Search Results - "Frégnaux, M."

Stoichiometry loss induced by ionic bombardment of InP surfaces: A challenge for electrochemistry combined with XPS by Béchu, S., Aureau, D., Vigneron, J., Gonçalves, A-M., Frégnaux, M., Bouttemy, M., Etcheberry, A.

“…•Oxidized metallic In-enriched layer on InP detected by electrochemistry and XPS.•Synergy of electrochemistry and XPS analyses to investigate surface…”
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Gallium-containing sulfide binary and ternary materials by atomic layer deposition: precursor reactivities and growth fine chemistries by Schneider, N., Frégnaux, M., Bouttemy, M., Donsanti, F., Etcheberry, A., Lincot, D.

“…Gallium sulfide (GaxS) and copper gallium sulfide (CuxGaySz) were synthetized by atomic layer deposition (ALD), using copper acetylacetonate Cu(acac)2,…”
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Photoelectrochemical passivation of undoped n-InP by ultra-thin polyphosphazene film: Towards a perfect photoanode? by Gonçalves, A.M., Visagli, G., Rakotoarimanana, C.P., Njel, C., Frégnaux, M., Etcheberry, A.

“…For the first time, the photoanodic behavior of undoped n-InP (≈ 1015 atoms.cm−3) is studied in liquid ammonia at low temperature (-55 °C) under atmospheric…”
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Chemical engineering of Cu(In,Ga)Se 2 surfaces: An absolute deoxidation studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy signatures by Loubat, A., Bouttemy, M., Gaiaschi, S., Aureau, D., Frégnaux, M., Mercier, D., Vigneron, J., Chapon, P., Etcheberry, A.

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Chemistry and electronics of single layer MoS2 domains from photoelectron spectromicroscopy using laboratory excitation sources by Frégnaux, M., Kim, H., Rouchon, D., Derycke, V., Bleuse, J., Voiry, D., Chhowalla, M., Renault, O.

“…In the recent context of emerging two‐dimensional (2D) materials, a comprehensive set of spatially resolved photoelectron spectroscopic techniques providing…”
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Chemical engineering of Cu(In,Ga)Se2 surfaces: An absolute deoxidation studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy signatures by Loubat, A., Bouttemy, M., Gaiaschi, S., Aureau, D., Frégnaux, M., Mercier, D., Vigneron, J., Chapon, P., Etcheberry, A.

“…CIGS (Cu(In,Ga)Se2) absorbers are among the most efficient for photo-conversion. As part of their manufacturing cycle, absorber surface preparation is crucial…”
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Chemistry and electronics of single layer MoS 2 domains from photoelectron spectromicroscopy using laboratory excitation sources by Frégnaux, M., Kim, H., Rouchon, D., Derycke, V., Bleuse, J., Voiry, D., Chhowalla, M., Renault, O.

“…In the recent context of emerging two‐dimensional (2D) materials, a comprehensive set of spatially resolved photoelectron spectroscopic techniques providing…”
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Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4 by Chi, Z., Tarntair, Fu-Gow, Frégnaux, M., Wu, Wan-Yu, Sartel, C., Madaci, I., Chapon, P., Sallet, V., Dumont, Y., Pérez-Tomás, A., Horng, R.H., Chikoidze, E.

“…The spinel group is a growing family of materials with general formulation AB2X4 (the X anion typically being a chalcogen like O and S) with many advanced…”
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Mass spectrometry techniques in the context of nanometrology by Fregnaux, M., Gaumet, J.J., Dalmasso, S., Laurenti, J.P., Schneider, R.

“…[Display omitted] ► CdS QDs smaller than 6nm diameter were produced by soft chemistry methods. ► MALDI-TOF mass spectrometry technique is applied to QDs for…”
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Investigating the optical behavior of electrochemically passivated highly doped n-InP with PPP nanofilm by Labchir, N., Odonnell, J., Fregnaux, M., Gonçalves, A.-M., kaassamani, S., Etcheberry, A., Pelouard, J.L.

“…InP is one of the most promising substrates for optoelectronic devices as a direct band gap semiconductor. In this study, highly doped n-InP substrate has been…”
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Chemistry and electronics of single layer MoS sub(2) domains from photoelectron spectromicroscopy using laboratory excitation sources by Fregnaux, M, Kim, H, Rouchon, D, Derycke, V, Bleuse, J, Voiry, D, Chhowalla, M, Renault, O

“…In the recent context of emerging two-dimensional (2D) materials, a comprehensive set of spatially resolved photoelectron spectroscopic techniques providing…”
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Surface reactivity of CIGS absorber on soda-lime and flexible substrates studied by XPS: a global approach of deoxidation, ageing and alkali elements distribution by Bechu, S., Loubat, A., Bouttemy, M., Balestrieri, M., Gaiaschi, S., Hildebrandt, T., Achard, V., Fregnaux, M., Aureau, D., Vigneron, J., Donsanti, F., Jubault, M., Chapon, P., Lincot, D., Guillemoles, J.F., Etcheberry, A.

“…CIGS based solar cells are still part of the most popular solar cells developed. A chemical study is presented here by using XPS measurements, characterizing…”
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