Search Results - "Feise, D."

Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices by Hildenstein, P., Feise, D., Ostermay, I., Paschke, K., Tränkle, G.

“…The presence of a thermally annealed metallization layer on top of a GaAs slab waveguide proofed to be of strong impact on the optical device behavior. Induced…”
Get full text

Monolithic 626 nm single-mode AlGaInP DBR diode laser by Blume, G, Nedow, O, Feise, D, Pohl, J, Paschke, K

“…Single-mode lasers below 630 nm are still realized using complex laser systems. We present distributed Bragg reflector (DBR) ridge waveguide lasers (RWL) based…”
Get full text

Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm by Bugge, F., Bege, R., Blume, G., Feise, D., Sumpf, B., Werner, N., Zeimer, U., Paschke, K., Weyers, M.

“…•Laser diodes, grown by MOVPE with emission wavelengths between 1120 nm and 1200 nm.•Lifetime behavior of laser diodes with highly strained InGaAs quantum…”
Get full text

Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm by Bege, R., Blume, G., Jedrzejczyk, D., Paschke, K., Feise, D., Hofmann, J., Bugge, F., Tränkle, G.

“…For the first time, we demonstrate diode lasers consisting of a single quantum-well, which emit at 1156 nm. Ridge waveguide lasers and tapered lasers of this…”
Get full text

Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion by Bugge, F, Paschke, K, Blume, G, Feise, D, Zeimer, U, Weyers, M

“…Laser structures for emission wavelengths of 1120 nm and 1180 nm, suitable for non-linear frequency conversion to yellow-green and yellow-orange, were…”
Get full text

High-Power DBR-Tapered Laser at 980 nm for Single-Path Second Harmonic Generation by Fiebig, C., Blume, G., Uebernickel, M., Feise, D., Kaspari, C., Paschke, K., Fricke, J., Wenzel, H., Erbert, G.

“…We present experimental results about edge-emitting distributed-Bragg-reflector-tapered diode lasers emitting at 980 nm. The investigated lasers show an output…”
Get full text

Towards an universal memory based on self-organized quantum dots by Geller, M., Marent, A., Nowozin, T., Feise, D., Pötschke, K., Akçay, N., Öncan, N., Bimberg, D.

“…A concept of a memory device based on self-organized quantum dots (QDs) is presented, which has the potential to fulfill the requirements of an universal…”
Get full text

Tapered Diode Laser With Reverse Bias Absorber Section by Fiebig, C., Feise, D., Eppich, B., Paschke, K., Erbert, G.

“…We present experimental results about gain-guided tapered diode laser having reverse bias absorber sections beside the ridge-waveguide. Due to these sections,…”
Get full text

Twin-Contact 645-nm Tapered Laser With 500-mW Output Power by Adamiec, P., Sumpf, B., Feise, D., Hasler, K.-H., Ressel, P., Wenzel, H., Zorn, M., Weyers, M., Erbert, G., Trankle, G.

“…High brightness tapered lasers emitting around 650 nm were developed. We realized 2-mm-long devices with 750-mum straight section, 1250-mum tapered section,…”
Get full text

Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion by Bugge, F., Paschke, K., Blume, G., Feise, D., Zeimer, U., Weyers, M.

“…Laser structures for emission wavelengths of 1120nm and 1180nm, suitable for non-linear frequency conversion to yellow–green and yellow–orange, were developed…”
Get full text

Reliable 2 W DBR-Tapered Diode Lasers Lasing at 1180 nm Based on Highly Strained Quantum Wells by Paschke, K., Blume, G., Ginolas, A., Feise, D., John, W., Werner, N., Bugge, F., Sumpf, B.

“…Distributed Bragg reflector tapered diode lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than…”
Get full text

Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers by Blume, G., Schiemangk, M., Pohl, J., Feise, D., Ressel, P., Sumpf, B., Wicht, A., Paschke, K.

“…Compact laser sources with long coherence lengths in the visible spectral region are sought for many applications. This letter presents…”
Get full text

1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement by Paschke, K., Blume, G., Ginolas, A., Hofmann, J., Feise, D., John, W., Werner, N., Bugge, F.

“…DBR ridge waveguide lasers at 1180nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1000h at 100mW and are…”
Get full text

10 6 years extrapolated hole storage time in Ga Sb ∕ Al As quantum dots by Marent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N.

“…A thermal activation energy of 710 meV for hole emission from In As ∕ Ga As quantum dots (QDs) across an Al 0.9 Ga 0.1 As barrier is determined by using…”
Get full text

10 6 years extrapolated hole storage time in GaSb∕AlAs quantum dots by Marent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N.

“…A thermal activation energy of 710meV for hole emission from InAs∕GaAs quantum dots (QDs) across an Al0.9Ga0.1As barrier is determined by using time-resolved…”
Get full text

Twin-Contact 645-nm Tapered Laser With 500-mW Output Power by Adamiec, P, Sumpf, B, Feise, D, Hasler, K.-H., Ressel, P, Wenzel, H, Zorn, M, Weyers, M, Erbert, G, Trankle, G

“…High brightness tapered lasers emitting around 650 nm were developed. We realized 2-mm-long devices with 750-mum straight section, 1250-mum tapered section,…”
Get full text

High-power single-frequency operation of a DBR tapered laser by Paschke, K., Fiebig, C., Feise, D., Fricke, J., Kaspari, C., Blume, G., Wenzel, H., Erbert, G.

“…A 980 nm DBR tapered laser is presented which achieves 12 W power in a single longitudinal mode and a nearly diffraction limited beam with a conversion…”
Get full text

Increasing the luminance of a red emitting laser light source by spectral beam combining by Blume, G., Feise, D., Sahm, A., Eppich, B., Paschke, K.

“…Summary form only given. Current diode laser based projections systems suffer from low output power and hence poor visibility, especially of the red laser…”
Get full text

The Spanish Version of the Functional Rating Index in Patients With Low Back Pain: Preliminary Results of the Validation Study by Medina-Porqueres, Ivan, Torres-Fernandez, Manuel, Palenque-Lobato, Francisco J, Poljakovic-Kovacev, Nina, Bellido-Da-Conceiçao, Antonio, Feise, Ronald J, Cantero-Tellez, Raquel

“…To assess the reliability, validity, and the psychometric properties of the Spanish version of the Functional Rating Index (Sp-FRI) in a preliminary cohort of…”
Get full text

Miniaturized red-emitting hybrid semiconductor MOPA modules with small-sized Faraday isolators by Blume, G., Pohl, J., Feise, D., Ressel, P., Kreutzmann, S., Ginolas, A., Sahm, A., Kurbis, C., Hofmann, J., Eppich, B., Erbert, G., Nolleke, C., Leisching, P., Paschke, K.

“…Summary form only given. Gas lasers such as the HeNe-laser at 633 nm or the Kr-laser at 647 nm are still widespread in use for applications that require…”
Get full text