Search Results - "Fossard, F."

New method for the growth of single-walled carbon nanotubes from bimetallic nanoalloy catalysts based on Prussian blue analog precursors by Castan, A., Forel, S., Catala, L., Florea, I., Fossard, F., Bouanis, F., Andrieux-Ledier, A., Mazerat, S., Mallah, T., Huc, V., Loiseau, A., Cojocaru, C.S.

“…Catalyst engineering is a key point for selective growth of single-walled carbon nanotubes (SWCNT) with chemical vapor deposition (CVD). Here, we develop a new…”
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γ′ Precipitation Study of a Co-Ni-Based Alloy by Locq, D., Martin, M., Ramusat, C., Fossard, F., Perrut, M.

“…A Co-Ni-based alloy strengthened by γ′-(L1 2 ) precipitates was utilized to investigate the precipitation evolution after various cooling rates and several…”
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Exciton-exciton annihilation in hBN by Plaud, A., Schué, L., Watanabe, K., Taniguchi, T., Fossard, F., Ducastelle, F., Loiseau, A., Barjon, J.

“…Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by…”
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Monitoring the kinetics of the γ’ phase in the N18 superalloy using in situ electrical resistivity measurements by Benrabah, I.-E., Altinkurt, G., Fèvre, M., Dehmas, M., Denand, B., Fossard, F., Mérot, J.-S., Geandier, G., Locq, D., Perrut, M.

“…In nickel-based superalloys, temperatures related to the formation or the dissolution of the different types of γ′ precipitates are important parameters for…”
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Quantitative first-principles calculations of valence and core excitation spectra of solid C 60 by Fossard, F., Hug, G., Gilmore, K., Kas, J. J., Rehr, J. J., Vila, F. D., Shirley, E. L.

“…We present calculated valence and C 1s near-edge excitation spectra of solid C60 and experimental results measured with high-resolution electron energy-loss…”
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Chromophore Ordering by Confinement into Carbon Nanotubes by Almadori, Y, Alvarez, L, Le Parc, R, Aznar, R, Fossard, F, Loiseau, A, Jousselme, B, Campidelli, S, Hermet, P, Belhboub, A, Rahmani, A, Saito, T, Bantignies, J.-L

“…We report an experimental study on the confinement of oligothiophene derivatives into single-walled carbon nanotubes over a large range of diameter (from 0.68…”
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Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon by Cammilleri, D., Fossard, F., Débarre, D., Tran Manh, C., Dubois, C., Bustarret, E., Marcenat, C., Achatz, P., Bouchier, D., Boulmer, J.

“…Gas Immersion Laser Doping (GILD) of silicon with boron has shown excellent performances in terms of junction depth, box-like profile, dopant concentration and…”
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Optical and electrical properties of laser doped Si:B in the alloy range by Bhaduri, A., Kociniewski, T., Fossard, F., Boulmer, J., Débarre, D.

“…► Optically controlled GILD laser doping process reaches 3% B in Si by 0.03% steps. ► GILD made B-doped Si pseudomorphic layers at up to 3% B/Si by controlled…”
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Gas Immersion Laser Doping for superconducting nanodevices by Chiodi, F., Grockowiak, A., Duvauchelle, J.E., Fossard, F., Lefloch, F., Klein, T., Marcenat, C., Débarre, D.

“…•Superconducting silicon can be grown epitaxially by Gas Immersion Laser Doping.•We have grown superconducting Si/metallic Si bilayers with sharp ohmic…”
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Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy by Kociniewski, T., Fossard, F., Boulmer, J., Bouchier, D.

“…Pulsed laser induced epitaxy (PLIE), based on melting/solidification processes induced by nanosecond laser pulses, is used to synthesize pseudomorphic Si 1 − x…”
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Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy by Monroy, E., Sarigiannidou, E., Fossard, F., Gogneau, N., Bellet-Amalric, E., Rouvière, J.-L., Monnoye, S., Mank, H., Daudin, B.

“…We have studied the surface kinetics of N-face GaN during molecular-beam epitaxial growth by investigating the Ga wetting and the surface morphology. In the…”
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Size effect on Ge nanowires growth kinetics by the vapor–liquid–solid mechanism by Renard, C., Boukhicha, R., Gardès, C., Fossard, F., Yam, V., Vincent, L., Bouchier, D., Hajjar, S., Bubendorff, J.L., Garreau, G., Pirri, C.

“…Germanium nanowires were grown on germanium (111) substrate by ultra high vacuum chemical vapor deposition, via the vapor–liquid–solid growth mechanism, using…”
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Gold anchoring on Si sawtooth faceted nanowires by Boukhicha, R, Gardès, C, Vincent, L, Renard, C, Yam, Vy, Fossard, F, Patriarche, G, Jabeen, F, Bouchier, D

“…This paper reports on the sawtooth faceting and the related gold coverage of silicon nanowires (NWs). ⟨ 111⟩-oriented Si NWs were grown on Si(111) substrates…”
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Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition by HALBWAX, M, RENARD, C, CAMMILLERI, D, YAM, V, FOSSARD, F, BOUCHIER, D, ZHENG, Y, RZEPKA, E

“…In this work, the growth of germanium by ultrahigh vacuum chemical vapor deposition on a 0.6nm thick SiO2 layer formed on Si(001) is investigated by in situ…”
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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy by Vincent, L., Fossard, F., Kociniewski, T., Largeau, L., Cherkashin, N., Hÿtch, M.J., Debarre, D., Sauvage, T., Claverie, A., Boulmer, J., Bouchier, D.

“…► Si1−xGex/Si pseudomorphic layers were synthesized by pulsed laser induced epitaxy. ► We performed strain and concentration measurements at the nanometer…”
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Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots by Gogneau, N., Fossard, F., Monroy, E., Monnoye, S., Mank, H., Daudin, B.

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Lateral epitaxial growth of germanium on silicon oxide by Cammilleri, V. D., Yam, V., Fossard, F., Renard, C., Bouchier, D., Fazzini, P. F., Ortolani, L., Houdellier, F., Hÿtch, M.

“…We have developed a method using local oxidation on silicon to create nanoscale silicon seeds for the lateral epitaxial overgrowth of germanium on silicon…”
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Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm by Moumanis, Kh, Helman, A., Fossard, F., Tchernycheva, M., Lusson, A., Julien, F. H., Damilano, B., Grandjean, N., Massies, J.

“…GaN/AlN quantum-dot superlattices grown by molecular-beam epitaxy on silicon (111) or sapphire (0001) substrate have been investigated using high-resolution…”
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Synthesis of multi-walled carbon nanotubes for NH3 gas detection by NGUYEN, L. H, PHI, T. V, PHAN, P. Q, VU, H. N, NGUYEN-DUC, C, FOSSARD, F

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Ge growth over thin SiO2 by UHV-CVD for MOSFET applications by RENARD, C, HALBWAX, M, CAMMILLERI, D, FOSSARD, F, YAM, V, BOUCHIER, D, ZHENG, Y

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