Search Results - "Froment, B."
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1
On the use of the coda of seismic noise autocorrelations to compute H/V spectral ratios
Published in Geophysical journal international (01-03-2020)“…SUMMARY The horizontal to vertical spectral ratio (HVSR) of seismic ambient noise has been proven to be a fast and efficient method for characterizing the 1-D…”
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2
Reconstructing Green's function by correlation of the coda of the correlation (C3) of ambient seismic noise
Published in Journal of Geophysical Research - Solid Earth (01-11-2008)“…Analysis of long‐range correlation of the microseisms has been shown to provide reliable measurements of surface wave speeds that can be used for seismic…”
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3
Deformation at depth associated with the 12 May 2008 MW 7.9 Wenchuan earthquake from seismic ambient noise monitoring
Published in Geophysical research letters (16-01-2013)“…We track the temporal evolution of seismic wave speed to detect changes in material properties at depth, driven by deformation associated with the 2008 Mw 7.9…”
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4
Estimation of the Local Seismic Amplification on an Industrialized Site in the French Rhône Valley
Published in Pure and applied geophysics (01-07-2022)“…The so-called site effects caused by superficial geological layers may be responsible for strong ground motion amplification in certain configurations. We…”
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5
Seismic noise correlations to image structural and mechanical changes associated with the Mw 7.9 2008 Wenchuan earthquake
Published in Journal of geophysical research. Solid earth (01-04-2014)“…We locate temporal changes of seismic wave speed and scattering properties of the crust associated with the 2008 Mw7.9 Wenchuan earthquake. To that end, we…”
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Journal Article -
6
Imaging along-strike variations in mechanical properties of the Gofar transform fault, East Pacific Rise
Published in Journal of geophysical research. Solid earth (01-09-2014)“…A large part of global plate motion on mid‐ocean ridge transform faults (RTFs) is not accommodated as major earthquakes. When large earthquakes do occur, they…”
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7
Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni-Si reactive film formation
Published in Applied physics letters (25-07-2005)“…Combined x-ray diffraction and wafer curvature measurements during annealing of Ni thin films (13 nm) deposited on Si (001) reveal distinct stages in stress…”
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8
Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs
Published in IEEE electron device letters (01-02-2007)“…In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect…”
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9
Structural control on earthquake behaviors revealed by high-resolution Vp/Vs imaging along the Gofar transform fault, East Pacific Rise
Published in Earth and planetary science letters (01-10-2018)“…The Gofar transform fault (GTF), 4°S on the East Pacific Rise, can generate Mw 5.5–6 earthquakes quasiperiodically on some specific patches that are separated…”
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10
Inhibition of sex pheromone communications of Trichogramma brassicae (Hymenoptera) by the insecticide chlorpyrifos
Published in Environmental toxicology and chemistry (01-06-1998)“…Biological control agents such as entomophagus insects (e.g., Trichogramma sp.) are important components of integrated pest management (IPM) programs. Because…”
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11
Monitoring seismic wave velocity changes associated with the Mw 7.9 Wenchuan earthquake: increasing the temporal resolution using curvelet filters
Published in Geophysical journal international (01-06-2015)“…The aim of this study is to improve the temporal resolution of seismic wave velocity variations measured using ambient noise correlations. We first reproduce…”
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12
Earthquake rupture below the brittle-ductile transition in continental lithospheric mantle
Published in Science advances (01-03-2017)“…Earthquakes deep in the continental lithosphere are rare and hard to interpret in our current understanding of temperature control on brittle failure. The…”
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13
Nickel vs. cobalt silicide integration for sub-50nm CMOS
Published in ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003 (2003)“…In this work, NiSi SALICIDE has been fully integrated with sub-50 nm gate length transistors and compared to its CoSi/sub 2/ counterpart. Nickel thickness has…”
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Conference Proceeding -
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CMP-less integration of 40nm-gate totally silicided (TOSI) bulk transistors using selective S/D Si epitaxy and ultra-low gates
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)“…In this paper, we present an innovative way of fabricating CMOS transistors with totally Ni-silicided (Ni-TOSI) gates without using a CMP step before the full…”
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Conference Proceeding -
15
Silicidation induced strain phenomena in totally silicided (TOSI) gate transistors
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)“…In this paper, we present a detailed analysis of the performance and transport characteristics in totally Ni silicided (TOSI) devices. For two different TOSI…”
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Conference Proceeding -
16
Accuracy improvement of the "Single Pattern Driver" method for the characterization of interconnect capacitance in the context of nanometer technology development
Published in Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) (2004)“…Characterization, modelling and monitoring of interconnect capacitance are of first interest for CMOS and BiCMOS technology development, especially for circuit…”
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Conference Proceeding -
17
Seismic noise correlations to image structural and mechanical changes associated with the M w 7.9 2008 Wenchuan earthquake
Published in Journal of geophysical research. Solid earth (01-04-2014)“…We locate temporal changes of seismic wave speed and scattering properties of the crust associated with the 2008 M w 7.9 Wenchuan earthquake. To that end, we…”
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Journal Article -
18
Clinical Pharmacology of Apixaban in Nephrotic Syndrome: PO2375
Published in Journal of the American Society of Nephrology (01-10-2020)Get full text
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Migrations, telecommunications and social bonds: a new form of place attachments? The case of the Réunion community
Published in Annales de géographie (01-09-2005)Get full text
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Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)“…A wide workfunction (/spl Phi//sub m/) tuning range from 4.29eV to 4.99eV using total silicidation of doped polysilicon gate with nickel is presented. As, B…”
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Conference Proceeding