Search Results - "Fitsych, E. I."

Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films by Izhnin, I. I., Fitsych, E. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Bonchyk, A. Yu, Savytskyy, H. V., Świątek, Z.

“…Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te ( x = 0.22) films grown by molecular-beam epitaxy are…”
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Defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., Mynbaev, K. D.

“…Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd x Hg 1 − x Te films…”
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Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Mynbaev, K. D., Bazhenov, N. L., Fitsych, E. I., Yakushev, M. V., Mikhailov, N. N., Varavin, V. S., Dvoretsky, S. A.

“…The photoluminescence (PL) of CdHgTe solid solutions subjected to low-energy ion treatment is studied. A blue shift of the peaks in the PL spectra is observed…”
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Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., Mynbaev, K. D.

“…Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te…”
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Size effects in [N(CH3)4]2Zn0.58Cu0.42Cl4 crystals by Sveleba, S. A., Karpa, I. V., Katerynchuk, I. N., Furgala, Yu. M., Semotyuk, O. V., Kunyo, I. M., Fitsych, E. I., Pankivskyi, Yu. I.

“…The temperature dependences of birefringence in thin [N(CH 3 ) 4 ] 2 Zn 0.58 Cu 0.42 Cl 4 crystals in the thickness range 20 × 10 −6 ≤ d ≤ 500 ↾ 10 −6 m have…”
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Defect structure of Cd x Hg1 − x Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., Mynbaev, K. D.

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Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy by Świątek, Z., Ozga, P., Izhnin, I. I., Fitsych, E. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Bonchyk, A. Yu, Savytsky, H. V.

“…Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of…”
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Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions by Izhnin, I. I., Savitskii, G. V., Fitsych, E. I., Dvoretsky, S. A., Mikhailov, N. N., Varavin, V. S., Mynbaev, K. D.

“…We have studied the relaxation of electrical properties in radiation-damaged layers formed during ion-beam milling (IBM) of cadmium mercury telluride (CdHgTe)…”
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Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates by Izhnin, I. I., Mynbaev, K. D., Yakushev, M. V., Izhnin, A. I., Fitsych, E. I., Bazhenov, N. L., Shilyaev, A. V., Savitskyy, H. V., Jakiela, R., Sorochkin, A. V., Varavin, V. S., Dvoretsky, S. A.

“…The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of…”
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