Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal
Two commercially available TlBr salts were used as the raw material for crystal growths to be used as radiation detectors. Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgman method. The purification efficiency was evaluated by inductively coupled plasma mass s...
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| Published in: | Advances in materials science and engineering Vol. 2017; no. 2017; pp. 1 - 10 |
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| Main Authors: | , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Cairo, Egypt
Hindawi Publishing Corporation
01-01-2017
Hindawi Hindawi Limited |
| Subjects: | |
| Online Access: | Get full text |
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| Summary: | Two commercially available TlBr salts were used as the raw material for crystal growths to be used as radiation detectors. Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgman method. The purification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS), after each purification process. A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals. The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers. To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources. A significant improvement of the radiation response was observed in function of the crystal purity. |
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| ISSN: | 1687-8434 1687-8442 |
| DOI: | 10.1155/2017/1750517 |