Search Results - "Feurprier, Y."

Improving uniformity of 3-level High Aspect Ratio Supervias by Montero, D., Marien, P., Hermans, Y., Vega-Gonzalez, V., Feurprier, Y., Oikawa, N., Buccheri, N., Wu, C., Martinez, G.T., Batuk, D., Puliyalil, H., Decoster, S., Kumar, K., Lazzarino, F., Murdoch, G., Park, S., Tokei, Z.

“…High aspect-ratio (AR) 3-level Supervias (SV), with a minimum bottom CD of 12.1 nm, AR = 9.4 and with > 93 % electrically active SV are successfully integrated…”
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Enabling 3-level High Aspect Ratio Supervias for 3nm nodes and below by Montero, D., Vega-Gonzalez, V., Feurprier, Y., Pedreira, O. Varela, Oikawa, N., Martinez, G.T., Batuk, D., Puliyalil, H., Versluijs, J., Decoster, H., Bazzazian, N., Jourdan, N., Kumar, K., Lazzarino, F., Murdoch, G., Park, S., Tokei, Z.

“…High aspect-ratio (AR) 3-level Supervias (SV), with a minimum bottom CD of 15.5 nm and AR = 7.7 are successfully integrated in a 3nm node chip. 3-level SV…”
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MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor by Féron, O, Sugiyama, M, Asawamethapant, W, Futakuchi, N, Feurprier, Y, Nakano, Y, Shimogaki, Y

“…In order to build a numerical model for the growth of ternary (InGaAs, InGaP) or quaternary materials (InGaAsP), data on growth rate and composition…”
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High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether by Chinzei, Y., Feurprier, Y., Ozawa, M., Kikuchi, T., Horioka, K., Ichiki, T., Horiike, Y.

“…Measurements of the ion species generated in the planar type neutral loop discharge of tetrafluoroethyl trifluoromethyl ether (CF3–O–CHF–CF3;HFE 227)…”
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Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis by Feurprier, Y., Cardinaud, Ch, Grolleau, B., Turban, G.

“…The influence of CH4-H2 mixture composition and rf power input on the etching mechanism of InP is discussed. Argument is based on etch rate measurements,…”
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Microloading effect in ultrafine SiO2 hole/trench etching by Feurprier, Y., Chinzei, Y., Ogata, M., Kikuchi, T., Ozawa, M., Ichiki, T., Horiike, Y.

“…In the search of new etchant gas combinations which address the earth’s environmental concerns, a new C3F6-based plasma etch chemistry is investigated and…”
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Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene process by Carballo, V.M. Blanco, De Wachter, K. Vandersmissen. B., Nafus, K., Feurprier, Y., Thiam, A., Hsu, A., Tabery, C., Doise, J., De Schepper, P.

“…In this work we have developed a single layer short loop damascene process to evaluate and optimize patterning performance of pitch 26nm single exposure 0.33…”
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High aspect ratio SiO sub(2) etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether by Chinzei, Y, Feurprier, Y, Ozawa, M, Kikuchi, T, Horioka, K, Ichiki, T, Horiike, Y

“…In this study, HFE 227 as an alternative gas to replace perfluorocarbon gases in the semiconductor device manufacturing processes was evaluated for the SiO…”
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High aspect ratio SiO 2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether by Chinzei, Y., Feurprier, Y., Ozawa, M., Kikuchi, T., Horioka, K., Ichiki, T., Horiike, Y.

“…Measurements of the ion species generated in the planar type neutral loop discharge of tetrafluoroethyl trifluoromethyl ether ( CF 3 –O–CHF–CF 3 ;HFE 227 )…”
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Proposal for an etching mechanism of InP in CH 4 -H 2 mixtures based on plasma diagnostics and surface analysis by Feurprier, Y., Cardinaud, Ch, Grolleau, B., Turban, G.

“…The influence of CH 4 -H 2 mixture composition and rf power input on the etching mechanism of InP is discussed. Argument is based on etch rate measurements,…”
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MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor by FERON, O, SUGIYAMA, M, ASAWAMETHAPANT, W, FUTAKUCHI, N, FEURPRIER, Y, NAKANO, Y, SHIMOGAKI, Y

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Microloading effect in ultrafine SiO 2 hole/trench etching by Feurprier, Y., Chinzei, Y., Ogata, M., Kikuchi, T., Ozawa, M., Ichiki, T., Horiike, Y.

“…In the search of new etchant gas combinations which address the earth’s environmental concerns, a new C 3 F 6 -based plasma etch chemistry is investigated and…”
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X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH 4 –H 2 plasmas by Feurprier, Y., Cardinaud, Ch, Turban, G.

“…The plasma–surface interaction during CH 4 –H 2 reactive ion etching processing of InP is described in detail by means of plasma diagnostics (optical emission…”
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Influence of the gas mixture on the reactive ion etching of InP in CH 4 -H 2 plasmas by Feurprier, Y., Cardinaud, Ch, Turban, G.

“…The influence of the CH 4 -H 2 mixture composition on the etching process of InP is investigated by means of plasma diagnostics (optical emission spectroscopy…”
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