Search Results - "Fenigstein, Amos"
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Hybrid image sensor of small molecule organic photodiode on CMOS – Integration and characterization
Published in Scientific reports (05-05-2020)“…Organic photodiodes (OPDs) for its interesting optoelectronic properties has the potential to be utilized with complementary metal-oxide-semiconductor (CMOS)…”
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Total Ionizing Dose effects on CMOS image sensor for the ULTRASAT space mission
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-09-2023)“…ULTRASAT (ULtraviolet TRansient Astronomy SATellite) is a wide-angle space telescope that will perform deep time-resolved surveys in the near-ultraviolet…”
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Doping induced performance enhancement in inverted small molecule organic photodiodes operating below 1V reverse bias - Towards compatibility with CMOS for imaging applications
Published in Organic electronics (01-04-2019)“…Organic photodiodes (OPDs) offer a myriad of advantages over conventional inorganic photodetectors, making them particularly attractive for imaging…”
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Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors
Published in IEEE transactions on electron devices (01-11-2024)“…The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion…”
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Preliminary results of the Single Event Effect testing for the ULTRASAT sensors
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-11-2024)“…ULTRASAT (ULtra-violet TRansient Astronomy SATellite) is a wide-angle space telescope that will perform a deep time-resolved all-sky survey in the…”
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Passive CMOS Single Photon Avalanche Diode Imager for a Gun Muzzle Flash Detection System
Published in IEEE sensors journal (15-07-2019)“…We present the architecture and design of a novel <inline-formula> <tex-math notation="LaTeX">64\times64 </tex-math></inline-formula> CMOS single-photon…”
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Dead Time Compensation in CMOS Single Photon Avalanche Diodes With Active Quenching and External Reset
Published in IEEE transactions on electron devices (01-08-2014)“…Single photon avalanche diodes (SPADs) in CMOS are becoming increasingly interesting devices for timing applications, such as fluorescence lifetime imaging,…”
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Development of a ToF Pixel With VOD Shutter Mechanism, High IR QE, Four Storages, and CDS
Published in IEEE transactions on electron devices (01-07-2016)“…In this paper we discuss the development of an indirect time-of-flight (ToF) pixel in the 0.11-μm CMOS image sensor technology. The pixel design is based on a…”
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Total Ionizing Dose Effects on CMOS Image Sensor for the ULTRASAT Space Mission
Published 27-06-2023“…Nuclear Inst. and Methods inPhysics Research, A (2023) 168463 ULTRASAT (ULtraviolet TRansient Astronomy SATellite) is a wide-angle space telescope that will…”
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Skipper-in-CMOS: Non-Destructive Readout with Sub-Electron Noise Performance for Pixel Detectors
Published 13-11-2024“…IEEE Transactions on Electron Devices, vol. 71, no. 11, pp. 6843-6849, Nov. 2024 The Skipper-in-CMOS image sensor integrates the non-destructive readout…”
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Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance
Published 07-05-2019“…CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The…”
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Sensor characterization for the ULTRASAT space telescope
Published 05-08-2021“…The Ultraviolet Transient Astronomical Satellite is a scientific space mission carrying an astronomical telescope. The mission is led by the Weizmann Institute…”
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Design of the ULTRASAT UV camera
Published 03-08-2021“…The Ultraviolet Transient Astronomical Satellite (ULTRASAT) is a scientific UV space telescope that will operate in geostationary orbit. The mission, targeted…”
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Low frequency noise in surface and buried channel nanometric CMOS transistors
Published in 2014 IEEE 28th Convention of Electrical & Electronics Engineers in Israel (IEEEI) (01-12-2014)“…In this study the electrical and noise characteristics of surface and buried channel N-type MOSFETs are widely investigated and compared. Various operation…”
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Conference Proceeding -
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Extending endurance of NROM memories to over 10 million program/erase cycles
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)Get full text
Conference Proceeding