LWIR HgCdTe Detectors Grown on Ge Substrates

Long-wavelength infrared (LWIR) HgCdTe p -on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p -on- n DLHJ detector structure (used ea...

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Bibliographic Details
Published in:	Journal of electronic materials Vol. 37; no. 9; pp. 1465 - 1470
Main Authors:	Vilela, M.F., Lofgreen, D.D., Smith, E.P.G., Newton, M.D., Venzor, G.M., Peterson, J.M., Franklin, J.J., Reddy, M., Thai, Y., Patten, E.A., Johnson, S.M., Tidrow, M.Z.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Boston Springer US 01-09-2008 Springer Springer Nature B.V
Subjects:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Electronics Electronics and Microelectronics Exact sciences and technology Infrared radiation Instrumentation Materials Materials Science Mercury cadmium telluride Methods of deposition of films and coatings; film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical and Electronic Materials Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Structure and morphology; thickness Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thermography Thin film structure and morphology HgCdTe/Ge molecular beam epitaxy LWIR HgCdTe/Si HgCdTe coefficient of thermal expansion infrared photodiodes Spectral response Fourier transform spectroscopy p n junction p n heterojunctions Etch pit Cadmium tellurides Rocking curve Thermal expansion coefficient Molecular beam epitaxy Mercury tellurides Silicon Double layers Wafer Impurity density Infrared detector Secondary ion mass spectrometry Photodiode Quantum yield X ray diffraction Photodetector Array II-VI semiconductors Germanium Crystalline structure
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Summary:	Long-wavelength infrared (LWIR) HgCdTe p -on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p -on- n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μ m to 11 μ m LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency. Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical etch pit densities in mid 10 6 cm −2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly identical for HgCdTe grown on either Ge or Si substrates.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-008-0443-2