Search Results - "Fogel, K E"

Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates by Saenger, K. L., de Souza, J. P., Fogel, K. E., Ott, J. A., Reznicek, A., Sung, C. Y., Sadana, D. K., Yin, H.

“…We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an…”
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Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy by Saenger, K. L., Fogel, K. E., Ott, J. A., de Souza, J. P., Murray, C. E.

“…Striking nonuniformities are observed in the solid phase epitaxy (SPE) of blanket amorphized Si layers recrystallized in the presence of stress distributions…”
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Torwards marketable efficiency solution-processed kesterite and chalcopyrite photovoltaic devices by Mitzi, David B, Todorov, Teodor K, Gunawan, Oki, Min Yuan, Qing Cao, Wei Liu, Reuter, Kathleen B, Kuwahara, Masaru, Misumi, Kouichi, Kellock, Andrew J, Chey, S Jay, de Monsabert, Thomas Goislard, Prabhakar, Aparna, Deline, Vaughn, Fogel, K E

“…Although CuIn 1-x GaxSe 2-y S y (CIGS) chalcopyrite and Cu 2 ZnSn(S,Se) 4 (CZTSSe) kesterite-related films offer significant potential for low-cost…”
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Enhancement-Mode Buried-Channel \hbox \hbox\hbox\hbox\hbox MOSFETs With High- \kappa Gate Dielectrics by Sun, Yanning, Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J.-P., Sousa, M., Germann, R., Shiu, K. T., Forrest, S. R.

“…The operation of long- and short-channel enhancement-mode \hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As} -channel MOSFETs with high- \kappa gate dielectrics are…”
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Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48AsMOSFETs with high-κ gate dielectrics by YANNING SUN, KIEWRA, E. W, SOUSA, M, GERMANN, R, SHIU, K. T, FORREST, S. R, KOESTER, S. J, RUIZ, N, CALLEGARI, A, FOGEL, K. E, SADANA, D. K, FOMPEYRINE, J, WEBB, D. J, LOCQUET, J.-P

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High mobility III-V channel MOSFETs for post-Si CMOS applications by Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Bucchignano, J.J., Ruiz, N., Fogel, K.E., Sadana, D.K., Shahidi, G.G., Fompeyrine, J., Webb, D.J., Sousa, M., Marchiori, C., Germann, R., Shiu, K.T.

“…III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel…”
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Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3 by Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Fogel, K.E., Sadana, D.K.

“…In this paper, long-channel enhancement-mode In 0.70 Ga 0.30 As MOSFETs with ALD Al 2 O 3 is demonstrated. These devices show good output and pinch-off…”
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High-Performance hbox In 0.7 hbox Ga 0.3 hbox As -Channel MOSFETs With High- kappa Gate Dielectrics and alpha -Si Passivation by Sun, Y, Kiewra, E W, de Souza, JP, Bucchignano, J J, Fogel, KE, Sadana, D K, Shahidi, G G

“…Long and short buried-channel In sub(0.7)Ga sub(0.3)As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show…”
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Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics by Sun, Yanning, Koester, S. J., Kiewra, E. W., Fogel, K. E., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-p., Sousa, M., Germann, R.

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Intra-system interconnects for digital communications by Deutsch, A., Arjavalingam, G., Surovic, C.W., Lanzetta, A.P., Fogel, K.E., Doany, F., Ritter, M.

“…The electrical performance of three types of cables, namely coaxial, shielded ribbon and flexible-film is characterized for interconnection applications inside…”
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Enhancement-Mode Buried-Channel [Formula Omitted] MOSFETs With High- [Formula Omitted] Gate Dielectrics by Sun, Y, Kiewra, E.W, Koester, S.J, Ruiz, N, Callegari, A, Fogel, K.E, Sadana, D.K, Fompeyrine, J, Webb, D.J, Locquet, J.-P, Sousa, M, Germann, R, Shiu, K.T, rest, S.R

“…The operation of long- and short-channel enhancement-mode In sub(0.7)Ga sub(0.3)As-channel MOSFETs with high-k gate dielectrics are demonstrated for the first…”
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300 mm SGOI/strain-Si for high-performance CMOS by Reznicek, A., Bedell, S.W., Hovel, H.J., Fogel, K.E., Ott, J.A., Mitchell, R., Sadana, D.K.

“…In this article, a manufacturable material technology has been developed to produce highly uniform 300 mm SSOI substrates. The focus of this work has been on…”
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