Search Results - "Francis, A. Matt"

An Integrated SiC CMOS Gate Driver for Power Module Integration by Barlow, Matthew, Ahmed, Shamim, Francis, A. Matt, Mantooth, H. Alan

“…With high-temperature power devices available, the support circuitry required for efficient operation, such as a gate driver, is needed as part of a complete…”
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A SiC CMOS Digitally Controlled PWM Generator for High-Temperature Applications by Roy, Sajib, Murphree, Robert C., Abbasi, Affan, Rahman, Ashfaqur, Ahmed, Shamim, Gattis, James Austin, Francis, A. Matt, Holmes, Jim, Mantooth, H. Alan, Jia Di

“…This paper describes a silicon carbide pulse width modulation (PWM) signal generator in the 1.2 μm HiT-SiC CMOS process developed by Raytheon Systems Ltd. The…”
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A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit by Kauppila, J.S., Sternberg, A.L., Alles, M.L., Francis, A.M., Holmes, J., Amusan, O.A., Massengill, L.W.

“…A single-event model capable of capturing bias- dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with…”
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Materials for high-temperature digital electronics by Pradhan, Dhiren K., Moore, David C., Francis, A. Matt, Kupernik, Jacob, Kennedy, W. Joshua, Glavin, Nicholas R., Olsson, Roy H., Jariwala, Deep

“…Silicon microelectronics, consisting of complementary metal–oxide–semiconductor technology, have changed nearly all aspects of human life from communication to…”
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Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets by Francis, A.M., Dimitrov, D., Kauppila, J., Sternberg, A., Alles, M., Holmes, J., Mantooth, H.A.

“…When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…This design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with…”
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Materials for High Temperature Digital Electronics by Pradhan, Dhiren K, Moore, David C, Francis, A. Matt, Kupernik, Jacob, Kennedy, W. Joshua, Glavin, Nicholas R, OlssonIII, Roy H, Jariwala, Deep

“…Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from…”
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An Integrated SiC Photo-Transistor for Ultraviolet Detection in High-Temperature Environments by Holmes, Jim, Francis, A. Matt, Chiolino, Nicholas, Barlow, Matthew, Perez, Sonia, Getreu, Ian

“…The work described herein applies a patented integrated silicon carbide (SiC) bipolar junction transistor (BJT) to the detection of ultraviolet (UV) light in…”
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An integrated SiC CMOS gate driver by Barlow, Matthew, Ahmed, Shamim, Mantooth, H. Alan, Francis, A. Matt

“…In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented. The gate driver is designed in a 15V, 1.2 μm silicon carbide…”
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Compact modeling of environmentally induced radiation effects on electrical devices by Huang, X., Francis, A.M., Lostetter, A.B., Mantooth, H.A.

“…This paper presents the feasibility of formalizing a compact modeling methodology for environmentally induced radiation effects, and of implementing that…”
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An integrated gate driver in 4H-SiC for power converter applications by Ericson, M. Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., Janke, Devon D., Ezell, Dianne B., Ryu, Sei-Hyung, Lamichhane, Ranjan, Francis, A. Matt, Shepherd, Paul D., Glover, Michael D., Mantooth, H. Alan, Whitaker, Bret, Cole, Zach, Passmore, Brandon, McNutt, Ty

“…A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but…”
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