Search Results - "Fogarty, T. N."

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  1. 1

    dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors by Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Baca, A. G.

    Published in Applied physics letters (01-10-2001)
    “…AlGaN/GaN high electron mobility transistors (HEMTs) with a range of gate lengths (0.8–1.2 μm) and widths (100–200 μm) were exposed to 40 MeV protons at…”
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    Journal Article
  2. 2

    Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes by Khanna, Rohit, Ip, K., Allums, K. K., Baik, K., Abernathy, C. R., Pearton, S. J., Heo, Y. W., Norton, D. P., Ren, F., Dwivedi, R., Fogarty, T. N., Wilkins, R.

    Published in Physica status solidi. A, Applied research (01-09-2004)
    “…Bulk ZnO Schottky rectifiers with Pt rectifying contacts were exposed to 40 MeV protons at fluences from 5 × 109 to 5 × 1010 cm–2. These doses correspond to…”
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    Journal Article
  3. 3

    Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process by Lenahan, P.M., Mishima, T.D., Jumper, J., Fogarty, T.N., Wilkins, R.T.

    Published in IEEE transactions on nuclear science (01-12-2001)
    “…We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon…”
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    Journal Article
  4. 4

    Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface by Lenahan, P. M., Mishima, T. D., Fogarty, T. N., Wilkins, R.

    Published in Applied physics letters (12-11-2001)
    “…We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation…”
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    Journal Article
  5. 5

    Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes by Allums, K.K., Hlad, M., Gerger, A.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F., Dwivedi, R., Fogarty, T.N., Wilkins, R.

    Published in Journal of electronic materials (01-04-2007)
    “…Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 X…”
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    Journal Article
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    High energy proton irradiation effects on SiC Schottky rectifiers by Nigam, S., Kim, Jihyun, Ren, F., Chung, G. Y., MacMillan, M. F., Dwivedi, R., Fogarty, T. N., Wilkins, R., Allums, K. K., Abernathy, C. R., Pearton, S. J., Williams, J. R.

    Published in Applied physics letters (23-09-2002)
    “…4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107–5×109 cm−2. The reverse breakdown…”
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    Journal Article
  8. 8

    High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors by Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Baca, A. G.

    Published in Journal of electronic materials (01-05-2002)
    “…AlGaN/GaN high-electron mobility transistors (HEMTs) show decreases in extrinsic transconductance, drain-source current threshold voltage, and gate current as…”
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    Journal Article
  9. 9

    Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Kim, Jihyun, Ren, F., Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R.

    Published in Applied physics letters (03-03-2003)
    “…Sc 2 O 3 -passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10…”
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    Journal Article
  10. 10

    Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes by Khanna, Rohit, Allums, K. K., Abernathy, C. R., Pearton, S. J., Kim, Jihyun, Ren, F., Dwivedi, R., Fogarty, T. N., Wilkins, R.

    Published in Applied physics letters (11-10-2004)
    “…InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525nm were irradiated with 40MeV…”
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    Journal Article
  11. 11

    A nuclear fragmentation energy deposition model by Ngo, D.M., Wilson, J.W., Forgarty, T.N., Buck, W.W.

    Published in IEEE transactions on nuclear science (01-02-1991)
    “…A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. A nuclear database is recommended that…”
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    Journal Article
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    Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two-dimensional electron gas transistors by Wilkins, R., Shojah-Ardalan, S., Kirk, W.P., Spencer, G.F., Bate, R.T., Seabaugh, A.C., Lake, R., Stelmaszyk, P., Wieck, A.D., Fogarty, T.N.

    Published in IEEE transactions on nuclear science (01-12-1999)
    “…The radiation tolerance of two quantum devices, InP-based resonant tunneling diodes (RTD) and GaAs based two-dimensional electron gas transistors (2-DEGT), was…”
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    Journal Article
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    Observation of changes in the single event upset rate in 4MB SRAM due to intervening materials in a neutron environment by Wilkins, R., Huff, H., Badhwar, G.D., Moore, J., Zhou, J., Singleterry, R.C., Wender, S.A., Fogarty, T.N.

    “…We observe a significant increase (by a factor of approximately three) in the single event upset (SEU) rate in 4MB SRAM by modifying the incident high-energy…”
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    Conference Proceeding
  20. 20

    Defects produced by medium energy proton bombardment of MOS devices by Lenahan, P.M., Mishima, T.D., Jumper, J.B., Fogarty, T.N., Marrero, M., Cruz, L., Shojah-Ardalan, S., Dwivedi, R., Wilkins, R., Trombetta, L.P., Singh, C.

    “…We report results of very sensitive electron spin resonance (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We…”
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    Conference Proceeding