Search Results - "Fedison, J. B."

Stacking-fault formation and propagation in 4H-SiC PiN diodes by Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

“…Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm super(2) and 160 A/cm super(2). Dark areas in…”
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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes by Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

“…Using site-specific plan-view transmission electron microscopy (TEM) and light emission imaging, we have identified stacking faults formed during forward…”
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Coss related energy loss in power MOSFETs used in zero-voltage-switched applications by Fedison, J. B., Fornage, M., Harrison, M. J., Zimmanck, D. R.

“…This paper presents a general method to measure the output capacitance (C oss ) related energy loss per switching cycle in power MOSFETs used in…”
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Electrical characteristics of magnesium-doped gallium nitride junction diodes by Fedison, J. B., Chow, T. P., Lu, H., Bhat, I. B.

“…Electrical characteristics of lateral p+n diodes made from gallium nitride epitaxial layers on sapphire substrates are reported. The current–voltage…”
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Stacking-fault formation and propagation in 4H-SiC PiN diodes by Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

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Partial dislocations and stacking faults in 4H-SiC PiN diodes by TWIGG, M. E, STAHLBUSH, R. E, FATEMI, M, ARTHUR, S. D, FEDISON, J. B, TUCKER, J. B, WANG, S

“…Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected to both light and heavy…”
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COSS hysteresis in advanced superjunction MOSFETs by Fedison, J. B., Harrison, M. J.

“…In this work, a Sawyer-Tower circuit is employed to characterize the output capacitance (COSS) of advanced superjunction MOSFETs. It is shown that some of the…”
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An implanted-emitter 4H-SiC bipolar transistor with high current gain by Tang, Y., Fedison, J.B., Chow, T.P.

“…An epi-base, implanted-emitter, npn bipolar transistor which showed a maximum common emitter current gain (/spl beta/) of /spl sim/40, the highest current gain…”
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Silicon carbide photodiode sensor for combustion control by Brown, D.M., Fedison, J.B., Hibshman, J.R., Kretchmer, J.W., Lombardo, L., Matocha, K.S., Sandvik, P.M.

“…A dual silicon carbide photodiode chip was developed to determine the temperature of a natural gas combustion flame. The concept uses the change in shape of…”
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Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers by Fedison, J.B., Ramungul, N., Chow, T.P., Ghezzo, M., Kretchmer, J.W.

“…4500 V 4H-SiC p-i-n junction rectifiers with low on-state voltage drop (3.3-4.2 V), low reverse leakage current (3/spl times/10/sup -6/ A/cm/sup 2/), and fast…”
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High-voltage implanted-emitter 4H-SiC BJTs by Yi Tang, Fedison, J.B., Chow, T.P.

“…Implanted-emitter, epi-base, npn 4H-SiC bipolar junction transistors (BJTs) which show maximum blocking voltage of 500 V and common-emitter current gain (/spl…”
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Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission by Brown, D.M., Sandvik, P.M., Fedison, J.B., Hibshman, J., Matocha, K.S.

“…Measurements of the ultraviolet emission spectrum emitted from a lean burn premixed natural gas flame were taken over a range of flame temperatures using a…”
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Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82 , 2410 (2003)] by Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. E., Wang, S.

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Stacking-fault formation and propagation in 4H-SiC PiN diodes : III-V Nitrides and Silicon Carbide by STAHLBUSH, R. E, FATEMI, M, FEDISON, J. B, ARTHUR, S. D, ROWLAND, L. B, WANG, S

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Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors by Fedison, J.B., Chow, T.P., Ghezzo, M., Kretchmer, J.W.

“…In this paper, we report static and switching characteristics of 1 kV and 3 kV 4H-SiC GTO thyristors with various anode-gate geometries. Measured switching…”
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High temperature characterization of implanted-emitter 4H-SiC BJT by Yi Tang, Fedison, J.B., Chow, T.P.

“…We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain…”
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