Search Results - "Fu, Jeffrey S."
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High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology
Published in Microelectronics and reliability (01-06-2010)“…The dc, flicker noise, power, and temperature dependence of AlGaAs/InGaAs enhancement-mode pseudomorphic high electron mobility transistors (E-pHEMTs) were…”
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2
A fully integrated multi-band ED-mode pHEMT VCO using variable transformer and switched resonator
Published in International journal of electronics (01-06-2012)“…A systematic approach to the design of a reconfigurable LC-coupled voltage-controlled oscillator (VCO) is proposed in this article. The focus is on the choice…”
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3
Compact LTCC bandpass filter with vertically folded structure
Published in Microwave and optical technology letters (01-06-2011)“…This work designs miniaturized stub‐type microstrip bandpass filters and develops a novel vertical interconnection scheme in a multilayer structure to design…”
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High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2SX+UV interface treatment
Published in Microelectronics and reliability (01-02-2011)Get full text
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5
A 30-65 GHz wideband double-balanced gilbert-cell mixer using GaAs pHEMT technology
Published in Microwave and optical technology letters (01-05-2012)“…This article presents a wideband, double‐balanced microwave/millimeter‐wave Gilbert‐cell mixer, using 0.15 μm GaAs pHEMT technology. Two baluns and a matching…”
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6
A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line
Published in Microwave and optical technology letters (01-05-2011)“…A high‐gain Ka‐band 0.18‐μm CMOS low‐noise amplifier with semicircle stacked grounded coplanar waveguide (SCS‐GCPW) structure transmission line is proposed…”
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7
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers
Published in Microelectronics and reliability (01-05-2010)“…In this work, the high-k material of gadolinium oxide layer (Gd 2O 3) and zirconium oxide layer (ZrO 2) thin films were fabricated as the gate dielectric…”
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8
Electromechanical controlled phased array dumbbell EBG beam steerer
Published in Microelectronics and reliability (01-12-2010)“…A steerable phased array antenna driven mechanically is realized by utilizing the variation of dumbbell electromagnetic bandgap (EBG) structures. The variation…”
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9
Development of phased array antenna by controlling the filling factor of periodic structure
Published in International journal of RF and microwave computer-aided engineering (01-05-2007)“…A phased array antenna is realized by utilizing the variation of filling factor (FF) of electromagnetic bandgap (EBG) structures. The variation takes place…”
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10
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs
Published in Microelectronics and reliability (01-12-2011)“…The operation of high power RF transistor generates a huge amount of heat and thermal effect is a major consideration for improving the efficiency of power…”
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11
An UWB CMOS voltage-controlled oscillator with 2-6 GHz tuning-range using active inductor technology
Published in Microwave and optical technology letters (01-09-2008)“…An ultra‐wideband voltage‐controlled oscillator (VCO) in a standard 0.18‐μm CMOS process is presented in this article. The designed VCO adopts two active…”
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12
Data fusion of multiradar system by using genetic algorithm
Published in IEEE transactions on aerospace and electronic systems (01-04-2002)“…Detection system with distributed sensors and data fusion. are increasingly being used by surveillance systems. There has been a great deal of theoretical…”
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13
Harmonics suppression investigations of pHEMT single-pole-single-throw switches using multi-gate structures
Published in Microelectronic engineering (01-12-2010)“…In this study, multi-gate GaAs pseudomorphic high electron mobility transistor (pHEMT) single-pole-single-throw (SPST) microwave switches were implemented and…”
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14
Particle swarm optimization and finite-element based approach for microwave filter design
Published in IEEE transactions on magnetics (01-05-2005)“…A novel approach is proposed for compact planar microwave filter design. The powerful particle swarm optimization (PSO) and finite-element method (FEM) are…”
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Journal Article Conference Proceeding -
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High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT
Published in Microelectronics and reliability (01-08-2011)“…The InAlAs/InGaAs metal–oxide–semiconductor metamorphic high electron mobility transistors (MOS-mHEMTs) were demonstrated by using liquid-phase HBr treatment…”
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16
Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer
Published in Microelectronics and reliability (2012)“…► A novel GaAs E/D-mode pHEMT technology was developed. ► The MIMS-gate insulator was high-k praseodymium oxide. ► This E-mode pHEMTs exhibit a gate VON of +1…”
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NOVEL CHEBYSHEV DISTRIBUTED CHIRPED PHOTONIC BANDGAP (PBG) STRUCTURES
Published in Journal of infrared, millimeter and terahertz waves (01-04-2006)“…A microstrip transmission line on a Chebyshev distributed chirped I-D photonic bandgap structure (PBGS) is proposed. Two different approaches are utilized to…”
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Non-uniform Chebyshev distributed chirped dumbbell-shaped photonic bandgap structure (PBGs) low-pass filter
Published in Compel (01-01-2010)“…Purpose - The purpose of this paper is to introduce a non-uniform Chebyshev distributed low-pass filter (LPF) with dumbbell-shaped photonic bandgap structure…”
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A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology
Published in Microelectronics and reliability (01-12-2011)“…► We present a novel ESD protected wideband LNA using E-mode pHEMT dual-gate clamps. ► This clamp achieved a low on-state resistance and uniform parasitic…”
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Journal Article -
20
High-Performance 90-nm Dual-Gate nMOSFETs With Field-Plate Technology
Published in IEEE electron device letters (01-03-2011)“…In this letter, high-performance 90-nm dual-gate nMOSFETs with field-plate (FP) metal were demonstrated for high-power and low-frequency noise device…”
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