Search Results - "Fröhlich Karol"

Atomic layer deposition of lithium metaphosphate from H3PO4 and P4O10 facilitated via direct liquid injection: Experiment and theory by Kundrata, Ivan, Mošková, Antónia, Moško, Martin, Mičušík, Matej, Dobročka, Edmund, Fröhlich, Karol

“…We report the use of H 3 PO 4 as a reactant in atomic layer deposition (ALD) of lithium metaphosphate. The ALD growth cycle starts by injection of the lithium…”
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Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films by Kundrata, Ivan, Fröhlich, Karol, Vančo, Lubomír, Mičušík, Matej, Bachmann, Julien

“…Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour…”
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Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon–Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films by Sahoo, Prangya P., Güneren, Alper, Hudec, Boris, Mikolášek, Miroslav, Nada, Ahmed, Precnerová, Magdaléna, Mičušík, Matej, Lenčéš, Zoltán, Nádaždy, Peter, Fröhlich, Karol

“…Silicon (Si) is a promising anode material due to its high theoretical capacity and abundant presence as the second most common element in the earth’s crust…”
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Raman spectroscopy of silicon with nanostructured surface by Kadlečíková, Magdaléna, Vančo, Ľubomír, Breza, Juraj, Mikolášek, Miroslav, Hušeková, Kristína, Fröhlich, Karol, Procel, Paul, Zeman, Miro, Isabella, Olindo

“…We compared the morphology and Raman response of nanoscale shaped surfaces of Si substrates versus monocrystalline Si. Samples were structured by reactive ion…”
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Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors by Aarik, Lauri, Arroval, Tõnis, Rammula, Raul, Mändar, Hugo, Sammelselg, Väino, Hudec, Boris, Hušeková, Kristína, Fröhlich, Karol, Aarik, Jaan

“…Possibilities for atomic layer deposition of Al2O3 films from chloride and ozone were studied in order to avoid application of precursors that could leave…”
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Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures by JANCOVIC, Peter, HUDEC, Boris, DOBROCKA, Edmund, DERER, Ján, FEDOR, Ján, FRÖHLICH, Karol

“…We prepared Pt/HfO2/TiN metal-insulator-metal structures for resistive switching experiments. The HfO2 films were prepared by thermal, ozone and plasma…”
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Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films by Kukli, Kaupo, Kemell, Marianna, Vehkamäki, Marko, Heikkilä, Mikko J., Mizohata, Kenichiro, Kalam, Kristjan, Ritala, Mikko, Leskelä, Markku, Kundrata, Ivan, Fröhlich, Karol

“…Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2…”
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Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current by Aarik, Jaan, Arroval, Tõnis, Aarik, Lauri, Rammula, Raul, Kasikov, Aarne, Mändar, Hugo, Hudec, Boris, Hušeková, Kristina, Fröhlich, Karol

“…Crystallization of TiO2 thin films grown by atomic layer deposition from TiCl4 and O3 on RuO2 layers was investigated with the aim to develop alternative…”
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Additive Manufacturing in Atomic Layer Processing Mode by Kundrata, Ivan, Barr, Maïssa K. S., Tymek, Sarah, Döhler, Dirk, Hudec, Boris, Brüner, Philipp, Vanko, Gabriel, Precner, Marian, Yokosawa, Tadahiro, Spiecker, Erdmann, Plakhotnyuk, Maksym, Fröhlich, Karol, Bachmann, Julien

“…Additive manufacturing (3D printing) has not been applicable to micro‐ and nanoscale engineering due to the limited resolution. Atomic layer deposition (ALD)…”
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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region by Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, Stefan, Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.

“…A Schottky-barrier normally off InAlN-based high-electron-mobility transistor (HEMT) with selectively etched access regions, high off-state breakdown, and low…”
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Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes by Murakami, Katsuhisa, Rommel, Mathias, Hudec, Boris, Rosová, Alica, Hušeková, Kristína, Dobročka, Edmund, Rammula, Raul, Kasikov, Aarne, Han, Jeong Hwan, Lee, Woongkyu, Song, Seul Ji, Paskaleva, Albena, Bauer, Anton J, Frey, Lothar, Fröhlich, Karol, Aarik, Jaan, Hwang, Cheol Seong

“…Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl4 or a Ti­(O-i-C3H7)4 precursor were…”
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Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs by Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján

“…•The metal-oxide gate stack was realized by a single photolitographic step.•Low temperature ALD Al2O3 layer was used for MOS gate stack.•Plasma enhancement and…”
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Trap-assisted tunnelling current in MIM structures by Racko Juraj, Mikolášek Miroslav, Granzner Ralf, Breza Juraj, Donoval Daniel, Grmanová Alena, Harmatha Ladislav, Schwierz Frank, Fröhlich Karol

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3D resistive RAM cell design for high-density storage class memory—a review by Hudec, Boris, Hsu, Chung-Wei, Wang, I-Ting, Lai, Wei-Li, Chang, Che-Chia, Wang, Taifang, Fröhlich, Karol, Ho, Chia-Hua, Lin, Chen-Hsi, Hou, Tuo-Hung

“…In this article, we comprehensively review recent progress in the Re RAM cell technology for 3D integration focusing on a material/device level. First we…”
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Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation by Sahoo, Prangya P, Mikolášek, Miroslav, Hušeková, Kristína, Dobročka, Edmund, Šoltýs, Ján, Ondrejka, Peter, Kemény, Martin, Harmatha, Ladislav, Mičušík, Matej, Fröhlich, Karol

“…We report on the properties of metal–insulator–semiconductor (MIS) photoanodes for water oxidation employing a thin RuO2–(IrO2) film as a top catalytic layer…”
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On Passive Permutation Circuits by Such, Ondrej, Linn, Eike, Klimo, Martin, Jancovic, Peter, Fratrik, Milan, Frohlich, Karol

“…We present a new way to passively implement permutation circuits, a concept of importance in bit-oriented or line-oriented designs, used in communications,…”
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Additive Manufacturing in Atomic Layer Processing Mode (Small Methods 5/2022) by Kundrata, Ivan, Barr, Maïssa K. S., Tymek, Sarah, Döhler, Dirk, Hudec, Boris, Brüner, Philipp, Vanko, Gabriel, Precner, Marian, Yokosawa, Tadahiro, Spiecker, Erdmann, Plakhotnyuk, Maksym, Fröhlich, Karol, Bachmann, Julien

“…Front Cover The invention of atomic‐layer additive manufacturing (ALAM): In ALAM, controlled surface chemistry is performed with spatially constrained flows of…”
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Si-Based Metal–Insulator–Semiconductor Structures with RuO 2 –(IrO 2 ) Films for Photoelectrochemical Water Oxidation by Sahoo, Prangya P., Mikolášek, Miroslav, Hušeková, Kristína, Dobročka, Edmund, Šoltýs, Ján, Ondrejka, Peter, Kemény, Martin, Harmatha, Ladislav, Mičušík, Matej, Fröhlich, Karol

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Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy by Niu, Gang, Calka, Pauline, Huang, Peng, Sharath, Sankaramangalam Ulhas, Petzold, Stefan, Gloskovskii, Andrei, Fröhlich, Karol, Zhao, Yudi, Kang, Jinfeng, Schubert, Markus Andreas, Bärwolf, Florian, Ren, Wei, Ye, Zuo-Guang, Perez, Eduardo, Wenger, Christian, Alff, Lambert, Schroeder, Thomas

“…The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and…”
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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation by Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J.-C., Cico, K., Frohlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J.

“…We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n ++ GaN. Selective etching of the…”
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