Search Results - "Felmetsger, Valery"

AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators by Lin, Chih-Ming, Chen, Yung-Yu, Felmetsger, Valery V., Senesky, Debbie G., Pisano, Albert P.

“…An AlN/3C–SiC composite layer enables the third‐order quasi‐symmetric (QS3) Lamb wave mode with a high quality factor (Q) characteristic and an ultra‐high…”
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Homogeneity and Thermal Stability of Sputtered Al0.7Sc0.3N Thin Films by Carmona-Cejas, José Manuel, Mirea, Teona, Nieto, Jesús, Olivares, Jimena, Felmetsger, Valery, Clement, Marta

“…This work presents a study on the homogeneity and thermal stability of Al0.7Sc0.3N films sputtered from Al-Sc segmented targets. The films are sputtered on Si…”
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Temperature-compensated aluminum nitride lamb wave resonators by Lin, Chih-ming, Yen, Ting-ta, Lai, Yun-ju, Felmetsger, Valery V., Hopcroft, Matthew A., Kuypers, Jan H., Pisano, Albert P.

“…In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By…”
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Piezoelectric aluminum nitride nanoelectromechanical actuators by Sinha, Nipun, Wabiszewski, Graham E., Mahameed, Rashed, Felmetsger, Valery V., Tanner, Shawn M., Carpick, Robert W., Piazza, Gianluca

“…This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting…”
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Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications by Lin, Chih-Ming, Yen, Ting-Ta, Felmetsger, Valery V., Hopcroft, Matthew A., Kuypers, Jan H., Pisano, Albert P.

“…In this letter, temperature compensation for aluminum nitride (AlN) Lamb wave resonators operating at high temperature is presented. By adding a compensating…”
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AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices by Lin, Chih-Ming, Lien, Wei-Cheng, Felmetsger, Valery V., Hopcroft, Matthew A., Senesky, Debbie G., Pisano, Albert P.

“…Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C–SiC) layers on Si (100) substrates using…”
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Deposition of ultrathin AlN films for high frequency electroacoustic devices by Felmetsger, Valery V., Laptev, Pavel N., Graham, Roger J.

“…The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as…”
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Homogeneity and Thermal Stability of Sputtered Al 0.7 Sc 0.3 N Thin Films by Carmona-Cejas, José Manuel, Mirea, Teona, Nieto, Jesús, Olivares, Jimena, Felmetsger, Valery, Clement, Marta

“…This work presents a study on the homogeneity and thermal stability of Al Sc N films sputtered from Al-Sc segmented targets. The films are sputtered on Si…”
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Homogeneity and Thermal Stability of Sputtered Al[sub.0.7]Sc[sub.0.3]N Thin Films by Carmona-Cejas, José Manuel, Mirea, Teona, Nieto, Jesús, Olivares, Jimena, Felmetsger, Valery, Clement, Marta

“…This work presents a study on the homogeneity and thermal stability of Al[sub.0.7]Sc[sub.0.3]N films sputtered from Al-Sc segmented targets. The films are…”
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Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from CrSi2–Cr–SiC targets by S-gun magnetron by Felmetsger, Valery V.

“…Technological solutions for producing nanoscale cermet resistor films with sheet resistances above 1000Ω∕◻ and low temperature coefficients of resistance (TCR)…”
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Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from Cr Si 2 – Cr – Si C targets by S-gun magnetron by Felmetsger, Valery V.

“…Technological solutions for producing nanoscale cermet resistor films with sheet resistances above 1000 Ω ∕ ◻ and low temperature coefficients of resistance…”
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Characteristics of AlN Lamb wave resonators with various bottom electrode configurations by Chih-Ming Lin, Yantchev, V., Yung-Yu Chen, Felmetsger, V. V., Pisano, A. P.

“…The characteristics of aluminum nitride (AlN) Lamb wave resonators utilizing the lowest symmetric (S 0 ) mode with grounded, floating, and open bottom surface…”
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Characterization of aluminum nitride lamb wave resonators operating at 600°C for harsh environment RF applications by Ting-Ta Yen, Chih-Ming Lin, Xu Zhao, Felmetsger, Valery V, Senesky, Debbie G, Hopcroft, Matthew A, Pisano, Albert P

“…In this paper, aluminum nitride (AlN) Lamb wave resonators (LWR) operating in air from room temperature up to 600°C are demonstrated for the first time. To…”
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Acoustic characteristics of the third-order quasi-symmetric Lamb wave mode in an AlN/3C-SiC plate by Chih-Ming Lin, Yung-Yu Chen, Felmetsger, Valery V., Senesky, Debbie G., Pisano, Albert P.

“…In this study, the phase velocity and electromechanical coupling coefficient of the third-order quasi-symmetric (QS 3 ) Lamb wave mode in a composite membrane…”
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Micromechanical Resonators: AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators (Adv. Mater. 20/2012) by Lin, Chih-Ming, Chen, Yung-Yu, Felmetsger, Valery V., Senesky, Debbie G., Pisano, Albert P.

“…An AlN/3C–SiC composite is used to realize high‐frequency and high‐Q acoustic wave resonators by exploiting the third‐order quasi‐symmetric (QS3) Lamb…”
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AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectricresonant devices by Lin, Chih-Ming, Lien, Wei-Cheng, Felmetsger, Valery V., Hopcroft, Matthew A., Senesky, Debbie G., Pisano, Albert P.

“…Highly c -axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using…”
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Oxidation of sputtered AlScN films exposed to the atmosphere by Li, Minghua, Hu, Kan, Lin, Huamao, Felmetsger, Valery, Zhu, Yao

“…1µm thick highly c-axis textured Al 0.8 Sc 0.2 N films were fabricated using Pulsed DC reactive magnetron sputtering. The as-deposited films were exposed to…”
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Temperature stability of Al0.7Sc0.3N sputtered thin films by Cejas, Jose Manuel Carmona, Mirea, Teona, Nieto, Jesus, Olivares, Jimena, Felmetsger, Valery, Clement, Marta

“…Al 0.7 Sc 0.3 N films are deposited on Si substrates and SiO 2 /Mo-based acoustic mirrors in an Endeavor-MX cluster tool equipped with a dual-cathode S-gun…”
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High-temperature stable piezoelectric aluminum nitride energy harvesters utilizing elastically supported diaphragms by Yun-Ju Lai, Wei-Chang Li, Chih-Ming Lin, Felmetsger, Valery V., Pisano, Albert P.

“…High-temperature stable micromachined piezoelectric energy harvesters consisting of elastically supported aluminum nitride (AlN)/silicon carbide (SiC)…”
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Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes by Chih-Ming Lin, Yung-Yu Chen, Felmetsger, V. V., Vigevani, G., Senesky, D. G., Pisano, A. P.

“…In this study, we present a composite plate composed of an aluminum nitride thin film and an epitaxial cubic silicon carbide layer has the remarkable…”
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