Search Results - "Fournel, F."
-
1
Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
Published in Nature nanotechnology (01-06-2010)“…The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the…”
Get full text
Journal Article -
2
Nature of tunable hole g factors in quantum dots
Published in Physical review letters (23-01-2013)“…We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked…”
Get full text
Journal Article -
3
Application of temporary adherence to improve the manufacturing of 3D thin silicon wafers
Published in International journal of adhesion and adhesives (01-06-2019)“…The presented work concerns the manufacturing of very thin silicon wafers for a 3D Integrated Circuit industrial purpose. One of the key parameters of the 3D…”
Get full text
Journal Article -
4
Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer
Published in 2020 European Conference on Optical Communications (ECOC) (01-12-2020)“…Vertical p-i-n AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on a thin InP layer bonded to silicon wafers are presented. A PL…”
Get full text
Conference Proceeding -
5
Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process
Published in Materials science in semiconductor processing (01-03-2021)“…The study deals with the handling of thin wafers in 3D integration. It concerns the fabrication of 300 mm wafers in industrial tools. Usually, the…”
Get full text
Journal Article -
6
Observation of spin-selective tunneling in SiGe nanocrystals
Published in Physical review letters (07-12-2011)“…Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the…”
Get full text
Journal Article -
7
Development and adhesion characterization of a silicon wafer for temporary bonding
Published in International journal of adhesion and adhesives (01-04-2018)“…The development of a silicon temporary carrier for thin wafer handling for 3D applications was investigated. Process selection and optimization ended up with a…”
Get full text
Journal Article -
8
Study of a silicon/glass bonded structure with a UV-curable adhesive for temporary bonding applications
Published in Microelectronic engineering (05-04-2017)“…This paper concerns the study of a temporary bonding process: 3MTM Wafer Support System. This process is dedicated to the handling of thin silicon wafers with…”
Get full text
Journal Article -
9
Interface water diffusion in silicon direct bonding
Published in Applied physics letters (12-09-2016)“…The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray…”
Get full text
Journal Article -
10
Effect of Copper–Copper Direct Bonding on Voiding in Metal Thin Films
Published in Journal of electronic materials (01-11-2015)“…Copper–copper direct bonding is a fundamental procedure in three-dimensional integration. It has been reported that voiding occurs in bonded copper layers if…”
Get full text
Journal Article Book Review -
11
Low temperature direct bonding: An attractive technique for heterostructures build-up
Published in Microelectronics and reliability (01-02-2012)“…► Assembling materials or components for innovative applications. ► Low temperature (<500 °C) direct bonding processes. ► Review of key surface preparation…”
Get full text
Journal Article -
12
FIVHeMA: Intraventricular fibrinolysis versus external ventricular drainage alone in aneurysmal subarachnoid hemorrhage: A randomized controlled trial
Published in Neuro-chirurgie (01-02-2019)“…Aneurysmal subarachnoid hemorrhage (SAH) is a devastating form of stroke, which often causes acute hydrocephalus requiring the insertion of an external…”
Get full text
Journal Article -
13
Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog
Published in AIP advances (01-04-2020)“…Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared…”
Get full text
Journal Article -
14
Transient current technique for charged traps detection in silicon bonded interfaces
Published in AIP advances (01-02-2019)“…Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and…”
Get full text
Journal Article -
15
3DVLSI with CoolCube process: An alternative path to scaling
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01-06-2015)“…3D VLSI with a CoolCube™ integration allows vertically stacking several layers of devices with a unique connecting via density above a million/mm 2 . This…”
Get full text
Conference Proceeding Journal Article -
16
Love wave biosensor for real-time detection of okadaic acid as DSP phycotoxin
Published in Sensors and actuators. B, Chemical (31-07-2012)“…This paper reports the detection of okadaic acid (OA) as a Diarrheic Shellfish Poisoning (DSP) toxin with an acoustic wave platform in real-time. According to…”
Get full text
Journal Article -
17
Engineered SiC materials for power technologies
Published in 2022 International Conference on IC Design and Technology (ICICDT) (21-09-2022)“…SmartSiC™ engineered substrates are proposed to answer the power device needs for high quality, ultra low resistivity materials. 150mm substrates demonstrate…”
Get full text
Conference Proceeding -
18
Ordering of Ge quantum dots with buried Si dislocation networks
Published in Applied physics letters (29-04-2002)“…Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range…”
Get full text
Journal Article -
19
First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers
Published in 2016 IEEE Symposium on VLSI Technology (01-06-2016)“…For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI…”
Get full text
Conference Proceeding -
20
Pre-bond megasonic cleaning with improved process control
Published in Microsystem technologies (01-04-2014)“…A pre-bond cleaning process was developed utilizing a unique, radially uniform, large area proximity type Megasonic transducer. In prior work this new cleaning…”
Get full text
Journal Article Conference Proceeding