Search Results - "Forsberg, Urban"

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure by Chen, Jr-Tai, Forsberg, Urban, Janzén, Erik

“…High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon…”
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Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids by Lundskog, Anders, Forsberg, Urban, Holtz, Per Olof, Janzén, Erik

“…Morphological variations of gallium polar (0001)-oriented hexagonal GaN pyramids grown by hot-wall metal organic chemical vapor deposition under various growth…”
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Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process by Bergsten, Johan, Chen, Jr-Tai, Gustafsson, Sebastian, Malmros, Anna, Forsberg, Urban, Thorsell, Mattias, Janzen, Erik, Rorsman, Niklas

“…The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized…”
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Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures by Forsberg, Urban, Lundskog, A., Kakanakova-Georgieva, A., Ciechonski, R., Janzén, E.

“…The inherent advantages of the hot-wall metal organic chemical vapor deposition (MOCVD) reactor (low temperature gradients, less bowing of the wafer during…”
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Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC by Huang, Jing-Jia, Militzer, Christian, Wijayawardhana, Charles, Forsberg, Urban, Ojamäe, Lars, Pedersen, Henrik

“…Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor…”
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Conformal and superconformal chemical vapor deposition of silicon carbide coatings by Huang, Jing-Jia, Militzer, Christian, Wijayawardhana, Charles, Forsberg, Urban, Pedersen, Henrik

“…The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a low-temperature, low-pressure chemical vapor deposition (CVD)…”
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Growth of silicon carbide multilayers with varying preferred growth orientation by Huang, Jing-Jia, Militzer, Christian, Xu, Jinghao, Wijayawardhana, Charles A., Forsberg, Urban, Pedersen, Henrik

“…SiC multilayer coatings were deposited via thermal chemical vapor deposition (CVD) using silicon tetrachloride (SiCl 4 ) and various hydrocarbons under…”
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Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates by Li, Xun, Hemmingsson, Carl, Forsberg, Urban, Janzén, Erik, Pozina, Galia

“…•The AlGaN/GaN epilayers were grown on both Ga-face and N-face GaN substrates.•TRPL technique was used to compare the optical properties of the samples.•A…”
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Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition by Huang, Jing-Jia, Militzer, Christian, Wijayawardhana, Charles A., Forsberg, Urban, Pedersen, Henrik

“…In this work, silicon carbide (SiC) coatings were successfully grown by pulsed chemical vapor deposition (CVD). The precursors silicon tetrachloride (SiCl4)…”
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Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer by Gustafsson, Sebastian, Jr-Tai Chen, Bergsten, Johan, Forsberg, Urban, Thorsell, Mattias, Janzen, Erik, Rorsman, Niklas

“…Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper,…”
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Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power by Tengdelius, Lina, Greczynski, Grzegorz, Chubarov, Mikhail, Lu, Jun, Forsberg, Urban, Hultman, Lars, Janzén, Erik, Högberg, Hans

“…Zirconium diboride (ZrB2) thin films have been deposited on 4H-SiC(0001) substrates by direct current magnetron sputtering from a compound target. The effect…”
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Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure by Chen, Jr-Tai, Persson, Ingemar, Nilsson, Daniel, Hsu, Chih-Wei, Palisaitis, Justinas, Forsberg, Urban, Persson, Per O. Å., Janzén, Erik

“…A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was…”
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Impact of residual carbon on two-dimensional electron gas properties in Al x Ga 1−x N/GaN heterostructure by Chen, Jr-Tai, Forsberg, Urban, Janzén, Erik

“…High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon…”
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ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target by Tengdelius, Lina, Lu, Jun, Forsberg, Urban, Li, Xun, Hultman, Lars, Janzén, Erik, Högberg, Hans

“…ZrB2 films were deposited on 900°C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical…”
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Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100) by Tengdelius, Lina, Samuelsson, Mattias, Jensen, Jens, Lu, Jun, Hultman, Lars, Forsberg, Urban, Janzén, Erik, Högberg, Hans

“…ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at…”
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Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results by Li, X., Bergsten, J., Nilsson, D., Danielsson, Ö., Pedersen, H., Rorsman, N., Janzén, E., Forsberg, U.

“…The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path…”
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Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111) by Tengdelius, Lina, Birch, Jens, Lu, Jun, Hultman, Lars, Forsberg, Urban, Janzén, Erik, Högberg, Hans

“…Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H‐SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at a high…”
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Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface by Chen, Jr-Tai, Pomeroy, James W., Rorsman, Niklas, Xia, Chao, Virojanadara, Chariya, Forsberg, Urban, Kuball, Martin, Janzén, Erik

“…The crystalline quality of AlGaN/GaN heterostructures was improved by optimization of surface pretreatment of the SiC substrate in a hot-wall metal-organic…”
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ZrB 2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB 2 target by Tengdelius, Lina, Lu, Jun, Forsberg, Urban, Li, Xun, Hultman, Lars, Janzén, Erik, Högberg, Hans

“…ZrB 2 films were deposited on 900 °C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical…”
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Properties of GaN layers grown on N-face free-standing GaN substrates by Li, Xun, Hemmingsson, Carl, Forsberg, Urban, Janzén, Erik, Pozina, Galia

“…GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized…”
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