Search Results - "Field, Daniel A"
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Chemical analysis of graphene oxide films after heat and chemical treatments by X-ray photoelectron and Micro-Raman spectroscopy
Published in Carbon (New York) (2009)“…Several nanometer-thick graphene oxide films deposited on silicon nitride-on silicon substrates were exposed to nine different heat treatments (three in Argon,…”
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Reduction Kinetics of Graphene Oxide Determined by Electrical Transport Measurements and Temperature Programmed Desorption
Published in Journal of physical chemistry. C (29-10-2009)“…The thermal stability and reduction kinetics of graphene oxide were studied by measuring the electrical resistivity of single-layer graphene films at various…”
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Encapsulating Ion-Solid Interactions in Metal-Oxide-Semiconductor (MOS) Devices
Published in IEEE transactions on nuclear science (01-12-2015)“…We report on a measurement of low energy ion irradiation effects on as-grown films of SiO2 on a Si substrate. Beams of normally incident Na + ions with kinetic…”
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Tracking subsurface ion radiation damage with metal–oxide–semiconductor device encapsulation
Published in Journal of materials research (14-05-2015)“…We describe measurements aimed at tracking the subsurface energy deposition of ionic radiation by encapsulating an irradiated oxide target within multiple,…”
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St. John's Wort
Published in International journal of psychiatry in medicine (01-01-2000)“…Objective: The objective of this article is to review the current knowledge of the pharmacology, sites of action, and therapeutic effectiveness of St. John's…”
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A tin based TAB assembly process
Published in [1991 Proceedings] Eleventh IEEE/CHMT International Electronics Manufacturing Technology Symposium (1991)“…The feasibility of using a TinCap TAB (tape automated bonding) ILB (inner lead bond) structure to provide a strong ILB connection has been demonstrated. The…”
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