Search Results - "Fortuna, S.A."
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GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel
Published in IEEE electron device letters (01-06-2009)“…We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and…”
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Journal Article -
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GaAs FET with a high mobility self-assembled planar nanowire channel on a (100) substrate
Published in 2009 Device Research Conference (01-06-2009)“…We demonstrate for the first time, a metal-semiconductor field-effect transistor (MESFET) fabricated with a selfassembled and high mobility GaAs planar…”
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Conference Proceeding
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MOCVD Grown III-V Nanowires: In-Plane, self-aligned and transfer-printable
Published in LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (01-11-2008)“…We report here the controlled growth and characterization of self-aligned and in-plane GaAs nanowires grown on GaAs (100) substrates with metalorganic chemical…”
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Conference Proceeding -
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Self-aligned planar GaAs nanowires grown by MOCVD on GaAs (100) substrates
Published in 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science (01-05-2008)“…The growth of self-aligned planar GaAs nanowires on GaAs (100) substrates is demonstrated using Au-catalyzed metalorganic chemical vapor deposition (MOCVD)…”
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Conference Proceeding -
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GaAs ≪110≫ nanowires: Planar, self-aligned, twin-free, high-mobility and transfer-printable
Published in 2009 14th OptoElectronics and Communications Conference (01-07-2009)“…We present planar, self-aligned, twin-free, and high mobility GaAs semiconductor nanowires grown on (100) GaAs substrates. In addition, such planar nanowires…”
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Conference Proceeding