Search Results - "Ferrus, T."

Electron temperature in electrically isolated Si double quantum dots by Rossi, A., Ferrus, T., Williams, D. A.

“…Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in…”
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Detection of charge motion in a non-metallic silicon isolated double quantum dot by Ferrus, T, Rossi, A, Tanner, M, Podd, G, Chapman, P, Williams, D A

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GHz photon-activated hopping between localized states in a silicon quantum dot by Ferrus, T, Rossi, A, Andreev, A, Kodera, T, Kambara, T, Lin, W, Oda, S, Williams, D A

“…We discuss the effects of gigahertz photon irradiation on a degenerately phosphorus-doped silicon quantum dot, in particular, the creation of voltage offsets…”
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Detection of variable tunneling rates in silicon quantum dots by Rossi, A., Ferrus, T., Lin, W., Kodera, T., Williams, D. A., Oda, S.

“…Reliable detection of single electron tunneling in quantum dots (QDs) is paramount to use this category of device for quantum information processing. Here, we…”
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Charge detection in phosphorus-doped silicon double quantum dots by Rossi, A., Ferrus, T., Podd, G. J., Williams, D. A.

“…The ability to control and detect single electrons is paramount for the implementation of a scalable charge-based quantum computer and single-electron memory…”
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Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors by Ferrus, T., George, R., Barnes, C. H. W., Pepper, M.

“…We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create…”
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Single shot measurement of a silicon single electron transistor by Hasko, D. G., Ferrus, T., Morrissey, Q. R., Burge, S. R., Freeman, E. J., French, M. J., Lam, A., Creswell, L., Collier, R. J., Williams, D. A., Briggs, G. A. D.

“…We have fabricated a custom cryogenic complementary metal-oxide-semiconductor integrated circuit that has a higher measurement bandwidth compared to…”
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Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots by Ferrus, T., Rossi, A., Lin, W., Williams, D. A., Kodera, T., Oda, S.

“…We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin…”
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Magnetoconductivity of Hubbard bands induced in silicon MOSFETs by Ferrus, T., George, R., Barnes, C.H.W., Lumpkin, N., Paul, D.J., Pepper, M.

“…Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low…”
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Magnetoresistance of low dimensional mesoscopic honeycomb-shaped GaAs networks by Galibert, J., Samuilov, V.A., Ksenevich, V.K., Ferrus, T., Rafailovich, M., Sokolov, J.

“…A novel and simple method of fabrication of mesoscopic honeycomb-shaped networks was applied in order to decrease the dimension of the 2-D gas with electron…”
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Manipulation of silicon quantum dots and isolated structures using GHz photons by Ferrus, T., Rossi, A., Kodera, T., Kambara, T., Oda, S., Williams, D. A.

“…We demonstrate that microwave photons can be used to remotely manipulate electron tunneling across a tunnel barrier at 4.2 K. A similar method is used to…”
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Controlling single qubit gate fidelity in double quantum dots by Mosakowski, J., Ferrus, T., Williams, D. A., Owen, E., Dean, M., Barnes, C. H. W.

“…Quantum computation offers ways of solving problems which are unreachable for classical computers [1]. Double quantum dots are of great interest as candidates…”
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Disorder and electron interaction control in low-doped siliconmetal-oxide-semiconductor field effect transistors by Ferrus, T., George, R., Barnes, C. H. W., Pepper, M.

“…We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create…”
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Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots by Gonzalez-Zalba, M.F., Galibert, J., Iacovella, F., Williams, D., Ferrus, T.

“…We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T…”
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Broadening processes in GaAsδ-doped quantum wire superlattices by Ferrus, T., Goutiers, B., Galibert, J., Michelini, F.

“…We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a δ…”
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Engineering single donor detectors in doped silicon by Lasek, A. A, Barnes, C. H. W, Ferrus, T

“…We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy…”
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Evidence for multiple impurity bands in sodium-doped silicon MOSFETs by Ferrus, T., George, R., Barnes, C. H. W., Lumpkin, N., Paul, D. J., Pepper, M.

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GaAsδ-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov–de Haas oscillations by Ferrus, T., Goutiers, B., Galibert, J., Ressier, L., Peyrade, J.P.

“…Quantum wire superlattices (1D) realized by controlled dislocation slipping in quantum well superlattices (2D) (atomic saw method) have already shown…”
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Magnetoconductivity of Hubbard bands induced in silicon MOSFERs by FERRUS, T, GEORGE, R, BARNES, C. H. W, LUMPKIN, N, PAUL, D. J, PEPPER, M

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Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators by Devlin, N. B, Ferrus, T, Barnes, C. H. W

“…Phys. Rev. B 104, 054433 (2021) We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of…”
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