Search Results - "Flemish, J. R."

Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress by Downey, B. P., Mohney, S. E., Flemish, J. R.

“…The enhanced stability of Pd/Ti contacts to p -type SiC under high-current-density continuous direct-current (DC) stressing is investigated and compared with…”
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Current-Induced Degradation of Nickel Ohmic Contacts to SiC by Downey, B.P., Flemish, J.R., Liu, B.Z., Clark, T.E., Mohney, S.E.

“…The stability of Ni ohmic contacts to p -type SiC under high current density was investigated. A test structure adapted from the four circular contacts method…”
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Raman study of low growth temperature GaAs by GANT, T. A, SHEN, H, FLEMISH, J. R, FOTIADIS, L, DUTTA, M

“…A Raman study has been made of GaAs grown by MBE at low temperature, which is known to produce nonstoichiometric (As-rich) material. The epilayer has a…”
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High etch rates of SiC in magnetron enhanced SF6 plasmas by McLane, G. F., Flemish, J. R.

“…Magnetron enhanced reactive ion etching of SiC has been investigated in SF6 plasmas. Etch rate was determined as a function of cathode power density (0.1–0.5…”
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Smooth etching of single crystal 6H-SiC in an electron cyclotron resonance plasma reactor by Flemish, J. R., Xie, K., Zhao, J. H.

“…Single-crystal 6H-SiC has been etched using a CF4/O2 gas mixture in an electron cyclotron resonance (ECR) plasma reactor. ECR etching results in SiC surfaces…”
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Low damage and residue-free dry etching of 6H–SiC using electron cyclotron resonance plasma by Xie, K., Flemish, J. R., Zhao, J. H., Buchwald, W. R., Casas, L.

“…Dry etching-induced surface damage and contamination on SiC have been investigated for electron cyclotron resonance (ECR) plasma etching and conventional…”
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A high-current and high-temperature 6H-SiC thyristor by Xie, K., Zhao, J.H., Flemish, J.R., Burke, T., Buchwald, W.R., Lorenzo, G., Singh, H.

“…A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm/sup 2/…”
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Optimization of a Photonically Controlled Microwave Switch and Attenuator by Flemish, J R, Haupt, R L

“…A silicon-based photoconductive switch and attenuator for microwave signals has been demonstrated and optimized for low insertion loss and high attenuation…”
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Phosphorus incorporation in plasma deposited diamond films by Schauer, S. N., Flemish, J. R., Wittstruck, R., Landstrass, M. I., Plano, M. A.

“…Phosphorus-doped polycrystalline and homoepitaxial diamond films were grown using both microwave and dc plasma assisted chemical vapor deposition. P…”
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Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress: Group III Nitrides, SiC and ZnO by DOWNEY, B. P, MOHNEY, S. E, FLEMISH, J. R

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Comparison of OMVPE and MBE grown AlGaAs/InGaAs PHEMT structures by LAREAU, R. T, JONES, K. A, MONAHAN, T, FLEMISH, J. R, PFEFFER, R. L, SHERRIFF, R. E, LITTON, C. W, JONES, R, STUTZ, C. E, LOOK, D. C

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High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot-wall reactor by BAN, V. S, RODEFELD, D, FLEMISH, J. R, JONES, K. A

“…A new method which combines features of organometallic vapor phase epitaxy (VPE) with hydride VPE has been demonstrated for the epitaxial growth of InP. In…”
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Comparison of OMVPE grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures by JONES, K. A, LAREAU, R. T, NONAHAN, T, FLEMISH, J. R, PFEFFER, R. L, SHERRIFF, R. E, LITTON, C. W, JONES, R. L, STUTZ, C. E, LOOK, D. C

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Effects of annealing conditions on heavily carbon-doped InGaAs by HAN, W. Y, CALDERON, L, LU, Y, SCHAUER, S. N, MOERKIRK, R. P, LEE, H. S, FLEMISH, J. R, JONES, K. A, YANG, L. W

“…Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps…”
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Current-Induced Degradation of Nickel Ohmic Contacts to SiC: Group III Nitrides, SiC, and ZnO by DOWNEY, B. P, FLEMISH, J. R, LIU, B. Z, CLARK, T. E, MOHNEY, S. E

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Switching characteristics of a high-temperature 6H-SiC thyristor by Xie, K., Buchwald, W.R., Zhao, J.H., Flemish, J.R., Burke, T., Kingsley, L., Weiner, M., Singh, H.

“…Two different 6H-SiC thyristors, one with a 6.5 /spl mu/m n-type blocking layer and the other with a 8 /spl mu/m p-type blocking layer have been fabricated and…”
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