Search Results - "Fields, C. H."

A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology by Sokolich, M., Fields, C.H., Thomas, S., Binqiang Shi, Boegeman, Y.K., Martinez, R., Kramer, A.R., Madhav, M.

“…We report a 72.8-GHz fully static frequency divider in AlInAs/InGaAs HBT IC technology. The CML divider operates with a 350-mV logic swing at less than 0-dBm…”
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RF modeling approach to determining end-of-life reliability for InP-based HBTs by Thomas III, S, Fields, C.H, Madhav, M

“…Reliability testing for high-speed, compound semiconductor, heterojunction bipolar transistors (HBTs) has focused on determining device lifetimes based on…”
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IF-sampling fourth-order bandpass /Delta//Sigma/ modulator for digital receiver applications by Cosand, A E, Jensen, J F, Choe, H C, Fields, C H

“…Bandpass modulators sampling at high IFs (~200 MHz) allow direct sampling of an IF signal, reducing analog hardware, and make it easier to realize completely…”
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InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers by Sokolich, M., Chen, M.Y., Rajavel, R.D., Chow, D.H., Royter, Y., Thomas, S., Fields, C.H., Binqiang Shi, Bui, S.S., James Chingwei Li, Hitko, D.A., Elliott, K.R.

“…We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process, we have demonstrated…”
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Patterned n+ implant into InP substrate for HBT subcollector by Chen, M.Y., Sokolich, M., Chow, D.H., Bui, S., Royter, Y., Hitko, D., Thomas, S., Fields, C.H., Rajavel, R.D., Biqiang Shi

“…We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below…”
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InP-HBT optoelectronic integrated circuits for photonic analog-to-digital conversion by Broekaert, T.P.E., Jensen, J.F., Yap, D., Persechini, D.L., Bourgholtzer, S., Fields, C.H., Brown-Boegeman, Y.K., Binqiang Shi, Walden, R.H.

“…A monolithically integrated optical receiver and a 4-bit flash analog-to-digital converter, all in InP HBT technology, have been implemented. The optical…”
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Application of silicon-based process simulation tools to the fabrication of heterojunction bipolar transistors by Fields, C.H., Thomas, S.

“…Process simulation is not widely used to date in the compound semiconductor industry. This is due in part to several issues that exist in applying commercially…”
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Planar integration of heterojunction bipolar transistors and resonant tunneling diodes by Thomas, S., Chow, D. H., Kiziloglu, K., Fields, C. H., Madhav, M., Arthur, A.

“…A process is reported for monolithic integration of heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs). The InGaAs/AlInAs HBT…”
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Fabrication and performance of InAs-based heterojunction bipolar transistors by Thomas, S., Elliott, K., Chow, D.H., Shi, B., Deelman, P., Brewer, P., Arthur, A., Rajavel, R., Fields, C.H., Madhav, M.

“…InAs-based heterojunction bipolar transistors (HBTs) have great potential for applications requiring high speed and low power integrated circuits. Significant…”
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Fabrication of InP-based HBT integrated circuits by Thomas, S., Fields, C.H., Sokolich, M., Kiziloglu, K., Chow, D.

“…HRL Laboratories supports three versions of InP-based HBT IC technologies. The first technology, based on 2.0 /spl mu/m minimum feature size, began development…”
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Simulated fabrication of heterojunction bipolar transistors using process technology CAD tools by Fields, C.H., Thomas, S.

“…Process simulation is not widely used to date in the compound semiconductor industry owing in part to several issues that exist in applying commercially…”
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Integrated multiple sensor controlled molecular beam epitaxy for high performance electronic devices by Chow, D.H., Roth, J.A., Thomas, S., Kiziloglu, K., Fields, C.H., Arthur, A., Enquist, P.M., Fountain, G., Reed, F., Johs, B., Olson, G.L., Williamson, W.S.

“…We report the application of sensor-controlled molecular beam epitaxy (MBE) to the development of integrated electronic devices, specifically heterojunction…”
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Submicron AlInAs/InGaAs HBT with 160 GHz f(T) at 1 mAcollector current by Sokolich, M, Fields, C H, Madhav, M

“…We have demonstrated a submicron heterojunction bipolar transistor (SHBT) with a unity current gain cutoff frequency (f(t)) of 160 GHz at the very low current…”
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A 2-GS/s 3-bit /spl Delta//spl Sigma/-modulated DAC with tunable bandpass mismatch shaping by Kaplan, T.S., Jensen, J.F., Fields, C.H., Chang, M.-C.F.

“…Direct digital synthesis of signals in the hundreds of megahertz can lead to simpler, smaller transceivers, free of images and LO feedthrough that plague…”
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A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) by Li, J.C., Chen, M., Hitko, D.A., Fields, C.H., Binqiang Shi, Rajavel, R., Asbeck, P.M., Sokolich, M.

“…The selectively implanted buried subcollector (SIBS) is a method to decouple the intrinsic and extrinsic C/sub BC/ of InP-based double-heterojunction bipolar…”
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At-wavelength characterization of an extreme ultraviolet camera from low to mid-spatial frequencies with a compact laser plasma source by Ray-Chaudhuri, A. K., Krenz, K. D., Fields, C. H.

“…The final alignment and characterization of an extreme ultraviolet (EUV) lithographic projection optics system must be performed at the operating wavelength in…”
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Direct aerial image measurement as a method of testing high numerical aperture microlithographic lenses by Partlo, William N., Fields, Charles H., Oldham, William G.

“…A method for testing high numerical aperture (NA) microlithographic lenses using direct aerial image measurements has been developed. By measuring contrast…”
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A low power (45mW/latch) static 150GHz CML divider by Hitko, D. A., Hussain, T., Jensen, J. F., Royter, Y., Morton, S. L., Matthews, D. S., Rajavel, R. D., Milosavljevlc, I., Fields, C. H., Thomas, S., Kurdoghllan, A., Lao, Z., Elliott, K., Sokolich, M.

“…Operation of a static, current mode logic (CML) frequency divider to clock frequencies exceeding 150GHz is reported. The divide-by-8 circuit described here has…”
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Initial results from an extreme ultraviolet interferometer operating with a compact laser plasma source by Ray‐Chaudhuri, A. K., Krenz, K. D., Nissen, R. P., Haney, S. J., Fields, C. H., Sweatt, W. C., MacDowell, A. A.

“…When characterizing an extreme ultraviolet (EUV) lithographic optical system, visible light interferometry is limited to measuring wave front aberration caused…”
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Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography system by Fields, C. H., Oldham, W. G., Ray‐Chaudhuri, A. K., Krenz, K. D., Stulen, R. H.

“…We report the application of direct aerial image monitoring to measure the performance of an extreme ultraviolet lithography (EUVL) test bed. There are several…”
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