi, Ishitani, Yoshihiro

“…Heavily Si-doped GaN layers grown by pulsed sputtering deposition (PSD) on Fe-doped GaN/Al2O3 templates are investigated using infrared reflectance and…”
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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO by Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

“…m -Plane GaN and InGaN films were grown on m -plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the…”
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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique by Nakamura, Eiji, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi, Oshima, Masaharu

“…P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of 480 °C and dramatic reduction in the growth process temperature for…”
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Field-effect transistors based on cubic indium nitride by Oseki, Masaaki, Okubo, Kana, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

“…Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors…”
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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures by Hideki Harada, Seiya Muta, Tatsuyuki Kakuma, Misa Ukeda, So Ota, Maiko Hirata, Hiroshi Fujioka, Osamu Nakashima, Barbara Dietel, Miyuki Tauchi

“…Background Bispectral index (BIS) monitoring is a widely used non-invasive method to monitor the depth of anesthesia. However, in the event of surgeries…”
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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures by Harada, Hideki, Muta, Seiya, Kakuma, Tatsuyuki, Ukeda, Misa, Ota, So, Hirata, Maiko, Fujioka, Hiroshi, Nakashima, Osamu, Dietel, Barbara, Tauchi, Miyuki

“…Background Bispectral index (BIS) monitoring is a widely used non-invasive method to monitor the depth of anesthesia. However, in the event of surgeries…”
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Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition by Kobayashi, Atsushi, Oseki, Masaaki, Ohta, Jitsuo, Fujioka, Hiroshi

“…We grew thick InN films on yttria‐stabilized zirconia (YSZ) substrates by high‐growth‐rate pulsed sputtering deposition. X‐ray diffraction analysis revealed…”
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