Search Results - "Fioretti, Angela"

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  1. 1

    Defect Tolerant Semiconductors for Solar Energy Conversion by Zakutayev, Andriy, Caskey, Christopher M, Fioretti, Angela N, Ginley, David S, Vidal, Julien, Stevanovic, Vladan, Tea, Eric, Lany, Stephan

    Published in The journal of physical chemistry letters (03-04-2014)
    “…Defect tolerance is the tendency of a semiconductor to keep its properties despite the presence of crystallographic defects. Scientific understanding of the…”
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    Journal Article
  2. 2

    Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells by Woods-Robinson, Rachel, Fioretti, Angela N., Haschke, Jan, Boccard, Mathieu, Persson, Kristin A., Ballif, Christophe

    Published in IEEE journal of photovoltaics (01-03-2021)
    “…Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but…”
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    Journal Article
  3. 3

    Low-Temperature p-Type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells by Fioretti, Angela N., Boccard, Mathieu, Monnard, Raphael, Ballif, Christophe

    Published in IEEE journal of photovoltaics (01-09-2019)
    “…Silicon heterojunction (SHJ) solar cells have reached record efficiency, particularly in all-back contacted architectures. Despite this, two-side contacted SHJ…”
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    Journal Article
  4. 4

    Linking simulation and synthesis of nickel oxide hole-selective contacts for silicon heterojunction solar cells by Woods-Robinson, Rachel, Fioretti, Angela N., Haschke, Jan, Boccard, Mathieu, Persson, Kristin A., Ballif, Christophe

    “…In silicon heterojunction (SHJ) solar cells, one factor limiting efficiency is "parasitic absorption" from amorphous silicon (a-Si) at the front surface. Thus,…”
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    Conference Proceeding
  5. 5

    Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells by Fioretti, Angela N., Chang Chien, Tzu-Chin, Xiao, Yashi, Ballif, Christophe, Boccard, Mathieu

    “…Carrier-selective, passivating contacts have allowed silicon heterojunction (SHJ) cells to reach record-breaking efficiencies particularly in…”
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    Conference Proceeding
  6. 6

    The value of diversity in the renewable energy industry and research community by Warren, Emily L., Anctil, Annick, Ayala, Silvana, Berry, Joseph J., McMillon-Brown, Lyndsey, Fioretti, Angela N., Grassman, Tyler J., Mikofski, Mark A., Perna, Allison, Smith, Brittany L.

    “…Part of creating a successful solar industry is developing a capable workforce. It has been repeatedly shown that organizations and companies are more…”
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    Conference Proceeding
  7. 7

    Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors by Fioretti, Angela N., Stokes, Adam, Young, Matthew R., Gorman, Brian, Toberer, Eric S., Tamboli, Adele C., Zakutayev, Andriy

    Published in Advanced electronic materials (01-03-2017)
    “…Enhanced acceptor activation is achieved in the ternary nitride semiconductor ZnSnN2. Hydrogen passivation of acceptors during growth, coupled with post‐growth…”
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    Journal Article
  8. 8

    Effects of low temperature annealing on the transport properties of zinc tin nitride by Fioretti, Angela N., Toberer, Eric S., Zakutayev, Andriy, Tamboli, Adele C.

    “…ZnSnN 2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1…”
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    Conference Proceeding
  9. 9

    Low-Temperature [Formula Omitted]-Type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells by Fioretti, Angela N, Boccard, Mathieu, Monnard, Raphael, Ballif, Christophe

    Published in IEEE journal of photovoltaics (01-01-2019)
    “…Silicon heterojunction (SHJ) solar cells have reached record efficiency, particularly in all-back contacted architectures. Despite this, two-side contacted SHJ…”
    Get full text
    Journal Article
  10. 10

    Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells by Woods-Robinson, Rachel, Fioretti, Angela N., Haschke, Jan, Boccard, Mathieu, Persson, Kristin A., Ballif, Christophe

    Published in IEEE journal of photovoltaics (21-12-2020)
    “…Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but…”
    Get full text
    Journal Article
  11. 11

    Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN2-Based Solar Cells by Arca, Elisabetta, Fioretti, Angela, Lany, Stephan, Tamboli, Adele C., Teeter, Glenn, Melamed, Celeste, Jie Pan, Wood, Kevin N., Toberer, Eric, Zakutayev, Andriy

    Published in IEEE journal of photovoltaics (01-01-2018)
    “…ZnSnN 2 (ZTN) has been proposed as a new earth abundant absorber material for photovoltaic (PV) applications. While carrier concentration has been reduced to…”
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    Journal Article
  12. 12
  13. 13

    Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN2-Based Solar Cells by Arca, Elisabetta, Fioretti, Angela, Lany, Stephan, Tamboli, Adele C., Teeter, Glenn, Melamed, Celeste, Pan, Jie, Wood, Kevin N., Toberer, Eric, Zakutayev, Andriy

    Published in IEEE journal of photovoltaics (07-12-2017)
    “…ZnSnN2 (ZTN) has been proposed as a new earth abundant absorber material for PV applications. While carrier concentration has been reduced to values suitable…”
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    Journal Article
  14. 14

    Development of Zinc Tin Nitride for Application as an Earth Abundant Photovoltaic Absorber by Fioretti, Angela N

    Published 01-01-2017
    “…In recent years, many new potential absorber materials based on earth-abundant and non-toxic elements have been predicted. These materials, often made in thin…”
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    Dissertation
  15. 15

    Solar Cells: Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors (Adv. Electron. Mater. 3/2017) by Fioretti, Angela N., Stokes, Adam, Young, Matthew R., Gorman, Brian, Toberer, Eric S., Tamboli, Adele C., Zakutayev, Andriy

    Published in Advanced electronic materials (01-03-2017)
    “…Enhanced acceptor activation in the ternary semiconductor zinc tin nitride has been achieved by researchers from the National Renewable Energy Laboratory and…”
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    Journal Article
  16. 16
  17. 17

    Effects of Low Temperature Annealing on the Transport Properties of Zinc Tin Nitride by Fioretti, Angela N, Toberer, Eric S, Zakutayev, Andriy, Tamboli, Adele C

    Published 25-06-2015
    “…ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1…”
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    Journal Article
  18. 18

    Combinatorial Insights into Doping Control and Transport Properties of Zinc Tin Nitride by Fioretti, Angela N, Zakutayev, Andriy, Moutinho, Helio, Melamed, Celeste, Perkins, John D, Norman, Andrew G, Al-Jassim, Mowafak, Toberer, Eric S, Tamboli, Adele C

    Published 26-05-2015
    “…ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and…”
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    Journal Article
  19. 19

    Understanding and Control of Bipolar Doping in Copper Nitride by Fioretti, Angela N, Schwartz, Craig P, Vinson, John, Nordlund, Dennis, Prendergast, David, Tamboli, Adele C, Caskey, Christopher M, Tuomisto, Filip, Linez, Florence, Christensen, Steven T, Toberer, Eric S, Lany, Stephan, Zakutayev, Andriy

    Published 13-01-2016
    “…Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is…”
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    Journal Article