Search Results - "Forbes, David V."

Effect of vicinal substrates on the growth and device performance of quantum dot solar cells by Hubbard, Seth M., Podell, Adam, Mackos, Chelsea, Polly, Stephen, Bailey, Christopher G., Forbes, David V.

“…During quantum dot (QD) growth, substrate misorientation has been shown to play a role in the QD growth mechanism, changing their size, shape and density…”
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Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells by Bailey, Christopher G., Forbes, David V., Raffaelle, Ryne P., Hubbard, Seth M.

“…Ten-layer InAs/GaAs quantum dot (QD) solar cells exhibiting enhanced short circuit current ( J s c ) and open circuit voltage ( V o c ) comparable to a control…”
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Optical and electronic transport properties of epitaxial InGaAs and InAlAs in multilayer stacks by Mainali, Madan K., Subedi, Indra, Forbes, David V., Hubbard, Seth M., Podraza, Nikolas J.

“…The complex dielectric function ( ε  =  ε 1  +  iε 2 ) spectra of epitaxial In 0.53 Ga 0.47 As and In 0.52 Al 0.48 As in multilayer stacks were extracted by…”
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Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells by Driscoll, Kristina, Bennett, Mitchell F., Polly, Stephen J., Forbes, David V., Hubbard, Seth M.

“…The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in…”
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Characterization of quantum dot enhanced solar cells for concentrator photovoltaics by Hubbard, S.M., Bailey, C.G., Aguinaldo, R., Polly, S., Forbes, D.V., Raffaelle, R.P.

“…The addition of quantum dots (QDs) or quantum wells (QW) to a solar cell allows one to extend the absorption spectrum of the solar cell to match spectral…”
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Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence by Bailey, Christopher G., Hubbard, Seth M., Forbes, David V., Raffaelle, Ryne P.

“…The impact of strain-balancing quantum dot superlattice arrays is critical to device performance. InAs/GaAs/GaP strain-balanced quantum dot arrays embedded in…”
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Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells by Bennett, Mitchell F., Bittner, Zachary S., Forbes, David V., Rao Tatavarti, Sudersena, Phillip Ahrenkiel, S., Wibowo, Andree, Pan, Noren, Chern, Kevin, Hubbard, Seth M.

“…InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an…”
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Delta-Doping Effects on Quantum-Dot Solar Cells by Polly, Stephen J., Forbes, David V., Driscoll, Kristina, Hellstrom, Staffan, Hubbard, Seth M.

“…The effects of delta-doping InAs quantum-dot (QD)-enhanced GaAs solar cells were studied both through modeling and device experimentation. Delta doping of two,…”
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OMVPE of InAs quantum dots on an InGaP surface by Forbes, David V., Podell, A.M., Slocum, M.A., Polly, S.J., Hubbard, S.M.

“…The organometallic vapor phase epitaxy of InAs quantum dots has been investigated by comparing the effect the underlying surface has on the quantum dot…”
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Investigation of carrier escape mechanism in InAs/GaAs quantum dot solar cells by Yushuai Dai, Bailey, C. G., Kerestes, C., Forbes, D. V., Hubbard, S. M.

“…In order to enhance understanding of the short circuit improvement in InAs/GaAs quantum dot (QD) solar cells, the thermally assisted and tunneling mechanisms…”
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Effect of cell size on GaAs concentrators with InAs quantum dots by Polly, Stephen J, Harris, Michael L, Bittner, Zac, Plourde, Chelsea R, Bailey, Christopher G, Forbes, David V, Hubbard, Seth M

“…GaAs solar cells with varying layers of QDs and varying cell size (to vary perimeter to area ratio) were fabricated. Cells were tested using an I SC -V OC…”
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Optical properties of InP from infrared to vacuum ultraviolet studied by spectroscopic ellipsometry by Subedi, Indra, Slocum, Michael A., Forbes, David V., Hubbard, Seth M., Podraza, Nikolas J.

“…[Display omitted] •Complex dielectric function for InP evaluated from 0.038–8.5eV.•Urbach energy incorporated into optical property model.•Ten higher energies…”
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Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage by Bailey, Christopher G., Forbes, David V., Polly, Stephen J., Bittner, Zachary S., Dai, Yushuai, Mackos, Chelsea, Raffaelle, Ryne P., Hubbard, Seth M.

“…Ten-, 20-, and 40-layer InAs/GaAs quantum-dot (QD)-embedded superlattice solar cells were compared with a baseline GaAs p-i-n solar cell. Proper strain…”
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Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers by Esmaielpour, Hamidreza, Whiteside, Vincent R., Hirst, Louise C., Tischler, Joseph G., Ellis, Chase T., Lumb, Matthew P., Forbes, David V., Walters, Robert J., Sellers, Ian R.

“…An InGaAsP quantum well with a type‐II band alignment is studied using continuous wave power and temperature dependent photoluminescence (PL) spectroscopy. The…”
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Development of InAlAsSb growth by MOVPE by Slocum, Michael, Forbes, David V., Hillier, Glen C., Smith, Brittany L., Adams, Jessica G. J., Hubbard, Seth M.

“…Not provided…”
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Development of InAlAsSb growth by MOVPE by Slocum, Michael, Forbes, David V., Hillier, Glen C., Smith, Brittany L., Adams, Jessica G.J., Hubbard, Seth M.

“…•Evaluation of precursor, V/III and growth temperature effect on InAlAsSb growth.•Demonstration of InAlAsSb growth by MOVPE with Sb fraction exceeding…”
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Cover Image, Volume 25, Issue 8 by Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., Hubbard, Seth M.

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InAlAs photovoltaic cell design for high device efficiency by Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., Hubbard, Seth M.

“…This study presents a new design for a single‐junction InAlAs solar cell, which reduces parasitic absorption losses from the low band‐gap contact layer while…”
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Subbandgap current collection through the implementation of a doping superlattice solar cell by Slocum, Michael A., Forbes, David V., Hubbard, Seth M.

“…The simulation and fabrication of a multi-period GaAs n-type/intrinsic/p-type/intrinsic (nipi) doping superlattice solar cell have been demonstrated. Devices…”
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Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix: Special topical issue on Materials for Green Energy and the Environment by STRONG, Wyatt H, FORBES, David V, HUBBARD, Seth M

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