Search Results - "Fesquet, J"

Effect of switching from high to low dose rate on linear bipolar technology radiation response by Boch, J., Saigne, F., Schrimpf, R.D., Fleetwood, D.M., Ducret, S., Dusseau, L., David, J.P., Fesquet, J., Gasiot, J., Ecoffet, R.

“…The degradation of discrete and integrated-circuit bipolar technologies irradiated at High Dose Rate (HDR) and then switched to Low Dose Rates (LDR) is…”
Get full text

Quality control of intensity modulated radiation therapy with optically stimulated luminescent films by Idri, K., Santoro, L., Charpiot, E., Herault, J., Costa, A., Ailleres, N., Delard, R., Vaille, J.R., Fesquet, J., Dusseau, L.

“…An optically stimulated luminescent (OSL) dose mapping system is characterized and its possible application to intensity modulated radiotherapy therapy (IMRT)…”
Get full text

Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage by Germanicus, R., Barde, S., Dusseau, L., Rolland, G., Barillot, C., Saigne, F., Ecoffet, R., Calvel, P., Fesquet, J., Gasiot, J.

“…Proton-irradiation results ranging from 17 MeV to 100 MeV are presented for silicon commercial off-the-shelf charge-coupled devices. Mean degradation of the…”
Get full text

An integrated sensor using optically stimulated luminescence for in-flight dosimetry by Dusseau, L., Plattard, D., Vaille, J.R., Polge, G., Ranchoux, G., Saigne, F., Fesquet, J., Ecoffet, R., Gasiot, J.

“…The feasibility of an integrated sensor based on Optically Stimulated Luminescence (OSL) dosimetry is demonstrated. The principle and the basic structure are…”
Get full text

Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetry by Plattard, D., Ranchoux, G., Dusseau, L., Polge, G., Vaille, J.-R., Gasiot, J., Fesquet, J., Ecoffet, R., Iborra-Brassart, N.

“…The signal linearity versus a dose of an integrated sensor based on optically stimulated luminescence is examined with electrons, protons, and photons of…”
Get full text

Analysis of the proton-induced permanent degradation in an optocoupler by Germanicus, R., Dusseau, L., Saigne, F., Barde, S., Ecoffet, R., Mion, O., Calvel, R., Fesquet, J., Gasiot, J.

“…We have studied the effect of proton irradiation with energies from 21 to 200 MeV on commercial optocouplers. The basic degradation mechanisms for such devices…”
Get full text

High-energy particle irradiation of optically stimulated luminescent films at CERN by Dusseau, L., Polge, G., Mathias, S., Vaille, J.R., Germanicus, R., Broadhead, R., Camanzi, B., Glaser, M., Saigne, F., Fesquet, J., Gasiot, J.

“…For the first time, optically stimulated luminescent (OSL) dosimeters have been irradiated at CERN with high-energy particles. Two experiments with existing…”
Get full text

Model for high-temperature radiation effects in n-p-n bipolar-junction transistors by Boch, J., Saigne, F., Mannoni, V., Giustino, F., Schrimpf, R.D., Dusseau, L., Galloway, K.F., Fesquet, J., Gasiot, J., Ecoffet, R.

“…A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature…”
Get full text

Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature by Boch, J., Saigne, E., Maurel, T., Giustino, F., Dusseau, L., Schrimpf, R.D., Galloway, K.F., David, J.P., Ecoffet, R., Fesquet, J., Gasiot, J.

“…The effect of high-temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in…”
Get full text

Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry by Dusseau, L., Polge, G., Albert, L., Magnac, Y., Bessiere, J.C., Fesquet, J., Gasiot, J.

“…The feasibility of a dose mapping system using optically stimulated luminescent (OSL) phosphors is demonstrated. The OSL technique is briefly reviewed as well…”
Get full text

Evaluation of MOS devices' total dose response using the isochronal annealing method by Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., Schrimpf, R.D., Galloway, K.F.

“…We irradiated and then annealed 4049 CMOS inverters from four different manufacturers using the isochronal annealing method. From one manufacturer to another,…”
Get full text

Proton dosimetry measurements and calculations in electronic packages using optically stimulated luminescent films by Ranchoux, G., Plattard, D., Polge, G., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., Iborra-Brassart, N.

“…The energy deposited by protons versus depth in a dual in line package is measured using the technique of the optically stimulated luminescence. The dose…”
Get full text

Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs by Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., Schrimpf, R.D., Galloway, K.F.

“…In this paper, a procedure is proposed to predict the long-term behavior of commercial metal oxide semiconductor field effect transistors not only after…”
Get full text

High energy electron dose-mapping using optically stimulated luminescent films by Dusseau, L., Ranchoux, G., Polge, G., Plattard, D., Saigne, F., Bessiere, J.C., Fesquet, J., Gasiot, J.

“…High energy electron dose mapping is a complex subject. Experiments using optically stimulated luminescent films behind various shielding structures and dual…”
Get full text

Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices by Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., David, J.P., Schrimpf, R.D., Galloway, K.F.

“…A new method for accelerated prediction of the long-term thermal annealing of bulk oxide trapped charge in the low dose rate space environment was presented in…”
Get full text

Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves by Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., Schrimpf, R.D., Galloway, K.F.

“…In a previous paper, a method was proposed to predict the thermal annealing of irradiated devices from a single experimental isochronal curve. In this paper,…”
Get full text

Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements by Saigné, F., Quittard, O., Dusseau, L., Joffre, F., Oudéa, C., Fesquet, J., Gasiot, J.

“…In the present paper, the methodology to predict the long-term isothermal annealing of irradiated devices from a single isochronal curve is applied for the…”
Get full text

Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperature by Boch, J., Saigne, F., Maurel, T., Giustino, F., Dusseau, L., Schrimpf, R.D., Galloway, K.F., David, J.P., Ecoffet, R., Fesquet, J., Gasiot, J.

“…The effect of high temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in…”
Get full text

Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs by Quittard, O, Joffre, F, Brisset, C, Oudea, C, Saigne, F, Dusseau, L, Fesquet, I, Gasiot, J

“…Irradiation of electronic devices has varying impact on their electrical characteristics, according to the concomitant bias scenario. Under bias, there is a…”
Get full text

Thermoluminescence of LiF:Mg,Cu,P (GR-200A) TLD after annealing between 200 and 400°C by CAI, G. G, FESQUET, J, DUSSEAU, L, MARTINI, M, MEINARDI, F, HUANG, B. L, TANG, K. Y, BETEILLE, D, GASIOT, J

Get full text