Search Results - "Fox, Alfred"
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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
Published in ACS applied materials & interfaces (14-01-2015)“…We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on…”
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Experimental I – V(T) and C – V Analysis of Si Planar p-TFETs on Ultrathin Body
Published in IEEE transactions on electron devices (01-12-2016)“…We present the experimental analysis of planar Si p-tunnel FETs (TFETs) fabricated on ultrathin body Silicon on Insulator (SOI) substrates by an optimized…”
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Experimental Investigation of – Characteristics of Si Tunnel FETs
Published in IEEE electron device letters (01-06-2017)“…This letter presents an experimental capacitance-voltage C-V analysis for Si p-tunnel FETs (TFETs) fabricated on ultrathin body at various frequencies and…”
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Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs
Published in IEEE transactions on electron devices (01-07-2006)“…In this paper, the influence of a 10-nm-thick silicon-dioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction…”
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RF Performance of InAlN/GaN HFETs and MOSHFETs With f TL G up to 21 GHz;k m
Published in IEEE electron device letters (01-03-2010)“…The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al 2O 3/InAlN/GaN metal-oxide-semiconductor HFETs…”
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RF Performance of InAlN/GaN HFETs and MOSHFETs With [Formula Omitted] up to 21 [Formula Omitted]
Published in IEEE electron device letters (01-03-2010)“…The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and [Formula Omitted]/InAlN/GaN metal-oxide-semiconductor…”
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RF Performance of InAlN/GaN HFETs and MOSHFETs With f T A L G up to 21 GHz a mu m
Published in IEEE electron device letters (01-03-2010)“…The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al 2 O 3 /InAlN/GaN metal-oxide-semiconductor HFETs…”
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RF Performance of InAIN/GaN HFETs and MOSHFETs With fT x LG up to 21 GHz · μm
Published in IEEE electron device letters (2010)Get full text
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9
Augmentation of Immunologic Memory in Mice Following Treatment with Oxisuran
Published in The Journal of immunology (1950) (01-04-1974)“…Reduction of the priming dose of sheep erythrocytes to mice resulted in a diminished primary response and augmentation of priming for a subsequent secondary…”
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A Pastor Responds: Speak Out Boldly
Published in Journal of Christian nursing (1990)Get full text
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Inhibition by Oxisuran of Cell-Mediated Hypersensitivity by Decrease in Numbers of Specifically Sensitized Cells
Published in Infection and Immunity (01-10-1973)“…Classifications Services IAI Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg Facebook Google+ Mendeley Reddit…”
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Induced Sensitization of Normal Laboratory Animals to Brucella abortus Endotoxin
Published in Journal of Bacteriology (01-02-1968)“…ERRATUM ( vol. 95 , p. 1494 ) Article Usage Stats Services JB Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg…”
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Isolation of a Soluble Resistance-Enhancing Factor from Mycobacterium phlei
Published in Journal of Bacteriology (01-08-1966)“…Article Usage Stats Services JB Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg Facebook Google+ Mendeley…”
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Stimulation of Nonspecific Resistance to Infection by a Crude Cell Wall Preparation from Mycobacterium phlei
Published in Journal of Bacteriology (01-07-1966)“…Article Usage Stats Services JB Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg Facebook Google+ Mendeley…”
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Parasite Incidence in Relation to Size and Condition of Trout from Two Montana Lakes
Published in Transactions of the American Microscopical Society (01-04-1962)Get full text
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Self-Conquest Through Self-Analysis
Published in Scientific American (01-08-1933)Get full text
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At Home With Deion Sanders.(Letter to the editor)
Published in Ebony (01-08-2008)Get full text
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South African Native College: Grant From Rhodes Trust
Published in Times (London, England : 1788) (08-02-1911)Get full text
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Microwave properties of the MSM photodetectors with 2-DEG
Published in ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) (1998)“…MSM photodetectors are investigated by measurement and modelling in microwave region. Cut-off frequencies are compared for different structures and layouts…”
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Conference Proceeding