Search Results - "Feng, Jiagui"
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High-quality superconducting α-Ta film sputtered on the heated silicon substrate
Published in Scientific reports (07-08-2023)“…Intrigued by the discovery of the long lifetime in the α-Ta/Al 2 O 3 -based Transmon qubit, researchers recently found α-Ta film is a promising platform for…”
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2
Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2
Published in Nano letters (11-07-2018)“…How the interacting electronic states and phases of layered transition-metal dichalcogenides evolve when thinned to the single-layer limit is a key open…”
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3
Charge modulation and structural transformation in TaTe2 studied by scanning tunneling microscopy/spectroscopy
Published in Applied physics letters (11-07-2016)“…We show that the (3 × 1) stripe structure observed in TaTe2 at room temperature arises from the formation of Ta4+–Ta4+ dimer chains along with a separate chain…”
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4
Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates
Published in Scientific reports (22-07-2023)“…Tantalum and aluminum on sapphire are widely used platforms for qubits of long coherent time. As quantum chips scale up, the number of Josephson junctions on…”
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5
Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy
Published in Scientific reports (18-11-2019)“…We present a systematic study of surface band bending in Ga-polar n-GaN with different Si doping concentrations by angular dependent X-ray photoelectron…”
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6
Reconstructions on SrTiO3(111) surface tuned by Ti/Sr deposition
Published in Surface science (01-08-2013)“…The reconstruction of SrTiO3(111) polar surface is investigated by scanning tunneling microscopy (STM) and electron diffractions. The (4×4), (6×6) and (5×5)…”
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7
Tunable superconductivity of epitaxial TiN films through oxygen doping
Published in AIP advances (01-05-2020)“…Titanium nitride (TiN) film is a remarkable material for a variety of applications ranging from superhard coating to superconducting quantum devices, which can…”
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Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
Published in AIP advances (01-10-2021)“…Rare-earth nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike…”
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9
Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES
Published in APL materials (01-05-2019)“…As a member of ZrHM (H = Si/Ge/Sn; M = O/S/Se/Te) family materials, which were predicted to be the candidates of topological Dirac nodal-line semimetals,…”
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10
Growth of SrTiO3(110) film by oxide molecular beam epitaxy with feedback control
Published in AIP advances (01-12-2012)“…By controlling the growth of complex oxide films with atomic precision, emergent phenomena and fascinating properties have been discovered, and even been…”
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11
Stable Adsorption of Single Gold Atoms on the SrTiO3(111)-(9 × 9) Reconstructed Surface
Published in Journal of physical chemistry. C (28-02-2019)“…Scanning tunneling microscopy is used to study the SrTiO3(111)-(9 × 9) reconstructed surface and its single gold atom adsorption behavior. Each unit cell of…”
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12
Stable Adsorption of Single Gold Atoms on the SrTiO 3 (111)-(9 × 9) Reconstructed Surface
Published in Journal of physical chemistry. C (28-02-2019)Get full text
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13
Epitaxial α-Ta (110) film on a-plane sapphire substrate for superconducting qubits on wafer scale
Published in Japanese Journal of Applied Physics (01-10-2023)“…Abstract Realization of practical superconducting quantum computing requires many qubits of long coherence time. Compared to the commonly used Ta deposited on…”
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14
Growth of Metal Phthalocyanine on Deactivated Semiconducting Surfaces Steered by Selective Orbital Coupling
Published in Physical review letters (28-08-2015)“…Using scanning tunneling microscopy and density functional theory, we show that the molecular ordering and orientation of metal phthalocyanine molecules on the…”
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15
Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy
Published in Physica status solidi. A, Applications and materials science (01-02-2021)“…Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga2O3) films grown by ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure…”
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The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk
Published in Materials science in semiconductor processing (15-08-2022)“…Unintentionally-doped (UID) and Sn-doped crystals of (−201) β-Ga2O3 were high-temperature annealed in N2 and O2 atmospheres. Surface morphology and structure…”
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17
Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature
Published in Scientific reports (18-06-2015)“…Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene…”
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18
Fabrication of Al/AlO x /Al junctions with high uniformity and stability on sapphire substrates
Published in Scientific reports (22-07-2023)“…Tantalum and aluminum on sapphire are widely used platforms for qubits of long coherent time. As quantum chips scale up, the number of Josephson junctions on…”
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19
Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures
Published in Physica status solidi. A, Applications and materials science (01-05-2021)“…Herein, bandgap tuning of monoclinic (−201)‐oriented β‐(AlxGa1−x)2O3 thin films is achieved through a β‐Ga2O3/Al2O3 heterojunction by a feasible annealing…”
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20
Ultrafast Triggering of Insulator–Metal Transition in Two-Dimensional VSe2
Published in Nano letters (10-03-2021)“…The transition-metal dichalcogenide VSe2 exhibits an increased charge density wave transition temperature and an emerging insulating phase when thinned to a…”
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