Search Results - "Friedman, Adam L"

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  1. 1

    Surface Doping and Band Gap Tunability in Hydrogenated Graphene by Matis, Bernard R, Burgess, James S, Bulat, Felipe A, Friedman, Adam L, Houston, Brian H, Baldwin, Jeffrey W

    Published in ACS nano (24-01-2012)
    “…We report the first observation of the n-type nature of hydrogenated graphene on SiO2 and demonstrate the conversion of the majority carrier type from…”
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    Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films by Stephen, Gregory M., Vail, Owen. A., Lu, Jiwei, Beck, William A., Taylor, Patrick J., Friedman, Adam L.

    Published in Scientific reports (16-03-2020)
    “…Topological materials, such as the quintessential topological insulators in the Bi 2 X 3 family (X = O, S, Se, Te), are extremely promising for beyond Moore’s…”
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    Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films by Friedman, Adam L., Hanbicki, Aubrey T., Perkins, F. Keith, Jernigan, Glenn G., Culbertson, James C., Campbell, Paul M.

    Published in Scientific reports (19-06-2017)
    “…Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond,…”
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  4. 4

    High-speed metamagnetic switching of FeRh through Joule heating by Blumenschein, Nicholas A., Stephen, Gregory M., Cress, Cory D., LaGasse, Samuel W., Hanbicki, Aubrey T., Bennett, Steven P., Friedman, Adam L.

    Published in Scientific reports (21-12-2022)
    “…Due to its proximity to room temperature and demonstrated high degree of temperature tunability, FeRh’s metamagnetic ordering transition is attractive for…”
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    Electronic Hybridization of Large-Area Stacked Graphene Films by Robinson, Jeremy T, Schmucker, Scott W, Diaconescu, C. Bogdan, Long, James P, Culbertson, James C, Ohta, Taisuke, Friedman, Adam L, Beechem, Thomas E

    Published in ACS nano (22-01-2013)
    “…Direct, tunable coupling between individually assembled graphene layers is a next step toward designer two-dimensional (2D) crystal systems, with relevance for…”
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    Reducing flicker noise in chemical vapor deposition graphene field-effect transistors by Arnold, Heather N., Sangwan, Vinod K., Schmucker, Scott W., Cress, Cory D., Luck, Kyle A., Friedman, Adam L., Robinson, Jeremy T., Marks, Tobin J., Hersam, Mark C.

    Published in Applied physics letters (15-02-2016)
    “…Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent…”
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  7. 7

    Surface potential and thin film quality of low work function metals on epitaxial graphene by DeJarld, Matthew, Campbell, Paul M., Friedman, Adam L., Currie, Marc, Myers-Ward, Rachael L., Boyd, Anthony K., Rosenberg, Samantha G., Pavunny, Shojan P., Daniels, Kevin M., Gaskill, D. K.

    Published in Scientific reports (07-11-2018)
    “…Metal films deposited on graphene are known to influence its electronic properties, but little is known about graphene’s interactions with very low work…”
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    2D Monolayers for Superior Transparent Electromagnetic Interference Shielding by Yost, Dillon C., Friedman, Adam L., Hanbicki, Aubrey T., Grossman, Jeffrey C.

    Published in ACS nano (28-06-2022)
    “…With countless modern technologies utilizing wireless communication, materials that can selectively allow transmission of visible light and prevent…”
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    Homoepitaxial graphene tunnel barriers for spin transport by Friedman, Adam L., van ‘t Erve, Olaf M. J., Robinson, Jeremy T., Whitener, Keith E., Jonker, Berend T.

    Published in AIP advances (01-05-2016)
    “…Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information…”
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  10. 10

    Large-Area Synthesis of Continuous and Uniform MoS2 Monolayer Films on Graphene by McCreary, Kathleen M., Hanbicki, Aubrey T., Robinson, Jeremy T., Cobas, Enrique, Culbertson, James C., Friedman, Adam L., Jernigan, Glenn G., Jonker, Berend T.

    Published in Advanced functional materials (05-11-2014)
    “…Heterostructures composed of multiple layers of different atomically thin materials are of interest due to their unique properties and potential for new device…”
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  11. 11

    Spin–orbit coupling proximity effect in MoS2/Fe3GeTe2 heterostructures by Tu, Zhiyin, Zhou, Tong, Ersevim, Thomas, Arachchige, Hasitha Suriya, Hanbicki, Aubrey T., Friedman, Adam L., Mandrus, David, Ouyang, Min, Žutić, Igor, Gong, Cheng

    Published in Applied physics letters (24-01-2022)
    “…Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new…”
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  12. 12

    Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control by Cress, Cory D, Schmucker, Scott W, Friedman, Adam L, Dev, Pratibha, Culbertson, James C, Lyding, Joseph W, Robinson, Jeremy T

    Published in ACS nano (22-03-2016)
    “…We investigate hyperthermal ion implantation (HyTII) as a means for substitutionally doping layered materials such as graphene. In particular, this systematic…”
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  13. 13

    Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions by Cobas, Enrique, Friedman, Adam L, van’t Erve, Olaf M. J, Robinson, Jeremy T, Jonker, Berend T

    Published in Nano letters (13-06-2012)
    “…Graphene has been widely studied for its high in-plane charge carrier mobility and long spin diffusion lengths. In contrast, the out-of-plane charge and spin…”
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  14. 14

    Room-Temperature Spin Transport in Cd3As2 by Stephen, Gregory M, Hanbicki, Aubrey T, Schumann, Timo, Robinson, Jeremy T, Goyal, Manik, Stemmer, Susanne, Friedman, Adam L

    Published in ACS nano (23-03-2021)
    “…As the need for ever greater transistor density increases, the commensurate decrease in device size approaches the atomic limit, leading to increased energy…”
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  15. 15

    van der Waals Screening by Single-Layer Graphene and Molybdenum Disulfide by Tsoi, Stanislav, Dev, Pratibha, Friedman, Adam L, Stine, Rory, Robinson, Jeremy T, Reinecke, Thomas L, Sheehan, Paul E

    Published in ACS nano (23-12-2014)
    “…A sharp tip of atomic force microscope is employed to probe van der Waals forces of a silicon oxide substrate with adhered graphene. Experimental results…”
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    Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene by Friedman, Adam L., Tedesco, Joseph L., Campbell, Paul M., Culbertson, James C., Aifer, Edward, Perkins, F. Keith, Myers-Ward, Rachael L., Hite, Jennifer K., Eddy, Charles R., Jernigan, Glenn G., Gaskill, D. Kurt

    Published in Nano letters (13-10-2010)
    “…We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene…”
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    Effect of Sn Doping on Surface States of Bi2Se3 Thin Films by Stephen, Gregory M, Naumov, Ivan, Tyagi, Siddharth, Vail, Owen A, DeMell, Jennifer E, Dreyer, Michael, Butera, Robert E, Hanbicki, Aubrey T, Taylor, Patrick J, Mayergoyz, Isaak, Dev, Pratibha, Friedman, Adam L

    Published in Journal of physical chemistry. C (10-12-2020)
    “…Bi2Se3, widely studied as a topological insulator, has great potential for applications in low-power electronics and quantum computing. Intrinsic doping,…”
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