Search Results - "Fifth Annual Symposium on the Physics of Failure in Electronics"

Opening address by Walsh, John B.

“…Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the…”
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Degradation of GaAs Diode Lasers by Minden, H. T.

“…Gallium arsenide diode lasers degrade when too high a current density is passed through them. The degradation consists of a decrease in output optical power,…”
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Preface

“…Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the…”
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The Failure of Thin Alluminum Current-Carrying Strips on Oxidized Silicon by Blech, Ilan A., Sello, Harry

“…A new mode of metal failures is described - electrical opens in Al strips on SiO2 - resulting from the passage of direct current at high current density. The…”
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Optical Scanning Techniques for Semiconductor Device Screening and Identification of Surface and Junction Phenomena by Potter, C. N., Sawyer, D. E.

“…The electrical response of semiconductor devices to light can be used to study various device phenomena and to identify the causes of anomalous device…”
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Photoresponse Mapping of Semiconductors by Haberer, J. R.

“…Much work has been done investigating the effect of light on various semiconductor characteristics. An improved method for obtaining photoresponse measurements…”
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The Interaction of Oxygen with Clean Chromium Films and its Influence on the Electrical Film Properties by Crossland, W. A., Roettgers, H. T.

“…An outline is given of an approach to the investigation of ageing mechanisms in thin film resistors. The programme includes the separation of most of the…”
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Microbonds for Hybrid Microcircuits by Riben, A. R., Sherman, S. L., Land, W. V., Geisler, R.

“…This paper presents the results of an extensive micro bonding program designed to establish the reliability of techniques for providing interconnections within…”
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The Oxide-Silicon Interface by Donovan, R. P.

“…Oxidized silicon surfaces are used on virtually all of today's integrated circuits and silicon devices. These oxide layers encase the silicon surface in a…”
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Studies of the Uniformity of Avalanche Breakdown by Means of Low Frequency Noise Measurements by Haitz, Roland H.

“…The correlation between low frequency noise and the uniformity of the current distribution in avalanche diodes is investigated. It is found that small diodes…”
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Proton Irradiation Effects in Mos and Junction Field-Effect Transistors and Integrated Circuits by Bryant, Floyd R., Fales, Carl L., Breckenridge, Roger A.

“…Because of the application of field-effect transistors, and integrated circuits in space electronic systems and the fact that proton irradiation data at…”
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Reliability Screening Procedures for Integrated Circuits by Gill, W., Workman, W.

“…This paper discusses reliability screening techniques for integrated circuits which can be used in conjunction with a standard process normally producing…”
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Load-Life Tests of Cr-SiO Cermet Thin-Film Resistors by Schaible, P. M., Overmeyer, J. C., Glang, R.

“…Cr-SiO cerment thin films have been used to fabricate microminiature resistors which are compatible in size with monolithic circuits. Teh stability of these…”
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Temporary Neutron Damage in Transistors by Barnett, B., Langsam, L. M., Schoch, C. B., Schow, D. A.

“…The amount and duration of temporary neutron damage were measured in a wide variety of types of transistors at the White Sands Pulsed Reactor. They all shoed a…”
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Progressive Failure Mechanisms of a Commercial Silicon Diode by Schenck, J. F.

“…Two forms of progressive degradation of a commercial silicon signal diode have been stuided as a function of various stress and measurement variables. One mode…”
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Correlation of Electrical, Microstructural, and Chemical Properties of Heat-Treated Platinum-Silicon Contract Devices by Silverman, R., Cerniglia, N.

“…It has been shown that planar transistors with good electrical properties can be prepared with platinum contacts heat treated from 550° to 700°C. Anomalous…”
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Prevention of Stress-Corrosion Failure in Iron-Nickel-Cobalt Alloy Semiconductor Device Leads by Elkind, M. J., Hughes, H. E.

“…It is now known that the iron-nickel-cobalt alloy, commonly used for semiconductor device leads, is susceptible to stress corrosion cracking. Though this…”
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Some Unifying Concepts in Reliablity Physics, Mathematical Models, and Statistics by Thomas, Ralph E.

“…The basic concepts of dimensional analysis are used to make a general examination of reliability physics, mathematical models, and statistics. Beginning with…”
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Failure Mechanisms in Passivated P+ -N Junctions Under Temperature and Bias Stress by Tokuyama, Takashi

“…The mechanisms for anomalous increase of reverse current by reverse bias and temperature stress treatment on silicon p+-n planar junctions are analysed in…”
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A Plague-Free Aluminum-Gold System on Silicon Integrated Circuits by Schuster, M.A., Lytle, W. J.

“…A stable and reliable aluminum-gold system for inter-connections, contact pads, and bonded lead wires for silicon integrated circuits has been studied. The…”
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