Search Results - "Fournel, F."

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  1. 1

    Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon by Katsaros, G, De Franceschi, S, Spathis, P, Stoffel, M, Fournel, F, Mongillo, M, Bouchiat, V, Lefloch, F, Rastelli, A, Schmidt, O. G

    Published in Nature nanotechnology (01-06-2010)
    “…The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the…”
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    Journal Article
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    Nature of tunable hole g factors in quantum dots by Ares, N, Golovach, V N, Katsaros, G, Stoffel, M, Fournel, F, Glazman, L I, Schmidt, O G, De Franceschi, S

    Published in Physical review letters (23-01-2013)
    “…We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked…”
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    Journal Article
  3. 3

    Application of temporary adherence to improve the manufacturing of 3D thin silicon wafers by Abadie, K., Montméat, P., Enot, T., Fournel, F., Wimplinger, M.

    “…The presented work concerns the manufacturing of very thin silicon wafers for a 3D Integrated Circuit industrial purpose. One of the key parameters of the 3D…”
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    Journal Article
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    Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer by Besancon, C., Fanneau, P., Neel, D., Cerulo, G., Vaissiere, N., Make, D., Pommereau, F., Fournel, F., Dupre, C., Baron, T., Decobert, J.

    “…Vertical p-i-n AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on a thin InP layer bonded to silicon wafers are presented. A PL…”
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    Conference Proceeding
  5. 5

    Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process by Montméat, P., Bally, L., Dechamp, J., Enot, T., Fournel, F.

    “…The study deals with the handling of thin wafers in 3D integration. It concerns the fabrication of 300 mm wafers in industrial tools. Usually, the…”
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    Journal Article
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    Observation of spin-selective tunneling in SiGe nanocrystals by Katsaros, G, Golovach, V N, Spathis, P, Ares, N, Stoffel, M, Fournel, F, Schmidt, O G, Glazman, L I, De Franceschi, S

    Published in Physical review letters (07-12-2011)
    “…Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the…”
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    Journal Article
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    Development and adhesion characterization of a silicon wafer for temporary bonding by Montméat, P., Enot, T., Enyedi, G., Pellat, M., Thooris, J., Fournel, F.

    “…The development of a silicon temporary carrier for thin wafer handling for 3D applications was investigated. Process selection and optimization ended up with a…”
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    Journal Article
  8. 8

    Study of a silicon/glass bonded structure with a UV-curable adhesive for temporary bonding applications by Montméat, P., Enot, T., De Marco Dutra, M., Pellat, M., Fournel, F.

    Published in Microelectronic engineering (05-04-2017)
    “…This paper concerns the study of a temporary bonding process: 3MTM Wafer Support System. This process is dedicated to the handling of thin silicon wafers with…”
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    Journal Article
  9. 9

    Interface water diffusion in silicon direct bonding by Tedjini, M., Fournel, F., Moriceau, H., Larrey, V., Landru, D., Kononchuk, O., Tardif, S., Rieutord, F.

    Published in Applied physics letters (12-09-2016)
    “…The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray…”
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    Journal Article
  10. 10

    Effect of Copper–Copper Direct Bonding on Voiding in Metal Thin Films by Gondcharton, P., Imbert, B., Benaissa, L., Fournel, F., Verdier, M.

    Published in Journal of electronic materials (01-11-2015)
    “…Copper–copper direct bonding is a fundamental procedure in three-dimensional integration. It has been reported that voiding occurs in bonded copper layers if…”
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    Journal Article Book Review
  11. 11

    Low temperature direct bonding: An attractive technique for heterostructures build-up by Moriceau, H., Rieutord, F., Fournel, F., Di Cioccio, L., Moulet, C., Libralesso, L., Gueguen, P., Taibi, R., Deguet, C.

    Published in Microelectronics and reliability (01-02-2012)
    “…► Assembling materials or components for innovative applications. ► Low temperature (<500 °C) direct bonding processes. ► Review of key surface preparation…”
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    Journal Article
  12. 12

    FIVHeMA: Intraventricular fibrinolysis versus external ventricular drainage alone in aneurysmal subarachnoid hemorrhage: A randomized controlled trial by Gaberel, T., Gakuba, C., Fournel, F., Le Blanc, E., Gaillard, C., Peyro-Saint-Paul, L., Chaillot, F., Tanguy, P., Parienti, J.-J., Emery, E.

    Published in Neuro-chirurgie (01-02-2019)
    “…Aneurysmal subarachnoid hemorrhage (SAH) is a devastating form of stroke, which often causes acute hydrocephalus requiring the insertion of an external…”
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    Journal Article
  13. 13

    Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog by Pantzas, K., Fournel, F., Talneau, A., Patriarche, G., Le Bourhis, E.

    Published in AIP advances (01-04-2020)
    “…Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared…”
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    Journal Article
  14. 14

    Transient current technique for charged traps detection in silicon bonded interfaces by Bronuzzi, J., Bouvet, D., Charrier, C., Fournel, F., García, M. F., Mapelli, A., Moll, M., Rouchouze, E., Sallese, J. M.

    Published in AIP advances (01-02-2019)
    “…Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and…”
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    Journal Article
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    Love wave biosensor for real-time detection of okadaic acid as DSP phycotoxin by Fournel, F., Baco, E., Mamani-Matsuda, M., Degueil, M., Bennetau, B., Moynet, D., Mossalayi, D., Vellutini, L., Pillot, J.-P., Dejous, C., Rebière, D.

    Published in Sensors and actuators. B, Chemical (31-07-2012)
    “…This paper reports the detection of okadaic acid (OA) as a Diarrheic Shellfish Poisoning (DSP) toxin with an acoustic wave platform in real-time. According to…”
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    Journal Article
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    Ordering of Ge quantum dots with buried Si dislocation networks by Leroy, F., Eymery, J., Gentile, P., Fournel, F.

    Published in Applied physics letters (29-04-2002)
    “…Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range…”
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    Journal Article
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    Pre-bond megasonic cleaning with improved process control by Dussault, D., Liebscher, E., Fournel, F., Payen, N., Dragoi, V.

    Published in Microsystem technologies (01-04-2014)
    “…A pre-bond cleaning process was developed utilizing a unique, radially uniform, large area proximity type Megasonic transducer. In prior work this new cleaning…”
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    Journal Article Conference Proceeding