Search Results - "Frisone, Sam"

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  1. 1

    Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN by Titze, Michael, Katzenmeyer, Aaron, Frisone, Sam, Ohlhausen, James A., Flores, Anthony, Campbell, DeAnna, Li, Bingjun, Wang, Yongqiang, Han, Jung, Bielejec, Edward S., Goldman, Rachel S.

    Published in AIP advances (01-04-2024)
    “…We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAISs) for scalable focused-ion-beam (FIB) implantation doping of GaN…”
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    Journal Article
  2. 2

    Formation of large-area MoS2 thin films by oxygen-catalyzed sulfurization of Mo thin films by Jo, Seong Soon, Li, Yifei, Singh, Akshay, Kumar, Abinash, Frisone, Sam, LeBeau, James M., Jaramillo, Rafael

    “…While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting…”
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    Journal Article
  3. 3

    Morphology and Crystallinity Effects of Nanochanneled Niobium Oxide Electrodes for Na-Ion Batteries by Koroni, Cyrus, Dixon, Kiev, Barnes, Pete, Hou, Dewen, Landsberg, Luke, Wang, Zihongbo, Grbic’, Galib, Pooley, Sarah, Frisone, Sam, Olsen, Tristan, Muenzer, Allison, Nguyen, Dustin, Bernal, Blayze, Xiong, Hui

    Published in ACS Nanoscience Au (21-02-2024)
    “…Niobium pentoxide (Nb2O5) is a promising negative electrode for sodium ion batteries (SIBs). By engineering the morphology and crystallinity of nanochanneled…”
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    Journal Article
  4. 4

    Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices by Chang, Alexander S., Li, Bingjun, Wang, Sizhen, Frisone, Sam, Goldman, Rachel S., Han, Jung, Lauhon, Lincoln J.

    Published in Nano energy (01-11-2022)
    “…We report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar…”
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    Journal Article
  5. 5

    Low-damage, in-situ chemical etching of GaN by tertiarybutyl-chloride (TBCl) by Li, Bingjun, Wang, Sizhen, Frisone, Sam, He, Jiaheng, Cheng, Guanjie, Zhang, Zhirong, Goldman, Rachel, Han, Jung

    Published in 2022 Compound Semiconductor Week (CSW) (01-06-2022)
    “…In this study, we compared different process-treated surfaces by building Schottky diodes, and performing photoluminescence (PL) and Rutherfold backscattering…”
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    Conference Proceeding