Search Results - "Felix, JA"

Cardiac Myosin Activation with Omecamtiv Mecarbil in Systolic Heart Failure by Teerlink, John R, Diaz, Rafael, Felker, G. Michael, McMurray, John J.V, Metra, Marco, Solomon, Scott D, Adams, Kirkwood F, Anand, Inder, Arias-Mendoza, Alexandra, Biering-Sørensen, Tor, Böhm, Michael, Bonderman, Diana, Cleland, John G.F, Corbalan, Ramon, Crespo-Leiro, Maria G, Dahlström, Ulf, Echeverria, Luis E, Fang, James C, Filippatos, Gerasimos, Fonseca, Cândida, Goncalvesova, Eva, Goudev, Assen R, Howlett, Jonathan G, Lanfear, David E, Li, Jing, Lund, Mayanna, Macdonald, Peter, Mareev, Viacheslav, Momomura, Shin-ichi, O’Meara, Eileen, Parkhomenko, Alexander, Ponikowski, Piotr, Ramires, Felix J.A, Serpytis, Pranas, Sliwa, Karen, Spinar, Jindrich, Suter, Thomas M, Tomcsanyi, Janos, Vandekerckhove, Hans, Vinereanu, Dragos, Voors, Adriaan A, Yilmaz, Mehmet B, Zannad, Faiez, Sharpsten, Lucie, Legg, Jason C, Varin, Claire, Honarpour, Narimon, Abbasi, Siddique A, Malik, Fady I, Kurtz, Christopher E

“…Among patients with heart failure and a reduced ejection fraction, those who received the cardiac myosin activator omecamtiv mecarbil had a lower incidence of…”
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Current and Future Challenges in Radiation Effects on CMOS Electronics by Dodd, P E, Shaneyfelt, M R, Schwank, J R, Felix, J A

“…Advances in microelectronics performance and density continue to be fueled by the engine of Moore's law. Although lately this engine appears to be running out…”
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Radiation Effects in MOS Oxides by Schwank, J.R., Shaneyfelt, M.R., Fleetwood, D.M., Felix, J.A., Dodd, P.E., Paillet, P., Ferlet-Cavrois, V.

“…Electronic devices in space environments can contain numerous types of oxides and insulators. Ionizing radiation can induce significant charge buildup in these…”
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Production and propagation of single-event transients in high-speed digital logic ICs by Dodd, P.E., Shaneyfelt, M.R., Felix, J.A., Schwank, J.R.

“…The production and propagation of single-event transients in scaled metal oxide semiconductor (CMOS) digital logic circuits are examined. Scaling trends to the…”
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New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening by Ferlet-Cavrois, V., Paillet, P., McMorrow, D., Fel, N., Baggio, J., Girard, S., Duhamel, O., Melinger, J.S., Gaillardin, M., Schwank, J.R., Dodd, P.E., Shaneyfelt, M.R., Felix, J.A.

“…The generation and propagation of single event transients (SET) is measured and modeled in SOI inverter chains with different designs. SET propagation in…”
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Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits by Dodd, P.E., Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Paillet, P., Ferlet-Cavrois, V., Baggio, J., Reed, R.A., Warren, K.M., Weller, R.A., Schrimpf, R.D., Hash, G.L., Dalton, S.M., Hirose, K., Saito, H.

“…The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and…”
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Impact of Ion Energy and Species on Single Event Effects Analysis by Reed, R.A., Weller, R.A., Mendenhall, M.H., Lauenstein, J.-M., Warren, K.M., Pellish, J.A., Schrimpf, R.D., Sierawski, B.D., Massengill, L.W., Dodd, P.E., Shaneyfelt, M.R., Felix, J.A., Schwank, J.R., Haddad, N.F., Lawrence, R.K., Bowman, J.H., Conde, R.

“…Experimental evidence and Monte-Carlo simulations for several technologies show that accurate SEE response predictions depend on a detailed description of the…”
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Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation by Felix, J.A., Shaneyfelt, M.R., Schwank, J.R., Dalton, S.M., Dodd, P.E., Witcher, J.B.

“…Large, unexpected shifts in the current-voltage (IV) characteristics of commercial power MOSFETs irradiated with heavy ions have been observed. The shifts can…”
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Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers by Girard, S., Tortech, B., Regnier, E., Van Uffelen, M., Gusarov, A., Ouerdane, Y., Baggio, J., Paillet, P., Ferlet-Cavrois, V., Boukenter, A., Meunier, J.-P., Berghmans, F., Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Blackmore, E.W., Thienpont, H.

“…We characterized the responses of three erbium-doped fibers with slightly different concentrations of rare-earth ions (240-290 ppm) and Al 2 O 3 (7-10 wt.%)…”
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Structural variations on Salmonella biofilm by exposition to river water by MB, Contreras-Soto, JA, Medrano-Félix, JA, Sañudo-Barajas, R, Vélez-de la Rocha, JR, Ibarra-Rodríguez, J, Martínez-Urtaza, C, Chaidez, N, Castro-del Campo

“…Biofilm formation, as adapting strategies, is the result of stressful conditions that Salmonella faces in hostile environments like surface water. We evaluated…”
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Bias-temperature instabilities and radiation effects in MOS devices by Zhou, X.J., Fleetwood, D.M., Felix, J.A., Gusev, E.P., D'Emic, C.

“…We report the combined effects of irradiation and bias temperature stress (BTS) on MOS capacitors with HfO/sub 2/ dielectrics. Irradiation is found to enhance…”
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Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices by Fleetwood, D.M., Xiong, H.D., Lu, Z.-Y., Nicklaw, C.J., Felix, J.A., Schrimpf, R.D., Pantelides, S.T.

“…Capture cross-section data from the literature and recent density-functional theory (DFT) calculations strongly suggest that the 1/f noise of MOS devices is…”
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Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics by Shaneyfelt, M.R., Schwank, J.R., Dodd, P.E., Felix, J.A.

“…The radiation effects community has developed a number of hardness assurance test guidelines to assess and assure the radiation hardness of integrated circuits…”
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Effects of particle energy on proton-induced single-event latchup by Schwank, J.R., Shaneyfelt, M.R., Baggio, J., Dodd, P.E., Felix, J.A., Ferlet-Cavrois, V., Paillet, P., Lambert, D., Sexton, F.W., Hash, G.L., Blackmore, E.

“…The effect of proton energy on single-event latchup (SEL) in present-day SRAMs is investigated over a wide range of proton energies and temperature. SRAMs from…”
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Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics by Felix, J.A, Schwank, J.R, Fleetwood, D.M, Shaneyfelt, M.R, Gusev, E.P

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Effects of Total Dose Irradiation on Single-Event Upset Hardness by Schwank, J.R., Shaneyfelt, M.R., Felix, J.A., Dodd, P.E., Baggio, J., Ferlet-Cavrois, V., Paillet, P., Hash, G.L., Flores, R.S., Massengill, L.W., Blackmore, E.

“…The effect of total dose on SEU hardness is investigated as a function of temperature and power supply voltage to determine worst-case hardness assurance test…”
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Effects of Angle of Incidence on Proton and Neutron-Induced Single-Event Latchup by Schwank, J.R., Shaneyfelt, M.R., Baggio, J., Dodd, P.E., Felix, J.A., Ferlet-Cavrois, V., Paillet, P., Lum, G.K., Girard, S., Blackmore, E.

“…The effect of proton angle of incidence on proton-induced single-event latchup (SEL) is investigated in detail at room and elevated temperatures in present-day…”
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Total-dose radiation response of hafnium-silicate capacitors by Felix, J.A., Fleetwood, D.M., Schrimpf, R.D., Hong, J.G., Lucovsky, G., Schwank, J.R., Shaneyfelt, M.R.

“…Hafnium-silicate capacitors with 4.5-nm equivalent oxide thickness gate insulators were irradiated with 10-keV X-rays. The midgap and flatband voltage shifts…”
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Heavy Ion Energy Effects in CMOS SRAMs by Dodd, P.E., Schwank, J.R., Shaneyfelt, M.R., Ferlet-Cavrois, V., Paillet, P., Baggio, J., Hash, G.L., Felix, J.A., Hirose, K., Saito, H.

“…The impact of heavy ion energy on SEU and SEL in commercial and radiation-hardened CMOS SRAMs is explored. Provided the ion range is large enough for the ions…”
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Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing by Shaneyfelt, M.R., Felix, J.A., Dodd, P.E., Schwank, J.R., Dalton, S.M., Baggio, J., Ferlet-Cavrois, V., Paillet, P., Blackmore, E.W.

“…It is shown that protons and neutrons can induce enhanced degradation in power MOSFETs, including both trench and planar geometry devices. Specifically, large…”
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