Search Results - "Fogarty, T. N."
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dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Published in Applied physics letters (01-10-2001)“…AlGaN/GaN high electron mobility transistors (HEMTs) with a range of gate lengths (0.8–1.2 μm) and widths (100–200 μm) were exposed to 40 MeV protons at…”
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Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes
Published in Physica status solidi. A, Applied research (01-09-2004)“…Bulk ZnO Schottky rectifiers with Pt rectifying contacts were exposed to 40 MeV protons at fluences from 5 × 109 to 5 × 1010 cm–2. These doses correspond to…”
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Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process
Published in IEEE transactions on nuclear science (01-12-2001)“…We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon…”
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Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface
Published in Applied physics letters (12-11-2001)“…We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation…”
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Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes
Published in Journal of electronic materials (01-04-2007)“…Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 X…”
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Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes
Published in Applied physics letters (11-10-2004)“…InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525 nm were irradiated with 40 MeV…”
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High energy proton irradiation effects on SiC Schottky rectifiers
Published in Applied physics letters (23-09-2002)“…4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107–5×109 cm−2. The reverse breakdown…”
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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
Published in Journal of electronic materials (01-05-2002)“…AlGaN/GaN high-electron mobility transistors (HEMTs) show decreases in extrinsic transconductance, drain-source current threshold voltage, and gate current as…”
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Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
Published in Applied physics letters (03-03-2003)“…Sc 2 O 3 -passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10…”
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Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes
Published in Applied physics letters (11-10-2004)“…InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525nm were irradiated with 40MeV…”
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Journal Article -
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A nuclear fragmentation energy deposition model
Published in IEEE transactions on nuclear science (01-02-1991)“…A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. A nuclear database is recommended that…”
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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
Published in Solid-state electronics (01-06-2003)Get full text
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Single event upset and total dose radiation effects on rad-hard SRAMs
Published in Journal of electronic materials (01-07-1990)Get full text
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Application of radiation sources to simulate the radiation environment in low earth orbit: results on optoelectronic devices for International Space Station
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (1999)“…There is a trend toward evaluating the space worthiness of electronic devices under conditions that simulate the intended operating environment of the…”
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Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two-dimensional electron gas transistors
Published in IEEE transactions on nuclear science (01-12-1999)“…The radiation tolerance of two quantum devices, InP-based resonant tunneling diodes (RTD) and GaAs based two-dimensional electron gas transistors (2-DEGT), was…”
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High-energy proton irradiation effects on AIGaN/GaN high-electron mobility transistors
Published in Journal of electronic materials (01-05-2002)Get full text
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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors : III-V Nitrides and Silicon Carbide
Published in Journal of electronic materials (2002)Get full text
Conference Proceeding -
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Observation of changes in the single event upset rate in 4MB SRAM due to intervening materials in a neutron environment
Published in RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) (2001)“…We observe a significant increase (by a factor of approximately three) in the single event upset (SEU) rate in 4MB SRAM by modifying the incident high-energy…”
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Conference Proceeding -
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Defects produced by medium energy proton bombardment of MOS devices
Published in RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) (2001)“…We report results of very sensitive electron spin resonance (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We…”
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Conference Proceeding