Search Results - "Fernier, B."

High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE by Pagnod-Rossiaux, Ph, Gaborit, F., Tscherptner, N., Roux, L., Starck, C., Fernier, B.

“…We report on an experimental investigation of the temperature sensitivity of (Ga)InAsP compressively strained multi-quantum well (MQW) 1.3 μm broad area lasers…”
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Leading-edge laser production using two-inch technology by Simes, R., Capella, R. M., Fernier, B., Mayer, H. P.

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High-performance semiconductor optical preamplifier receiver at 10 Gb/s by Mikkelsen, B., Jorgensen, C.G., Jensen, N., Durhuus, T., Stubkjaer, K.E., Doussiere, P., Fernier, B.

“…A semiconductor optical preamplifier receiver for bitrates of 10 Gb/s is described. The measured sensitivity is -28 dBm, with a polarization sensitivity of…”
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Two-section semiconductor optical amplifier used as an efficient channel dropping node by Jorgensen, C., Storkfelt, N., Durhuus, T., Mikkelsen, B., Stubkjaer, K.E., Fernier, B., Gelly, G., Doussiere, P.

“…High responsivity in a two-section semiconductor optical amplifier/detector, serving as a channel dropping mode is described. A simple receiver constructed…”
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Highly sensitive 565 Mb/s DPSK heterodyne transmission experiment using direct current modulation of a DFB laser transmitter by Clesca, B., Chesnoy, J., Biotteau, B., Jacquinot, J.C., Accard, A., Bissessur, H., Fernier, B., Lemaire, V.

“…A comparison between external phase modulation and phase modulation obtained through direct current modulation of a multiquantum-well distributed feedback…”
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UV-250 patterning of sub-micron tapered active layers by Tregoat, D., Colson, V., Coquard, J., Le Gouezigou, L., Lestra, A., Pinquier, A., Poingt, F., Fernier, B.

“…This paper reports the first results on Fabry-Perot 1.3 /spl mu/m lasers with sub-micron tapered active layers defined using a UV-250 patterning technology in…”
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Interferometric determination of the linewidth enhancement factor of a 1.55 μm GaInAsP optical amplifier by EHRHART, J. F, VILLENEUVE, A, ASSANTO, G, STEGEMAN, G. I, MERSALI, B, ACCARD, A, GELLY, G, FERNIER, B

“…We report on the measurement of the small signal gain and index variation of a GaInAsP semiconductor optical amplifier as a function of the injected current in…”
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Carrier diffusion effects on quantum noise spectra in long wavelength BH lasers by Brosson, P., Fernier, B., Leclerc, D., Benoit, J.

“…We report experimental and theoretical investigations on quantum noise fluctuations in the microwave frequency range on InGaAsP/InP BH lasers (1.3 and 1.5 μm…”
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Low-cost laser modules for SMT by Rehm, W., Adam, K., Goth, A., Jorg, W., Lauckner, J., Scherb, J., Aribaud, P., Artigue, C., Duchemin, C., Fernier, B., Grard, E., Keller, D., Kerboeuf, S., Rabaron, S., Rainsant, J.M., Tregoat, D., Nicque, J.L., Tournereau, A., Laroulandie, P.J., Berthier, P.

“…A passive assembly process for laser modules has been developed that is based on silicon submounts with 3-dimensional structures and corresponding laser chips…”
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Leading-edge optoelectronic device production using two-inch technology by Simes, R., Capella, R.M., Fernier, B., Mayer, H.P.

“…InP processing and results achieved on two-inch wafers are reviewed with an emphasis on lasers. High-performance, high-reliability lasers are demonstrated…”
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New WDM DFB laser structure for facet phase-free uniform performances by Thedrez, B., Voiriot, V., Hubert, S., Lafragette, J.L., Roux, L., Grillot, F., Gentner, J.L., Fernier, B.

“…A new concept for a DFB MQW monomode laser has been proposed and demonstrated. The new structure combines high SMSR, excellent uniformity, high efficiency and…”
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High performance 1.3 μm SLMQW BRS lasers for 85°C operation by STARCK, C, LAFRAGETTE, J.-L, PAGNOD-ROSSIAUX, P, LEGOUEZIGOU, L, POINGT, F, ROUX, L, FERNIER, B

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Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature by Lestra, A, Aubert, P, Colson, V, Gentner, J.L, Grard, E, Lafragette, J.L, Le Gouezigou, L, Pinquier, A, Roux, L, Toullier, D, Tregoat, D, Fernier, B

“…High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that…”
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Leading-edge laser production using two-inch technology: Optoelectronics based on indium phosphide and related materials by SIMES, R, CAPELLA, R. M, FERNIER, B, MAYER, H. P

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Power and facet phase dependence of chirp for index and gain-coupled DFB lasers by Thedrez, B., Rainsant, J.M., Aberkane, N., Andre, B., Bissessur, H., Provost, J.G., Fernier, B.

“…The adiabatic chirp of DFB semiconductor lasers is shown to be power and facet phase dependent. Importance of this effect on transmission is demonstrated using…”
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High-efficiency 1.3 /spl mu/m Fabry-Perot laser diode based on hydrogenated passive spot-size converter by Tregoat, D., Barthe, F., Berthier, P., Bordes, M., Colson, V., Gentner, J.L., Hubert, S., Leclerc, D., Le Gouezigou, L., Lestra, A., Rao, E.V.K., Tscherptner, N., Fernier, B.

“…We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size…”
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High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE by PAGNOD-ROSSIAUX, P, GABORIT, F, TSCHERPTNER, N, ROUX, L, STARCK, C, FERNIER, B

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1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process by Voiriot, V., Thedrez, B., Gentner, J.L., Rainsant, J.-M., Colson, V., Duchemin, C., Gaborit, F., Hubert, S., Lafragette, J.L., Pinquier, A., Roux, L., Fernier, B.

“…We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to…”
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Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA) by Fernier, B., Brosson, P., Bayart, D., Doussiere, P., Beaumont, R., Leblond, F., Morin, P., Da Loura, G., Jacquet, J., Derouin, E., Garabedian, P.

“…Switching characteristics (300ps) of polarization insensitive (<0.3dB) Tapered Semiconductor OFtical Amplifiers with 20 dB fiber to fiber gain and //sup +/sub…”
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1.55 /spl mu/m DFB lasers with integrated spot size converters operating at 2.5 Gbit/s with modulated power over 20 mW for 180 km transmission by Thedrez, B., Rainsant, J.M., Voiriot, V., Lafragett, J.L., Roux, L., Pinquier, A., Fernier, B.

“…Low-divergence 1.55 /spl mu/m distributed feedback (DFB) lasers with spot-size converter were used to demonstrate <1.5 db penalty after 180 km transmission at…”
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