Search Results - "Frye, C. D"

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate by Padavala, Balabalaji, Frye, C. D, Wang, Xuejing, Ding, Zihao, Chen, Ruifen, Dudley, Michael, Raghothamachar, Balaji, Lu, Peng, Flanders, B. N, Edgar, J. H

“…The boron phosphide (BP) semiconductor has many remarkable features, including high thermal neutron capture cross section of the 10B isotope, making it…”
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Self-healing in B12P2 through Mediated Defect Recombination by Huber, S. P, Gullikson, E, Frye, C. D, Edgar, J. H, van de Kruijs, R. W. E, Bijkerk, F, Prendergast, D

“…The icosahedral boride B12P2 has been reported to exhibit “self-healing” properties, after transmission electron microscopy recordings of sample surfaces,…”
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Beta Radiation Hardness of GYGAG(Ce) Transparent Ceramic Scintillators by Jarrell, J. T., Cherepy, N. J., Seeley, Z. M., Murphy, J. W., Swanberg, E. L., Voss, L. F., Frye, C. D., Stoyer, M. A., Henderson, R. A., O'Neal, S. P., Nikolic, R. J.

“…GYGAG(Ce) transparent ceramic garnet scintillators were irradiated with electrons from 0.5 to 2 MeV with fluences from <inline-formula> <tex-math…”
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Selenium-iodide: A low melting point eutectic semiconductor by Voss, L. F., Murphy, J. W., Shao, Q., Henderson, R. A., Frye, C. D., Stoyer, M. A., Nikolic, R. J.

“…Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices…”
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Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC by Frye, C. D, Saw, C. K, Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J, Edgar, J. H

“…B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [112̅0] and a custom miscut 4° toward the…”
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α Irradiation Response on the Electronic Transport Properties of p-B12P2 by Frye, C. D., Shao, Q., Murphy, J. W., Harrison, S. E., Voss, L. F., Edgar, J. H., Nikolic, R. J.

“…B 12 P 2 , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission…”
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Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide by Padavala, Balabalaji, Frye, C.D., Ding, Zihao, Chen, Ruifen, Dudley, Michael, Raghothamachar, Balaji, Khan, Neelam, Edgar, J.H.

“…Epitaxial growth of boron phosphide (BP) films on 4H- and 6H-SiC(0001) substrates with on- and off-axis orientations was investigated in this study. The films…”
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High temperature isotropic and anisotropic etching of silicon carbide using forming gas by Frye, C. D., Funaro, Devin, Conway, A. M., Hall, D. L., Grivickas, P. V., Bora, M., Voss, L. F.

“…Plasma-etched micropillars in 4H-SiC were etched in forming gas (4% H2, 96% N2) at 1500, 1550, and 1600 °C at 2.4 and 9.4 standard liters per min (slm). At 2.4…”
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High temperature isotropic and anisotropic etching of silicon carbide using forming gas by Frye, C. D., Funaro, Devin, Conway, A. M., Hall, D. L., Grivickas, P. V., Bora, M., Voss, L. F.

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CVD growth and properties of boron phosphide on 3C-SiC by Padavala, Balabalaji, Frye, C.D., Wang, Xuejing, Raghothamachar, Balaji, Edgar, J.H.

“…Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study,…”
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α Irradiation Response on the Electronic Transport Properties of p-B12P2 by Frye, C. D., Shao, Q., Murphy, J. W., Harrison, S. E., Voss, L. F., Edgar, J. H., Nikolic, R. J.

“…B12P2, a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron…”
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Suppression of Rotational Twins in Epitaxial B 12 P 2 on 4H-SiC by Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., Edgar, J. H.

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Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC by Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., Edgar, J. H.

“…B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$11\bar{20}$] and a custom miscut 4°…”
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Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC by Frye, C. D., Saw, C. K., Padavala, Balabalaji, Nikolić, R. J., Edgar, J. H.

“…Icosahedral boron phosphide (B12P2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment,…”
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CVD growth and properties of boron phosphide on 3C-SiC by Padavala, Balabalaji, Frye, C. D., Wang, Xuejing, Raghothamachar, Balaji, Edgar, J. H.

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Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC by Frye, C.D., Saw, C.K., Padavala, Balabalaji, Nikolić, R.J., Edgar, J.H.

“…Icosahedral boron phosphide (B12P2) is a wide bandgap semiconductor (3.35eV) that has been reported to “self-heal” from high-energy electron bombardment,…”
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Self-healing in B 12 P 2 through Mediated Defect Recombination by Huber, S. P., Gullikson, E., Frye, C. D., Edgar, J. H., van de Kruijs, R. W. E., Bijkerk, F., Prendergast, D.

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Reactive ion etching and characterization of p-silk ultra low-k film by Murthy, B.R., Mukherjee-Roy, M., Krishnamoorthy, A., Frye, D.C.

“…Reactive ion etch (RIE) of p-SiLK, a spin-on polymer based ultra low-k (ULK) material with a k value of /spl sim/2.2 was characterized and its influence on…”
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Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide by Padavala, Balabalaji, Frye, C. D., Ding, Zihao, Chen, Ruifen, Dudley, Michael, Raghothamachar, Balaji, Khan, Neelam, Edgar, J. H.

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Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] by Padavala, Balabalaji, Frye, C.D., Ding, Zihao, Chen, Ruifen, Dudley, Michael, Raghothamachar, Balaji, Khan, Neelam, Edgar, J.H.

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