Search Results - "Frasca, A.J."

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  1. 1

    Proton Irradiation of Silicon Schottky Barrier Power Diodes by Harris, R.D., Frasca, A.J.

    Published in IEEE transactions on nuclear science (01-08-2006)
    “…Commercial silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the…”
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    Journal Article
  2. 2

    Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes by Harris, R.D., Frasca, A.J., Patton, M.O.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V…”
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    Journal Article
  3. 3

    Proton Irradiation of Silicon Schottky Barrier Power Diodes by Harris, R.D., Frasca, A.J.

    “…Commercial silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the…”
    Get full text
    Conference Proceeding
  4. 4

    Neutron And Gamma Irradiation Effects On Power Semiconductor Switches by Schwarze, G.E., Frasca, A.J.

    “…The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer…”
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    Conference Proceeding
  5. 5