Search Results - "Fluckiger, Ralf"

A 16-GHz Bandwidth Cryogenic IF Amplifier With 4-K Noise Temperature for Sub-mm Radio-Astronomy Receivers by Lopez-Fernandez, Isaac, Gallego-Puyol, Juan Daniel, Diez, Carmen, Malo-Gomez, Inmaculada, Amils, Ricardo Ignacio, Fluckiger, Ralf, Marti, Diego, Hesper, Ronald

“…The major mm and sub-mm radio-astronomy observatories are prioritizing instantaneous bandwidth widening for their current or planned upgrades this decade. We…”
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InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process by Fluckiger, R., Lovblom, R., Ostinelli, O., Benedickter, H., Bolognesi, C. R.

“…We demonstrate InP/GaAsSb/InP double heterojunction bipolar transistors (HBTs) fabricated in a low-temperature planarization process based on a spin-on Teflon…”
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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz by Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Fluckiger, Ralf, Marti, Diego, Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.

“…We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the…”
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A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques by Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

“…A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency…”
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Accuracy of Microwave Transistor f and f Extractions by Teppati, Valeria, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Bolognesi, C. R.

“…We present a complete methodology to evaluate the accuracy of the microwave transistor figures-of-merit f T (current gain cutoff frequency) and f MAX (maximum…”
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Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters by Lovblom, Rickard, Fluckiger, Ralf, Ostinelli, Olivier, Alexandrova, Maria, Bolognesi, C. R.

“…Recombination effects in GaAsSb-based double-heterojunction bipolar transistors featuring AlInP and GaInP emitters are investigated. AlInP emitters provide a…”
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Uniform-Base InP/GaInAsSb DHBTs Exhibiting f/f>635/420 by Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

“…Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with f MAX =636 GHz and a simultaneous f T =424 GHz were realized with a…”
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InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency by Lövblom, R, Flückiger, R, Yuping Zeng, Ostinelli, O, Alt, A R, Benedickter, H, Bolognesi, C R

“…We report the realization of 0.3-μm emitter InP/GaAsSb/InP DHBTs with cutoff frequencies f T = 365 GHz and f MAX = 501 GHz. Our devices were implemented with a…”
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Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) by Bolognesi, Colombo R, Quan, Wei, Arabhavi, Akshay M, Saranovac, Tamara, Flückiger, Ralf, Ostinelli, Olivier, Wen, Xin, Luisier, Mathieu

“…Double heterojunction bipolar transistors (DHBTs) are intended to extend the breakdown voltage beyond what is possible in single heterojunction bipolar…”
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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz by Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

“…We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record <inline-formula> <tex-math…”
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Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes by Arabhavi, Akshay M., Chaudhary, Rimjhim, Fluckiger, Ralf, Marti, Diego, Hamzeloui, Sara, Ciabattini, Filippo, Quan, Wei, Leich, Martin, Ostinelli, Olivier, Bolognesi, C. R.

“…We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb uniform and graded (composition and doping)…”
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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz by Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

“…[Formula Omitted] larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance…”
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Quaternary Graded-Base InP/GaInAsSb DHBTs With } / } = 547/784 GHz by Quan, Wei, Arabhavi, Akshay M., Fluckiger, Ralf, Ostinelli, Olivier, Bolognesi, C. R.

“…We report a "Type-II" metal-organic chemical vapor deposition (MOCVD)-grown compositionally graded quaternary base InP/GaInAsSb/InP double heterojunction…”
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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm 2 Power Density at 94 GHz by Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Fluckiger, Ralf, Marti, Diego, Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.

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Accuracy of Microwave Transistor [Formula Omitted] and [Formula Omitted] Extractions by Teppati, Valeria, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Bolognesi, C. R

“…We present a complete methodology to evaluate the accuracy of the microwave transistor figures-of-merit [Formula Omitted] (current gain cutoff frequency) and…”
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Uniform-Base InP/GaInAsSb DHBTs Exhibiting [Formula Omitted] by Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C R

“…Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with [Formula Omitted] and a simultaneous [Formula Omitted] were realized with a…”
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InP/GaAsSb DHBTs With Simultaneous f/f=428/621 by Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

“…Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an f MAX of 621 GHz and a simultaneous f T of 428 GHz are demonstrated. A DC peak…”
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A [Formula Omitted]-Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques by Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R

“…A new [Formula Omitted]-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop…”
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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications by Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd

“…This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status…”
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Dual Gate HEMT: Compact Cascode for Low-Noise Amplification by Bonomo, Giorgio, Ciabattini, Filippo, Saranovac, Tamara, Kostelac, Fran, Hamzeloui, Sara, Marti, Diego, Fluckizer, Ralf, Ostinelli, Olivier J. S., Bolognesi, Colombo R.

“…The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise amplification perspective. Experimental results, obtained through RF and…”
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