Search Results - "Fioretti, Angela"
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Defect Tolerant Semiconductors for Solar Energy Conversion
Published in The journal of physical chemistry letters (03-04-2014)“…Defect tolerance is the tendency of a semiconductor to keep its properties despite the presence of crystallographic defects. Scientific understanding of the…”
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Journal Article -
2
Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells
Published in IEEE journal of photovoltaics (01-03-2021)“…Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but…”
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Journal Article -
3
Low-Temperature p-Type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells
Published in IEEE journal of photovoltaics (01-09-2019)“…Silicon heterojunction (SHJ) solar cells have reached record efficiency, particularly in all-back contacted architectures. Despite this, two-side contacted SHJ…”
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Journal Article -
4
Linking simulation and synthesis of nickel oxide hole-selective contacts for silicon heterojunction solar cells
Published in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (14-06-2020)“…In silicon heterojunction (SHJ) solar cells, one factor limiting efficiency is "parasitic absorption" from amorphous silicon (a-Si) at the front surface. Thus,…”
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Conference Proceeding -
5
Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells
Published in 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (01-06-2019)“…Carrier-selective, passivating contacts have allowed silicon heterojunction (SHJ) cells to reach record-breaking efficiencies particularly in…”
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Conference Proceeding -
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The value of diversity in the renewable energy industry and research community
Published in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (14-06-2020)“…Part of creating a successful solar industry is developing a capable workforce. It has been repeatedly shown that organizations and companies are more…”
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Conference Proceeding -
7
Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors
Published in Advanced electronic materials (01-03-2017)“…Enhanced acceptor activation is achieved in the ternary nitride semiconductor ZnSnN2. Hydrogen passivation of acceptors during growth, coupled with post‐growth…”
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Journal Article -
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Effects of low temperature annealing on the transport properties of zinc tin nitride
Published in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) (01-06-2015)“…ZnSnN 2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1…”
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Conference Proceeding -
9
Low-Temperature [Formula Omitted]-Type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells
Published in IEEE journal of photovoltaics (01-01-2019)“…Silicon heterojunction (SHJ) solar cells have reached record efficiency, particularly in all-back contacted architectures. Despite this, two-side contacted SHJ…”
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Journal Article -
10
Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells
Published in IEEE journal of photovoltaics (21-12-2020)“…Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but…”
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Journal Article -
11
Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN2-Based Solar Cells
Published in IEEE journal of photovoltaics (01-01-2018)“…ZnSnN 2 (ZTN) has been proposed as a new earth abundant absorber material for photovoltaic (PV) applications. While carrier concentration has been reduced to…”
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Journal Article -
12
Effects of low temperature annealing on the transport properties of zinc tin nitride
Published in Conference record of the IEEE Photovoltaic Specialists Conference (01-06-2015)Get full text
Journal Article -
13
Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN2-Based Solar Cells
Published in IEEE journal of photovoltaics (07-12-2017)“…ZnSnN2 (ZTN) has been proposed as a new earth abundant absorber material for PV applications. While carrier concentration has been reduced to values suitable…”
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Journal Article -
14
Development of Zinc Tin Nitride for Application as an Earth Abundant Photovoltaic Absorber
Published 01-01-2017“…In recent years, many new potential absorber materials based on earth-abundant and non-toxic elements have been predicted. These materials, often made in thin…”
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Dissertation -
15
Solar Cells: Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors (Adv. Electron. Mater. 3/2017)
Published in Advanced electronic materials (01-03-2017)“…Enhanced acceptor activation in the ternary semiconductor zinc tin nitride has been achieved by researchers from the National Renewable Energy Laboratory and…”
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Journal Article -
16
Paths for maximal light incoupling and excellent electrical performances in silicon heterojunction solar cells
Published in 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (01-06-2019)“…We discuss here optical losses in silicon heterojunction solar cells and strategies to minimize them. Optical losses originate from most…”
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Conference Proceeding -
17
Effects of Low Temperature Annealing on the Transport Properties of Zinc Tin Nitride
Published 25-06-2015“…ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1…”
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Journal Article -
18
Combinatorial Insights into Doping Control and Transport Properties of Zinc Tin Nitride
Published 26-05-2015“…ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and…”
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Journal Article -
19
Understanding and Control of Bipolar Doping in Copper Nitride
Published 13-01-2016“…Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is…”
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Journal Article