Search Results - "Flucke, J."

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    Direct parameter-extraction method for laser diode rate-equation model by Jianjun Gao, Xiuping Li, Flucke, J., Boeck, G.

    Published in Journal of lightwave technology (01-06-2004)
    “…A new direct extraction method to determine the small-signal and rate-equation model parameters for laser diode is presented in this paper. This method differs…”
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    Journal Article
  3. 3

    Switch-mode amplifier ICs with over 90% efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs by Meliani, C., Flucke, J., Wentzel, A., Wurfl, J., Heinrich, W., Trankle, G.

    “…This paper reports on design and realization of monolithic switch-mode amplifiers for data rates up to 1.8 Gbps, suitable for Class-S and inverse class-D PA…”
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    Conference Proceeding
  4. 4

    Efficiency of praziquantel, a new cesticide, against Taenia hydatigena in the dog by Baldock, F C, Flucke, W J, Hopkins, T J

    Published in Research in veterinary science (01-09-1977)
    “…Praziquantel (2 - cyclohexylcarbonyl - 1,3,4,6,7,11b - hexahydro - 2H - pyrazino (2,1 - a) isoquinolin - 4 - one) was tested against artificially established…”
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    Journal Article
  5. 5

    Design and Realization of an Output Network for a GaN-HEMT Current-Mode Class-S Power Amplifier at 450MHz by Wentzel, A., Meliani, C., Flucke, J., Ersoy, E., Heinrich, W.

    Published in 2009 German Microwave Conference (01-03-2009)
    “…This paper describes the design and realization of a hybrid lumped output network for a current-mode class-S power amplifier. It consist of a band pass filter,…”
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    Conference Proceeding
  6. 6

    An accurate package model for 60W GaN power transistors by Flucke, J., Schmuckle, F.-J., Heinrich, W., Rudolph, M.

    “…This paper reports on a straightforward yet highly accurate approach to determine a package model for microwave power transistors. The model is based on a…”
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    Conference Proceeding
  7. 7

    Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs by Flucke, J., Meliani, C., Schnieder, F., Heinrich, W.

    “…This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm…”
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    Conference Proceeding
  8. 8

    Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs by Flucke, J., Meliani, C., Schnieder, F., Heinrich, W.

    Published in 2007 European Microwave Conference (01-10-2007)
    “…This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm…”
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    Conference Proceeding