Search Results - "Fedotov, A. K."
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1
Effect of Magnetic Co–CoO Particles on the Carrier Transport in Monolayer Graphene
Published in Physics of the solid state (01-02-2020)“…Electrodeposition of cobalt on monolayer graphene synthesized by chemical vapor deposition produces Co–CoO/graphene composite structures, which is accompanied…”
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2
Polycrystalline bismuth films: Correlation between grain structure and electron transport
Published in Physica Status Solidi. B: Basic Solid State Physics (01-09-2015)“…Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were…”
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3
Electrochemical deposition of Ni and Cu onto monocrystalline N-Si(100) wafers and into nanopores in Si/SiO2 template
Published in Journal of materials science (01-11-2007)“…Nickel and copper were potentiostatically deposited onto monocrystalline n-Si (100) wafers and in nanoporous SiO2/Si template from 0.5 M NiSO4 + 0.5 M H3BO3…”
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4
Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition
Published in Advances in condensed matter physics (01-01-2017)“…We investigate the transport properties of n-type noncompensated silicon below the insulator-metal transition by measuring the electrical and…”
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5
Electrical, photoelectrical, and photoelectrochemical properties of electrodeposited CdTe films subjected to high-energy irradiation
Published in Thin solid films (31-08-2011)“…The general goal of this work is to study the structure and photoelectrical properties of the electrochemically deposited thin CdTe films. The conducted…”
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Journal Article Conference Proceeding -
6
Electrochemical deposition of PbSe and CdTe nanoparticles onto p-Si(100) wafers and into nanopores in SiO2/Si(100) structure
Published in Thin solid films (01-11-2005)“…Electrochemical deposition of PbSe and CdTe nanoparticles onto p-Si(100) wafers and into nanopores in SiO2 layer grown thermally on p-Si(100) substrates…”
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7
A Two-Layer Beam under Conditions of Creep and Damage Growth with Three-Point Loading
Published in Journal of machinery manufacture and reliability (01-06-2023)“…The problem of delayed fracture and long-term strength of multilayer composites represents not only fundamental but also applied interest. The proposed…”
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8
Electrochemical deposition of nanocrystalline PbSe layers onto p-Si (100) wafers
Published in Thin solid films (01-09-2005)“…Electrochemical deposition of PbSe nanocrystals onto p-Si(100) was studied in dark and under illumination. The underpotential deposition of lead on selenium…”
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9
Influence of sputtering atmosphere on hopping conductance in granular nanocomposite (FeCoZr)x(Al2O3)1−x films
Published in Journal of alloys and compounds (15-01-2015)“…•Nanocomposites deposited in oxygen-containing atmosphere (Ar+O2).•Higher activation energies values for the hopping electronic transport.•Formation of…”
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10
Enhancement of negative capacitance effect in (CoFeZr)x(CaF2)(100−x) nanocomposite films deposited by ion beam sputtering in argon and oxygen atmosphere
Published in Journal of alloys and compounds (15-01-2015)“…•(FeCoZr)x(CaF2)(100−x) nanomaterals deposited in oxygen-containing atmosphere (Ar+O2).•FeCoZr “cores” covered with FeCo-oxide “shells” embedded into nonoxygen…”
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11
Set of equations for transient enhanced diffusion in shallow ion-implanted layers
Published in Computational materials science (01-08-2008)“…To simulate the transient enhanced diffusion near the surface or interface, a set of equations describing the impurity diffusion and quasichemical reactions of…”
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12
Negative differential resistance in n-type noncompensated silicon at low temperature
Published in Applied physics letters (28-11-2016)“…We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25 K and at…”
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13
Structure, electric and thermoelectric properties of binary ZnO-based ceramics doped with Fe and Co
Published in Journal of alloys and compounds (25-02-2022)“…We have studied the interconnection between structure (grain sizes, chemical and phase composition, porosity) and some electric properties (resistivity, Hall…”
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14
Set of equations for stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals
Published in Journal of alloys and compounds (17-11-2004)“…A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled…”
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15
Simulation of carbon containing complexes at silicon–silicon grain boundaries in cluster approximation
Published in Thin solid films (01-09-2005)“…The transformation of the “core” for the tilt Σ5 θ=37° [001]/(130) grain boundary (GB) in polycrystalline silicon due to incorporation of carbon atoms is…”
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16
Electron transport through composite SiO2(Si)&FexOy(Fe) thin films containing Si and Fe nanoclusters
Published in Journal of alloys and compounds (15-05-2022)“…•Granular structure of SiO2(Si)&FexOy(Fe) with of SiO2 and FexOy matrices.•Mott’s or Efros-Shklovsky mechanisms of electron transport at low electric…”
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17
AC/DC conductance in granular nanocomposite films (Fe45Co45Zr10)x(CaF2)100−x
Published in Journal of alloys and compounds (15-02-2014)“…► Nanocomposites deposited in oxygen-containing atmosphere (Ar+O2). ► ‘Lowering of FeCoZr nanoparticles’ dimensions (down to 〈D〉∼3–5nm) in nanocomposites. ►…”
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18
AC electrical resonances in nanocomposites with partly oxidized FeCoZr grains embedded in CaF2 ceramic matrix – effects of annealing
Published in Journal of alloys and compounds (05-04-2020)“…This paper presents the frequency and temperature dependences of the phase shift angle, the active part of the admittance, the capacitance, and the dielectric…”
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19
Electron transport and thermoelectric properties of ZnO ceramics doped with Fe
Published in Journal of alloys and compounds (15-02-2021)“…Currently, special attention is paid to the search for new ceramic materials based on wide-gap oxides, as well as to the study of their structure and…”
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20
Delocalization of electron states in n-Si at low temperatures
Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (16-05-2020)“…We report on the electric transport properties of Si heavily doped with Sb in the temperature range of 1.9 - 3.0 K and at current density of J < 0.2 A/cm2…”
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