Search Results - "Fu, Chengju"
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Preparation and Ferroelectric Properties of Ho3+/Mo6+ Cosubstituted Bi4Ti3O12 Thin Films by Sol–Gel Method
Published in Journal of electronic materials (01-02-2010)“…We have prepared Ho 3+ /Mo 6+ cosubstituted bismuth titanate [(Bi 3.6 Ho 0.4 ) 3.99 - Ti 2.985 Mo 0.015 O 12 , BHTM] thin films on Pt/Ti/SiO 2 /Si substrates…”
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Electromechanical bending response of PZT/CNT-based polymer laminates subjected to concentrated load
Published in International journal of mechanics and materials in design (01-06-2014)“…This paper presents the electromechanical behavior of piezoelectric/carbon nanotube (CNT)-based polymer laminates under three-point bending. The laminate was…”
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Effect of La Doping on Microstructure and Ferroelectric Properties of Bi4Ti3O12 Thin Films Prepared by Sol-gel Method
Published in Journal of Wuhan University of Technology. Materials science edition (01-10-2008)“…The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the…”
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Damping property of epoxy-based composite embedded with sol–gel-derived Pb(Zr0.53Ti0.47)O3 thin film
Published in Journal of materials science. Materials in electronics (2011)“…The Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) thin films were prepared on Pt/Ti/SiO 2 /Si substrate by sol–gel method. The effect of the annealing holding time on…”
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Damping property of epoxy-based composite embedded with sol-gel-derived Pb(Zr sub(0.53)Ti sub(0.47))O sub(3) thin film
Published in Journal of materials science. Materials in electronics (01-08-2011)“…The Pb(Zr sub(0.53)Ti sub(0.47))O sub(3) (PZT) thin films were prepared on Pt/Ti/SiO sub(2)/Si substrate by sol-gel method. The effect of the annealing holding…”
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Preparation and Ferroelectric Properties of Ho^sup 3+^/Mo^sup 6+^ Cosubstituted Bi^sub 4^Ti^sub 3^O^sub 12^ Thin Films by Sol-Gel Method
Published in Journal of electronic materials (01-02-2010)“…We have prepared Ho^sup 3+^/Mo^sup 6+^ cosubstituted bismuth titanate [(Bi^sub 3.6^Ho^sub 0.4^)^sub 3.99^-Ti^sub 2.985^Mo^sub 0.015^O^sub 12^, BHTM] thin films…”
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Microstructure and Ferroelectric Properties of (Bi 0.9Ho 0.1) 3.999Ti 2.997V 0.003O 12 Thin Films Prepared by Sol-gel Method for Nonvolatile Memory
Published in Journal of materials science & technology (2010)“…The (Bi 0.9Ho 0.1) 3.999Ti 2.997V 0.003O 12 (BHTV) films have been prepared on Pt/Ti/SiO 2/Si substrates by solgel method. The microstructure and ferroelectric…”
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Microstructure and Ferroelectric Properties of (Bi0.9Ho0.1)3.999Ti2.997V0.003O12 Thin Films Prepared by Sol-gel Method for Nonvolatile Memory
Published in Journal of materials science & technology (2010)“…The (Bi0.9Ho0.1)3.999Ti2.997V0.003012 (BHTV) films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric…”
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