Search Results - "Feix, F."

In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices by Chèze, C., Feix, F., Anikeeva, M., Schulz, T., Albrecht, M., Riechert, H., Brandt, O., Calarco, R.

“…We explore an alternative way to fabricate (In, Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the…”
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Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN by Feix, F., Flissikowski, T., Chèze, C., Calarco, R., Grahn, H. T., Brandt, O.

“…We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and…”
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Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C by Chèze, C., Feix, F., Lähnemann, J., Flissikowski, T., Kryśko, M., Wolny, P., Turski, H., Skierbiszewski, C., Brandt, O.

“…Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional…”
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In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices by Chèze, C., Feix, F., Anikeeva, M., Schulz, T., Albrecht, M., Riechert, H., Brandt, O., Calarco, R.

“…We explore an alternative way to fabricate (In, Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the…”
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Inkjet Printing of Lanthanide–Organic Frameworks for Anti-Counterfeiting Applications by da Luz, Leonis L, Milani, Raquel, Felix, Jorlandio F, Ribeiro, Igor R. B, Talhavini, Márcio, Neto, Brenno A. D, Chojnacki, Jaroslaw, Rodrigues, Marcelo O, Júnior, Severino A

“…Photoluminescent lanthanide–organic frameworks (Ln-MOFs) were printed onto plastic and paper foils with a conventional inkjet printer. Ln-MOF inks were used to…”
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In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices by Chèze, C, Feix, F, Anikeeva, M, Schulz, T, Albrecht, M, Riechert, H, Brandt, O, Calarco, R

“…Appl. Phys. Lett. 110 (2017) 072104 We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted…”
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Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature by Chèze, C, Feix, F, Lähnemann, J, Flissikowski, T, Brandt, O, Kryśko, M, Wolny, P, Turski, H, Skierbiszewski, C

“…Appl. Phys. Lett. 112, 022102 (2018) N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at…”
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Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency by Feix, F, Flissikowski, T, Sabelfeld, K. K, Kaganer, V. M, Wölz, M, Geelhaar, L, Grahn, H. T, Brandt, O

“…Phys. Rev. Applied 8, 014032 (2017) We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and…”
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