Search Results - "Fu, Jeffrey S."

Refine Results
  1. 1

    High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology by Chiu, Hsien-Chin, Yang, Chih-Wei, Chen, Chao-Hung, Lin, Che-Kai, Fu, Jeffrey S., Tu, Hsing-Yuan, Tang, Shiang-Feng

    Published in Microelectronics and reliability (01-06-2010)
    “…The dc, flicker noise, power, and temperature dependence of AlGaAs/InGaAs enhancement-mode pseudomorphic high electron mobility transistors (E-pHEMTs) were…”
    Get full text
    Journal Article
  2. 2

    A fully integrated multi-band ED-mode pHEMT VCO using variable transformer and switched resonator by Ke, Po-Yu, Chiu, Hsien-Chin, Fu, Jeffrey S.

    Published in International journal of electronics (01-06-2012)
    “…A systematic approach to the design of a reconfigurable LC-coupled voltage-controlled oscillator (VCO) is proposed in this article. The focus is on the choice…”
    Get full text
    Journal Article
  3. 3

    Compact LTCC bandpass filter with vertically folded structure by Chin, Kuo-Sheng, Hung, Jian-Luen, Huang, Chun-Wei, Fu, Jeffrey S., Karmakar, Nemai C.

    Published in Microwave and optical technology letters (01-06-2011)
    “…This work designs miniaturized stub‐type microstrip bandpass filters and develops a novel vertical interconnection scheme in a multilayer structure to design…”
    Get full text
    Journal Article
  4. 4
  5. 5

    A 30-65 GHz wideband double-balanced gilbert-cell mixer using GaAs pHEMT technology by Kao, Hsuan-Ling, Ke, J.Y., Yeh, C. S., Chiu, Hsien-Chin, Fu, Jeffrey S.

    Published in Microwave and optical technology letters (01-05-2012)
    “…This article presents a wideband, double‐balanced microwave/millimeter‐wave Gilbert‐cell mixer, using 0.15 μm GaAs pHEMT technology. Two baluns and a matching…”
    Get full text
    Journal Article
  6. 6

    A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line by Chiu, Hsien-Chin, Chen, Ting-Huei, Fu, Jeffrey S., Nirmalathas, T. A.

    Published in Microwave and optical technology letters (01-05-2011)
    “…A high‐gain Ka‐band 0.18‐μm CMOS low‐noise amplifier with semicircle stacked grounded coplanar waveguide (SCS‐GCPW) structure transmission line is proposed…”
    Get full text
    Journal Article
  7. 7

    Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers by Chiu, Hsien-Chin, Chen, Chao-Hung, Yang, Chih-Wei, Fu, Jeffrey S., Wang, Cheng-Shun

    Published in Microelectronics and reliability (01-05-2010)
    “…In this work, the high-k material of gadolinium oxide layer (Gd 2O 3) and zirconium oxide layer (ZrO 2) thin films were fabricated as the gate dielectric…”
    Get full text
    Journal Article
  8. 8

    Electromechanical controlled phased array dumbbell EBG beam steerer by Fu, Jeffrey S., Yang, Dong-Hua, Yeh, Chin-I, Karmakar, N.C., Cheng, Jui-Ching, Chin, Kuo-Sheng, Chiu, Hsien-Chin, Xiao, Jian Kang

    Published in Microelectronics and reliability (01-12-2010)
    “…A steerable phased array antenna driven mechanically is realized by utilizing the variation of dumbbell electromagnetic bandgap (EBG) structures. The variation…”
    Get full text
    Journal Article
  9. 9

    Development of phased array antenna by controlling the filling factor of periodic structure by Mollah, Mohammad Nurunnabi, Karmakar, Nemai C., Fu, Jeffrey S.

    “…A phased array antenna is realized by utilizing the variation of filling factor (FF) of electromagnetic bandgap (EBG) structures. The variation takes place…”
    Get full text
    Journal Article
  10. 10

    Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs by Chiu, Hsien-Chin, Lin, Chao-Wei, Lin, Che-Kai, Kao, Hsuan-Ling, Fu, Jeffrey S.

    Published in Microelectronics and reliability (01-12-2011)
    “…The operation of high power RF transistor generates a huge amount of heat and thermal effect is a major consideration for improving the efficiency of power…”
    Get full text
    Journal Article
  11. 11

    An UWB CMOS voltage-controlled oscillator with 2-6 GHz tuning-range using active inductor technology by Wei, Chien-Cheng, Chiu, Hsien-Chin, Yang, Yi-Tzu, Fu, Jeffrey S., Feng, Wu-Shiung

    Published in Microwave and optical technology letters (01-09-2008)
    “…An ultra‐wideband voltage‐controlled oscillator (VCO) in a standard 0.18‐μm CMOS process is presented in this article. The designed VCO adopts two active…”
    Get full text
    Journal Article
  12. 12

    Data fusion of multiradar system by using genetic algorithm by Weixian Liu, Yilong Lu, Fu, J.S.

    “…Detection system with distributed sensors and data fusion. are increasingly being used by surveillance systems. There has been a great deal of theoretical…”
    Get full text
    Journal Article
  13. 13

    Harmonics suppression investigations of pHEMT single-pole-single-throw switches using multi-gate structures by Chiu, Hsien-Chin, Cheng, Chia-Shih, Fu, Jeffrey S., Hsueh, Kuang-Po

    Published in Microelectronic engineering (01-12-2010)
    “…In this study, multi-gate GaAs pseudomorphic high electron mobility transistor (pHEMT) single-pole-single-throw (SPST) microwave switches were implemented and…”
    Get full text
    Journal Article
  14. 14

    Particle swarm optimization and finite-element based approach for microwave filter design by Wen Wang, Yilong Lu, Fu, J.S., Yong Zhong Xiong

    Published in IEEE transactions on magnetics (01-05-2005)
    “…A novel approach is proposed for compact planar microwave filter design. The powerful particle swarm optimization (PSO) and finite-element method (FEM) are…”
    Get full text
    Journal Article Conference Proceeding
  15. 15

    High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT by Chiu, Hsien-Chin, Chen, Chao-Hung, Lin, Che-Kai, Fu, Jeffrey S.

    Published in Microelectronics and reliability (01-08-2011)
    “…The InAlAs/InGaAs metal–oxide–semiconductor metamorphic high electron mobility transistors (MOS-mHEMTs) were demonstrated by using liquid-phase HBr treatment…”
    Get full text
    Journal Article
  16. 16

    Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer by Chen, Chao-Hung, Chiu, Hsien-Chin, Yang, Chih-Wei, Fu, Jeffrey S., Chien, Feng-Tso

    Published in Microelectronics and reliability (2012)
    “…► A novel GaAs E/D-mode pHEMT technology was developed. ► The MIMS-gate insulator was high-k praseodymium oxide. ► This E-mode pHEMTs exhibit a gate VON of +1…”
    Get full text
    Journal Article
  17. 17

    NOVEL CHEBYSHEV DISTRIBUTED CHIRPED PHOTONIC BANDGAP (PBG) STRUCTURES by Fu, Jeffrey S, Mollah Md Nurunnabi, Karmakar, Nemai C

    “…A microstrip transmission line on a Chebyshev distributed chirped I-D photonic bandgap structure (PBGS) is proposed. Two different approaches are utilized to…”
    Get full text
    Journal Article
  18. 18

    Non-uniform Chebyshev distributed chirped dumbbell-shaped photonic bandgap structure (PBGs) low-pass filter by Fu, Jeffrey S., Yang, Dong-Hua, Yeh, Chin-I, Chiu, Hsien-Chin, Chin, Kuo-Sheng, Kao, Hsuan-Ling, Cheng, Jui-Ching

    Published in Compel (01-01-2010)
    “…Purpose - The purpose of this paper is to introduce a non-uniform Chebyshev distributed low-pass filter (LPF) with dumbbell-shaped photonic bandgap structure…”
    Get full text
    Journal Article
  19. 19

    A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology by Chiu, Hsien-Chin, Cheng, Chia-Shih, Kao, Hsuan-Ling, Fu, Jeffrey S., Cui, Qiang, Liou, Juin J.

    Published in Microelectronics and reliability (01-12-2011)
    “…► We present a novel ESD protected wideband LNA using E-mode pHEMT dual-gate clamps. ► This clamp achieved a low on-state resistance and uniform parasitic…”
    Get full text
    Journal Article
  20. 20

    High-Performance 90-nm Dual-Gate nMOSFETs With Field-Plate Technology by Fu, J S, Hsien-Chin Chiu, Po-Yu Ke, Ting-Huei Chen, Wu-Shiung Feng

    Published in IEEE electron device letters (01-03-2011)
    “…In this letter, high-performance 90-nm dual-gate nMOSFETs with field-plate (FP) metal were demonstrated for high-power and low-frequency noise device…”
    Get full text
    Journal Article